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InSb wafer

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InSb wafer InSb wafer

InSb wafer

Xiamen Powerway offers InSb wafer - Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

  • Product Details

Xiamen Powerway offers InSb wafer - Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).


Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras,FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiation source as it is a strong photo-Dember emitter.


Wafer Specification
Item Specifications
Wafer Diameter 2"50.5±0.5mm
3"76.2±0.4mm
4"1000.0±0.5mm
Crystal Orientation 2"(111)AorB±0.1°
3"(111)AorB±0.1°
4"(111)AorB±0.1°
Thickness 2"625±25um
3" 800or900±25um
4"1000±25um
Primary flat length 2"16±2mm
3"22±2mm
4"32.5±2.5mm
Secondary flat length 2"8±1mm
3"11±1mm
4"18±1mm
Surface Finish P/E, P/P
Package Epi-Ready,Single wafer container or CF cassette 


Electrical and Doping Specification
Conduction Type n-type n-type n-type n-type p-type
Dopant Undoped Tellurium Low tellurium High tellurium Genmanium
E.D.P cm-2 2"3"4"50 2"100
Mobility cm² V-1s-1 4*105 2.5*104 2.5*105 Not Specified 8000-4000
Carrier Concentration cm-3 5*1013-3*1014 1-7*1017 4*1014-2*1015 1*1018 5*1014-3*1015

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