Home / Products / Compound Semiconductor /

InSb wafer

Products
InSb wafer InSb wafer

InSb wafer

Xiamen Powerway offers InSb wafer - Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

  • Product Details

Xiamen Powerway offers InSb wafer - Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).


Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras,FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiation source as it is a strong photo-Dember emitter.


Wafer Specification
Item Specifications
Wafer Diameter 2"50.5±0.5mm
3"76.2±0.4mm
4"1000.0±0.5mm
Crystal Orientation 2"(111)AorB±0.1°
3"(111)AorB±0.1°
4"(111)AorB±0.1°
Thickness 2"625±25um
3" 800or900±25um
4"1000±25um
Primary flat length 2"16±2mm
3"22±2mm
4"32.5±2.5mm
Secondary flat length 2"8±1mm
3"11±1mm
4"18±1mm
Surface Finish P/E, P/P
Package Epi-Ready,Single wafer container or CF cassette 


Electrical and Doping Specification
Conduction Type n-type n-type n-type n-type p-type
Dopant Undoped Tellurium Low tellurium High tellurium Genmanium
E.D.P cm-2 2"3"4"50 2"100
Mobility cm² V-1s-1 4*105 2.5*104 2.5*105 Not Specified 8000-4000
Carrier Concentration cm-3 5*1013-3*1014 1-7*1017 4*1014-2*1015 1*1018 5*1014-3*1015

Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.
Subject : InSb wafer

Related Products

InP substrate

InP wafer

Xiamen Powerway offers InP wafer - Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

InAs substrate

InAs wafer

Xiamen Powerway offers InAs wafer - Indium arsenide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

GaP substrate

GaP wafer

Xiamen Powerway offers GaP wafer - gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

GaSb substrate

GaSb wafer

Xiamen Powerway offers GaSb wafer - gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100)

sic wafer

SIC Application

Due to SiC physical and electronic properties,Silicon Carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device.

Silicon Wafer

Polished wafer

FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)

Silicon Wafer

Cz mono-crystalline silicon

CZ-Silicon The heavily/lightly-doped CZ mono-crystalline silicon is suitable for producing various integrated circuits (IC), diodes, triodes, green-energy solar panel. The special elements (such as Ga, Ge) can be added to produce the high-efficiency, radiation-resistant and anti-degenerating solar cell materials for special components.

gan on silicon

Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.