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GaSb wafer

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GaSb wafer GaSb wafer

GaSb wafer

Xiamen Powerway offers GaSb wafer - gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100)

  • Product Details

Xiamen Powerway offers GaSb wafer - gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).


Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.It has a lattice constant of about 0.61 nm. GaSb can be used for Infrared detectors,infrared LEDs and lasers and transistors, and thermophotovoltaic systems.


Wafer Specification
Item Specifications
Wafer Diameter 2"50.5±0.5mm
3"76.2±0.4mm
4"1000.0±0.5mm
Crystal Orientation (100)±0.1°
Thickness 2"500±25um
3" 625±25um
4"1000±25um
Primary flat length 2"16±2mm
3"22±2mm
4"32.5±2.5mm
Secondary flat length 2"8±1mm
3"11±1mm
4"18±1mm
Surface Finish P/E, P/P
Package Epi-Ready,Single wafer container or CF cassette 


Electrical and Doping Specification
Conduction Type p-type p-type n-type n-type n-type
Dopant Undoped Zinc Tellurium Low tellurium High tellurium
E.D.P cm-2 2"2000
3"
5000 
2"2000
3"
5000 
2",3"1000
4"
2000 
2"1000
3",4"
2000 
2,"3",4"500
Mobility cm² V-1s-1 ≥500 450-200 3500-2000 3500-2000 3500-2000
Carrier Concentration cm-3 2*1017 1*1018 91-900*1017 2*1017 5*1017




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