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  • GaAs PIN epi wafer

    2017-09-16

    InGaAs/InP epi wafer for PIN We can offer 2" InGaAs/InP epi wafer for PIN as follows: InP Substrate: InP Orientation: (100) Doped with Fe, Semi-Insulating wafer Size: 2" diameter Resistivity:>1x10^7)ohm.cm EPD:<1x10^4 /cm^2 Single side polished. EPI layer : InxGa1-xAs Nc>2x10^18 /cc (using Si as dopant), Thickness :0.5 um (+/- 20%) Roughness of epi-layer, Ra<0.5nm Source: semiconductorwafers.net For more information, please visit our website:http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.

  • 780nm laser wafers

    2017-09-05

    Xiamen Powerway(PAM-XIAMEN), a leading developer and manufacturer of compound semiconductor epitaxial wafers providing 780nm AlGaInP/GaAs laser structure wafers. Layer Material X Y Strain tolerance PL Thickness Type Level         (ppm) (nm) (um)   (cm-3) 8 GaAs         0.1 P >2.00E19 7 GaIn(x)P 0.49   +/-500   0.05 P   6 [Al(x)Ga]In(y)P 0.3 0.49 +/-500   1 P   5 GaIn(x)P 0.49   +/-500   0.5 U/D   4 GaAs(x)P 0.77     770   U/D   3 GaIn(x)P 0.49   +/-500   0.5 U/D   2 [Al(x)Ga]In(y)P 0.3 0.49 +/-500   1 N   1 GaAs         0.5 N   0 GaAs substrate           N   Source: semiconductorwafers.net For more information, please visit our website:http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.

  • Diamond wafers

    2017-09-03

    Thermal Grade Diamand Wafers and Slices Diamond exhibits the highest thermal conductivity among all materials. Its thermal conductivity is up to 2000 W/mK which is higher a lot than that of copper. Therefore diamond wafers and slices become more and more popular in thermal management as heatspreaders,heatsinks, lithographically patterned metallization, electrical isolation between top and bottom metallization, stress relieving slits for stress free mounting etc. CVD diamond heat spreaders in various shapes,and the typical parameters are as follows: Material                                    thermal conductivity >1000 W/mK Diameter                                 Up to 70mm Surface                                     Polished, lapping, as-cut Thickness                               100 - 1500 µm Young's modulus                  1000-1100Gpa Density                                    3.5g/cm3 Optical                                     grade diamond wafers Optical grade diamond wafers are used as window for infrared beam splitters, lenses for terahertz spectroscopy and CO2 laser surgery,Brewster Windows for multi-spectral applications such as free electron lasers, multi-wavelength IR lasers or terahertz optical systems,for Units attenuated total reflection) spectroscopy,for diamond Liquid Cells. Large Sized Diamond Substrate Long known as one of the top industrial jewel parts suppliers, we have been continuing to improve its jewel substrate manufacture technology when it mass produced 14mm*14mm single crystal diamond substrates for post-Si semiconductors that build optical parts, heat spreader, audio parts and quantum computer. At present,  we are able to manufacture substrates in the size of around 1 inch square with the exclusive, patented microneedle growth technology enabling stable production of crack-free large diamond substrate. Carrying on with the technology, we promised to scale up the size of its substrate products to up to 50mm*50mm (2 inch square). Keywords: Diamond wafers,Diamond wafer Source: semiconductorwafers.net For more information, please visit our website:http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.

  • InAs (Indium Arsenide )wafer

    2017-09-01

    PAM-XIAMEN provides InAs wafer ( Indium Arsenide ) to optoelectronics industry in diameter up to 2 inch . InAs crystal is a compound  formed by 6N pure In and As element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 15000 cm -3 . InAs crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or MOCVD epitaxial growth . We have "epi ready " InAs products with wide  choice in exact or off orientation , low or high doped concentration and surface finish . Please contact us for more product information . 1)2”InAs Type/Dopant:N/S Orientation:[111B]±0.5° Thickness:500±25um Epi-Ready SSP 2)2”InAs Type/Dopant:N/Undoped Orientation : (111)B Thickness:500um±25um SSP 3)2”InAs Type/Dopant:N Un-doped Orientation :A ±0.5° Thickness:500um±25um epi-ready Ra<=0.5nm Carrier Concentration(cm-3):1E16~3E16 Mobility(cm -2 ):>20000 EPD(cm -2 ):<15000 SSP 4)2”InAs Type/Dopant:N/Undoped Orientation :with [001]O.F. Thickness:2mm AS cut 5)2”InAs Type/Dopant:N/P Orientation :(100), Carrier Concentration(cm-3):(5-10)E17, Thickness:500 um SSP All wafers are offered with high quality epitaxy ready finishing. Surfaces are characterised by in-house, advanced optical metrology techniques which include Surfscan haze and particle monitoring, spectroscopic ellipsometry and grazing incidence interferometry The influence of annealing temperature on the optical properties of surface electron accumulation layers in n-type (1 0 0) InAs wafers has been investigated by Raman spectroscopy. It exhibits that Raman peaks due to scattering by unscreened LO phonons disappear with increasing temperature, which indicates that the electron accumulation layer in InAs surface is eliminated by annealing. The involved mechanism was analyzed by X-ray photoelectron spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The results show that amorphous In2O3 and As2O3 phases are formed at InAs surface during annealing and, meanwhile, a thin crystalline As layer at the interface between the oxidized layer and the wafer is also generated which leads to a decrease in thickness of the surface electron accumulation layer since As adatoms introduce acceptor type surface states. Relative products: InAs wafer InSb wafer InP wafer GaAs wafer GaSb wafer GaP wafer Source: semiconductorwafers.net For more information, please visit our website:http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.

  • Indium Antimonide (InSb) Single Substrates

    2017-08-25

    Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers  InSb crystal wafer up to 3" in diameter that are grown by a modified Czochralski method from highly purified, zone refined polycrystalline ingots. 1)2"InSb Orientation:(100) Type/Dopant:N/undoped Diameter:50.8mm Thickness:300±25µm;500um Nc:<2E14a/cm3 Polish:SSP 2)2"InSb Orientation:(100) Type/Dopant:N/Te Diameter:50.8mm Carrier Concentration: 0.8 – 2.1 x 1015 cm-3 Thickness:450+/- 25 um;525±25µm EPD < 200 cm-2 Polish:SSP 3)2"InSb Orientation:(111) + 0.5° Thickness:450+/- 50 um Type/Dopant:N/undoped Carrier Concentration:  < 5 x 10^14 cm-3 EPD < 5 x 103 cm-2 Surface roughness: < 15 A Bow/Warp: < 30 um Polish:SSP 4)2"InSb Orientation:(111) + 0.5° Type/Dopant:P/Ge Polish:SSP 5)2"InSb Thickness:525±25µm, Orientation:[111A]±0.5° Type/Dopant:N/Te Ro=(0.020-0.028)Ohmcm, Nc=(4-8)E14cm-3/cc, u=(4.05E5-4.33E5)cm²/Vs, EPD<100/cm², Mobility:4E5cm2/Vs One side edge; In(A) Face: Chemically-mechanically final polished to 0.1µm (Final Polish), Sb(B) Face: Chemically-mechanically final polished to <5µm (Lasermark), NOTE: Nc and Mobility are at 77ºK. Polish:SSP;DSP 6)2" GaSb Thickness:525±25µm, Orientation:[111B]±0.5°, Type/Dopant:P/undoped;N/undoped Polish:SSP;DSP Surface Condition and other Specification Indium Antimonide (InSb) wafer can be offered as wafers with as-cut, etched or polished finishes with wide range of doping concentration and thickness. The wafer could be high quality epi-ready finishing. Orientation Specification Wafer surface orientations are supplied to an accuracy of +/- 0.5 degrees using a triple axis X-Ray diffractometer system. Substrates can also be supplied with very precise misorientations in any direction from the growth plane. The available orientaiton could be (100),(111), (110) or other orientation or mis degree. Packaging condition Polished wafer:individually sealed in two outer bags in inert atmosphere. Cassette shipments are available if required). As-cut Wafer:Cassette shipment. (Glassine bag available on request). Words Wiki Indium antimonide (InSb) wafer is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductormaterial from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidancesystems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiationsource as it is a strong photo-Dember emitter. Relative products: InAs wafer InSb wafer InP wafer GaAs wafer GaSb wafer GaP wafer Source: semiconductorwafers.net For more information, please visit our website:http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.

  • InP Epitaxial Wafers

    2017-08-22

    Indium Phosphide (InP) is a key semiconductor material that enables optical systems to deliver the performance required for data center, mobile backhaul, metro and long-haul applications. Lasers, photodiodes and waveguides fabricated on InP operate at the optimum transmission window of glass fiber, which enable efficient fiber communications. PAM-XIAMEN’s proprietary Etched Facet Technology (EFT) allows wafer level testing similar to traditional semiconductor manufacturing. EFT enables high yield, high performance and reliable lasers. 1)2"InP wafer Orientation:±0.5° Type/Dopant:N/S;N/Un-doped Thickness:350±25mm Mobility:>1700 Carrier Concentration:(2~10)E17 EPD:<50000cm^-2 Polished:SSP 2)1",2"InP wafer Orientation:±0.5° Type/Dopant:N/Un-doped Thickness:350±25mm Mobility:>1700 Carrier Concentration:(2~10)E17 EPD:<50000cm^-2 Polished:SSP 3)1",2"InP wafer Orientation:A±0.5° Type/Dopant:N/S;N/Un-doped Thickness:350±25mm Polished:SSP 4)2"InP wafer Orientation:B±0.5° Type/Dopant:N/Te;N/Undoped Thickness:400±25mm;500±25mm Polished:SSP 5)2"InP wafer Orientation:(110)±0.5° Type/Dopant:P/Zn;N/S Thickness:400±25mm Polished:SSP/DSP 6)2"InP wafer Orientation:(211)B;(311)B Type/Dopant:N/Te Thickness:400±25mm Polished:SSP/DSP 7)2"InP wafer Orientation:(100)2°off+/-0.1 degree t.n. (110) Type/Dopant:SI/Fe Thickness:500±20mm Polished:SSP 8)2" size InGaAs/InP epitaxial wafer,and we accept custom specs. Substrate: (100) InP substrate Epi Layer 1: In0.53Ga0.47As layer , undoped , thickness 200 nm Epi Layer 2: In0.52Al0.48As layer , undoped , thickness 500 nm Epi Layer 3:In0.53Ga0.47As layer , undoped , thickness 1000 nm Top Layer :In0.52Al0.48As layer , undoped , thickness 50 nm Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers the highest purity InGaAs/InP Epitaxial Wafers in the industry today. Sophisticated manufacturing processes have been put in place to customize and produce high quality Indium Phosphide Epitaxial wafers up to 4 inches with wavelengths from 1.7 to 2.6μm, ideally suited for high speed, long wavelength imaging, high speed HBT and HEMTs, APDs and analog-digital converter circuits. Applications using InP-based components can greatly exceed transmission rates in comparison to similar components structured on GaAs or SiGe based platforms. Relative products: InAs wafer InSb wafer InP wafer GaAs wafer GaSb wafer GaP wafer Source: semiconductorwafers.net For more information, please visit our website:http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.

  • Epitaxial Wafer

    2017-08-17

    Products Thanks to MOCVD and MBE technology,PAM-XIAMEN, a epitaxial wafer supplier, offers epitaxial wafer products, including GaN epitaxial wafer, GaAs epitaxial wafer, SiC epitaxial wafer, InP epitaxial wafer, and now we give a brief introduction as follows: 1)GaN epitaxial growth on sapphire template; Conduction Type: Si doped (N+) Thickness:4um,20um,30um,50um,100um Orientation: c-axis (0001) ± 1.0° Resistivity: <0.05 Ohm.cm Dislocation Density:<1x108cm-2 Substrate Structure: GaN on Sapphire(0001) Front Surface Finish (Ga-face): As-grown Back Surface Finish: SSP or DSP Usable Area: ≥ 90 % Available Sizes: 2” (50.8 mm), 3” (76.2 mm) and 4” (100 mm) Available Grades: Production, Research and Rider 2)AlN epitaxial growth on sapphire template; Conduction Type: semi-insulating Thickness:50-1000nm+/- 10% Orientation: C-axis(0001)+/-1O Orientation Flat:A-plane XRD FWHM of (0002):<200 arcsec Substrate Structure: AlN on sapphire Back Surface Finish: SSP or DSP,epi-ready Usable Area: ≥ 90 % Available Sizes: 2” (50.8 mm), Available Grades: Production, Research and Rider 3)AlGaN epitaxial growth on sapphire, including HEMT structure; Conduction Type: semi-insulating Thickness:50-1000nm+/- 10% Orientation: C-axis(0001)+/-1O Orientation Flat:A-plane XRD FWHM of (0002):<200 arcsec Substrate Structure: AlGaN on sapphire Back Surface Finish: SSP or DSP,epi-ready Usable Area: ≥ 90 % Available Sizes: 2” (50.8 mm), Available Grades: Production, Research and Rider 4)LT-GaAs epi layer on GaAs substrate Diamater(mm):Ф 50.8mm ± 1mm Thickness:1-2um or 2-3um Marco Defect Density:≤ 5 cm-2 Resistivity(300K):>108 Ohm-cm Carrier:<0.5ps Dislocation Density:<1x106cm-2 Useable Surface Area:≥80% Polishing:Single side polished Substrate:GaAs substrate 5)GaAs Schottky Diode Epitaxial Wafers Epitaxial Structure No. Material Composition Thickness Target(um) Thickness Tol. 1 ±10% >5.0E18 N/A Si N++ 3 GaAs  Ga1-xAlxAs x=0.50 1 ±10% -- N/A -- -- 1 GaAs  

  • 808nm laser wafers

    2017-08-10

    Xiamen Powerway(PAM-XIAMEN), a leading developer and manufacturer of compound semiconductor epitaxial wafers providing 808nm AlGaInP/GaAs laser structure wafers. Layer Material X Y Strain tolerance PL Thickness Type Level         (ppm) (nm) (um)   (cm-3) 8 GaAs         0.1 P >2.00E19 7 GaIn(x)P 0.49   +/-500   0.05 P   6 [Al(x)Ga]In(y)P 0.3 0.49 +/-500r   1 P   5 GaIn(x)P 0.49   +/-500   0.5 U/D   4 GaAs(x)P 0.86   +/-500 798 0.013 U/D   3 GaIn(x)P 0.49   +/-500   0.5 U/D   2 [Al(x)Ga]In(y)P 0.3 0.49 +/-500   1 N   1 GaAs         0.5 N   0 GaAs substrate           N   Source: PAM-XIAMEN For more information, please visit our website: www.semiconductorwafers.net, send us email at luna@powerwaywafer.com or powerwaymaterial@gmail.com.

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