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  • Ge Single Crystals and Wafer Specification

    PWAM offers semiconductor materials,Ge(Germanium) Single Crystals and Wafers grown by VGF / LEC Please download PDF from below: http://www.powerwaywafer.com/data/article/1332786948911911201.pdf Application: Used for diodes and transistors,IR optical window or disks,opitical components and solar cell.

  • Diamond wafers

    Thermal Grade Diamand Wafers and Slices Diamond exhibits the highest thermal conductivity among all materials. Its thermal conductivity is up to 2000 W/mK which is higher a lot than that of copper. Therefore diamond wafers and slices become more and more popular in thermal management as heatspreaders,heatsinks, lithographically patterned metallization, electrical isolation between top and bottom metallization, stress relieving slits for stress free mounting etc. CVD diamond heat spreaders in various shapes,and the typical parameters are as follows: Material                                                thermal conductivity >1000 W/mK Diameter                                              Up to 70mm Surface                                                Polished, lapping, as-cut Thickness                                                 100 - 1500 µm Young's modulus                                       1000-1100Gpa Density                                                 3.5g/cm3 Optical                                                 grade diamond wafers Optical grade diamond wafers are used as window for infrared beam splitters, lenses for terahertz spectroscopy and CO2 laser surgery,Brewster Windows for multi-spectral applications such as free electron lasers, multi-wavelength IR lasers or terahertz optical systems,for Units attenuated total reflection) spectroscopy,for diamond Liquid Cells.

  • InGaAsN epitaxially on GaAs or InP wafers

    PAM-XIAMEN provides InGaAsN epitaxially on GaAs or InP wafers as follows: Layer Doping Thickness (um)                        Remark GaAs   undoped ~500   <001> wafer substrate   InGaAsN*   undoped                  0.150                   band gap <1 eV     Al(0.3)Ga(0.7)As  undoped 0.5         GaAs   undoped 2         Al(0.3)Ga(0.7)As   undoped  0.5           ITEM x/y Doping carrier conc.(cm3) Thickness(um) wave length(um) Lattice mismatch InAs(y)P 0.25 none 5.0*10^16 1.0 -   In(x)GaAs 0.63 none 1.0*10^17 3.0 1.9 600<>600 InAs(y)P 0.25 S 1.0*10^18 205.0 -   InAs(y)P 0.05->0.25 S 1.0*10^18 4.0 -   InP - S 1.0*10^18 0.3 -  

  • InGaAs photodetectors

    Material X Thickness (nm) Dopant Doping concentration InP   1000 N (Sulfur) 3.00E+16 In(x)GaAs 0.53 3000 U/D 5.00E+14 InP   500 N (Sulfur) 3.00E+16 Substrate     SI (Fe)  

  • Picture of InGaN on Sapphire

    PAM-XIAMEN offer InGaN on sapphire, In content in the InGaN layers ranges from 10% to 40 %, attached picture is InGaN template with In content 20%,30%,40%(from left to right),Please see below InGaN picture:

  • Low Temperature GaAs Test Report

    Low Temperature GaAs (LT-GaAs)Experimental Results,We offer LT-GaAs/GaAs, please download LT-GaAs test result below: http://www.powerwaywafer.com/data/article/1379986260677103970.pdf

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