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InAs wafer

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InAs wafer InAs wafer

InAs wafer

Xiamen Powerway offers InAs wafer - Indium arsenide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

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Xiamen Powerway offers InAs wafer - Indium arsenide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).


Indium arsenide, InAs, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C.[2]Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.


Indium arsenide is similar to gallium arsenide and is a direct bandgap material. Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitridewith gallium nitride to yield indium gallium nitride.


Wafer Specification
Item Specifications
Wafer Diameter 2"50.5±0.5mm
3"76.2±0.4mm
Crystal Orientation (100)±0.1°
Thickness 2"500±25um
3" 625±25um
Primary flat length 2"16±2mm
3"22±2mm
Secondary flat length 2"8±1mm
3"11±1mm
Surface Finish P/E, P/P
Package Epi-Ready,Single wafer container or CF cassette 


Electrical and Doping Specification
Conduction Type n-type n-type n-type p-type p-type
Dopant Undoped Low Sulphur High Sulphur Low Zinc High Zinc
E.D.P cm-2 2"15,000
3"
50,000
Mobility cm² V-1s-1 23000 25000-15000 12000-7000 350-200 250-100
Carrier Concentration cm-3 1-3*1016 4-8*1016 1-3*1018 1-3*1017 1-3*1018


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Subject : InAs wafer

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