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GaN HEMT epitaxial wafer

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GaN HEMT epitaxial wafer

GaN HEMT epitaxial wafer

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.

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2" GaN HEMT Epitaxial Wafers


We offer 2" GaN HEMT Wafers, the structure is as follows:


Structure(from top to bottom):

*undoped GaN cap(2~3nm)

AlxGa1-xN (18~40nm)

AlN(buffer layer)

un-doped GaN(2~3um)

Sapphire substrate


* We can use Si3N to replace GaN on the top, the adhesion is strong, it is coated by sputter or PECVD.


AlGaN/GaN HEMT Epi Wafer on sapphire/GaN


Layer ID

Layer Name

Material

Al Content(%)

Dopant

Thickness(nm)

0

Substrate

GaN or Sapphire

1

Nucleation Layer

Various,AlN

100

DID

2

Buffer Layer

GaN

0

NID

1800

3

Spacer

AlN

100

NID

1

4

Schottky Barrier

AlGaN

20 or 23 or 26

NID

21


2",4" AlGaN/GaN HEMT Epi Wafer on Si


1.1Specifications for Aluminium Gallium Nitride (AlGaN) / Gallium Nitride (GaN)   High Electron Mobility Transistor (HEMT)  on Silicon substrate.

Requirements

Specification

AlGaN/GaN HEMT Epi Wafer on Si

AlGaN/GaN HEMT structure

Refer 1.2

Substrate Material

Silicon

Orientation

<111>

Growth method

Float Zone

Conduction Type

P or N

Size (inch)

2”,4”

Thickness(μm)

625

Backside

Rough

Resistivity(Ω-cm)

>6000

Bow(μm)

±35


1.2.Epistructure: Crack-free Epilayers

Layer #

Composition

Thickness

X

Dopant

Carrier Concentration

5

GaN

2nm

-

-

-

4

AlxGa1–xN

8nm

0.26

-

-

3

AlN

1nm

Un-doped

2

GaN

≥1000 nm

Un-doped

1

Buffer/Transition Layer

-

-

Substrate

Silicon

350µm625µm

-


1.3.Electrical Properties of the AlGaN/GaN HEMT structure


2DEG Mobility (at 300 K)                      :≥1,800 cm2/V.s

2DEG Sheet Carrier Density (at 300 K)  :≥0.9x1013 cm-2

RMS Roughness (AFM)                        : ≤ 0.5 nm (5.0 µm × 5.0 µm scan Area)


2"AlGaN/GaN on sapphire


For specification of AlGaN/GaN on sapphire template, please contact our sales department: sales@powerwaywafer.com.


Application: Used in blue laser diodes, ultraviolet LEDs (down to 250 nm), and AlGaN/GaN HEMTs device.


Explanation of AlGaN/Al/GaN HEMTs:


Nitride HEMTs are being intensively developed for high-power electronics in high-frequency amplification and power switching applications. Often high performance in DC operation is lost when the HEMT is switched – for example, the on-current collapses when the gate signal is pulsed. It is thought that such effects are related to charge trapping that masks the effect of the gate on current flow. Field-plates on the source and gate electrodes have been used to manipulate the electric field in the device, mitigating such current-collapse phenomena.


GaN EpitaxialTechnology—-Customized GaN epitaxy on SiC,Si and Sapphire substrate for HEMTs, LEDs:


Related Classification:


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Remark:
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!

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If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.
   
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If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.