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Test Wafer Monitor Wafer Dummy Wafer

Test Wafer Monitor Wafer Dummy Wafer

PAM-XIAMEN Offers  Dummy Wafer / Test Wafer / Monitor Wafer

  • Product Details

Test Wafer Monitor Wafer Dummy Wafer


PAM-XIAMEN Offers  Dummy Wafer / Test Wafer / Monitor Wafer

Dummy wafers (also called as test wafers) are wafers mainly used for experiment and test and being different

from general wafers for product. Accordingly, reclaimed wafers are mostly applied as dummy wafers (test wafers).

Dummy wafers are often used in a production device to improve safety in the beginning of production process and

are used for delivery check and evaluation of process form. As dummy wafers are often used for experiment and test,

size and thickness thereof are important factors in most occasions.

In each process, film thickness, pressure resistance, reflection index and presence of pinball are measured using

dummy wafers (test wafers). Also, dummy wafers (test wafers) are used for measurement of pattern size, check

of defect and so on in lithography.

Monitor wafers are the wafers to be used in the case that an adjustment is required in each production step

prior to the actual IC production. For example, when the conditions of each process are set, such as the case of

measuring tolerance of device against ( the variation of ) substrate thickness, monitor wafers are being used as

a substitution of high-standard and high value wafers. Moreover, they are also used for the monitoring purpose in

the process together with product wafers. Monitor wafers are necessary wafer materials as important as product

prime wafers. They are also called as test wafers together with dummy wafers.

For more product detail or if you have required specification, please contact us at luna@powerwaywafer.com or powerwaymaterial@gmail.com.


Test Wafer

Single Side Polished Test Wafer N Type (200Nos)

Sl No

 Item

 SCL SPECIFICATIONS

1

Growing method

CZ

2

Wafer Diameter

150 ± 0.5mm

3

Wafer Thickness

675±25 µm

4

Wafer Surface Orientation

<100>±2°

5

Dopant

Phosphorus

6

Dislocation Density

Less than 5000/cm2

8

Resistivity

4-7Ωcm

9

Radial Resistivity Variation (max.)

15%

10

Flatness

10a

·         BOW (max.)

60 µm

10b

·         TIR (max.)

6 µm

10c

·         TAPER (max.)

12 µm

10d

·         WARP (max.)

60 µm

11

 Primary Flat

11a

·         Length

57.5±2.5 mm

11b

·         Orientation

{110}±2° as per SEMI Standard

11c

 Secondary Flat

As per SEMI Standard

12

Front Surface Finish

Mirror Polished

13

Max. particles of size ≥0.3µm

30

14

·         Scratches, Haze, Edge Chips, Orange Peel & Other defects

Nil

15

Back Surface

Damage free Etched

16

Packing Requirement

Should be vacuum sealed in Class ’10’environment in double layer packing.Wafers should be shipped in Fluorware ORION TWO wafer shippers or equivalent make made from ultra clean polypropylene


Double Side Polished Test Wafer N Type (150 Nos)

Sl No

Item

SCL SPECIFICATIONS

1

Growing method

CZ

2

Wafer Diameter

150 ± 0.5mm

3

Wafer Thickness

675±25µm

4

Wafer Surface Orientation

<100>±2°

5

Dopant

Phosphorus

6

Dislocation Density

Less than 5000/cm2

8

Resistivity

4-7Ωcm

9

Radial Resistivity Variation (max.)

15%

10

Flatness

10a

·         BOW (max.)

60 µm

10b

·         TIR (max.)

6 µm

10c

·         TAPER (max.)

12 µm

10d

·         WARP (max.)

60 µm

11

Primary Flat

11a

·         Length

57.5±2.5 mm

11b

·         Orientation

{110}±2° as per SEMI Standard

11c

Secondary Flat

As per SEMI Standard

12

Front Surface Finish

Mirror Polished

13

Max. particles of size ≥0.3µm

30

14

·         Scratches, Haze, Edge Chips,

Nil

Orange Peel & Other defects

15

Back Surface

Mirror Polished

16

Packing Requirement

Should be vacuum sealed in Class ’10’
environment in double layer packing.
Wafers should be shipped in Fluorware
ORION TWO wafer shippers or equivalent
make made from ultra clean polypropylene


Monitor Wafer / Dummy Wafer

Monitor / Dummy Silicon wafer

Wafer Diameter

Polished

Wafer Surface

Wafer Thickness

Resistivity

Particle

Orientation

4″

1 side

100/111

250-500μm

0-100

0.2μm≤qty30

6″

1 side

100

500-675μm

0-100

0.2μm≤qty30

8″

1 side

100

600-750μm

0-100

0.2μm≤qty30

12″

2 side

100

650-775μm

0-100

0.09μm≤qty100


REGENERATED 200mm WAFERS

Item#

PARAMETER

Units

Value

Notes

1

Growth Method

CZ

2

Orientation

1-0-0

3

Resistivity

Ωм.см

1-50

4

Type / dopant

р,n/

Boron, Phosphorus

5

Thickness

мкм

1гр. – 620,

2гр. – 650

3гр. – 680

4гр. – 700

5гр. – 720

6

GBIR (TTV

мкм

1-3гр. <30,

4-5гр. <20

7

GLFR (TIR

мкм

<10

8

Warp

мкм

<60

9

Bow

мкм

<40

10

Metal contamination

1/см2

<3E10

11

Front surface

Polished

12

Front surface visual:

Haze, Scratches, Stains, Spots

none

Orange Peel

none

Cracks, Craters

none

13

Front Side LPD:

Number of wafers with stated parameter value should be not less than 80% of batch,

< 0,12мкм

<100

<0,16мкм

<50

<0,20мкм

<20

<0,30мкм

<10


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