Home / Products / CdZnTe Wafer /

CZT Detector

Products
CZT Detector

CZT Detector

PAM-XIAMEN provides CZT based detectors by solid-state detector technology for x-ray or gamma-ray,which has better energy resolution compared with scintillation crystal based detector, including CZT Planar Detector,CZT Pixilated Detector,CZT Co-Planar Gri

  • Product Details

CZT Detector


1.1CZT Planar Detector


Specifications


HV 

+200 V~ +500 V

Energy range

20 KeV ~ 200 KeV

Operating temperature range 

-20 ~ 40

Sizemm 3   

5×5×2

10×10×2

Energy resolution @59.5 KeV

Counter grade 

15% 

15%

Discriminator grade 

7% ~ 15% 

8% ~ 15%

Spectrometer grade 

7% 

8%

Note 

Other sizes can also be available

Standard 5×5×2mm 3 CZT assembly


Standard 10×10×2mm 3 CZT assembly



1.2CZT Pixilated Detector


Specifications


Application

SPECTγ Camera

 X-ray imaging

Operating temperature range

-20 ~ 40

Typical energy resolution 

6.5%@59.5 KeV

  ——

Count rate

  ——

2M cps/pixel

Typical matrix

Area array detector: 8×8

Area array detector: 8×8

Linear array detector: 1×16

Linear array detector: 1×16

The maximum dimensions of crystal 

40×40×5 mm 3

Note

Other electrode pattern can also be available


Standard 8×8 pixel CZT detector assembly



Standard 8×8 pixel CZT detector assembly



1.3CZT Co-Planar Grid Detectors


Specifications


HV: +1000 V ~ +3000V

Energy range: 50 KeV ~ 3 MeV

Operating temperature range:-20℃ ~ 40℃

Typical energy resolution:<4%@662 KeV

Peak-to-Compton ratio: 3 ~ 5

Standard size(mm 3 ): 10×10×5, 10×10×10


1.4CZT Hemispherical Detector


HV: +200 V ~ +1000 V      Operating temperature range:-20℃ ~ 40℃

Energy range: 50 KeV ~ 3 MeV      Typical energy resolution:<3%@662 KeV

Standard size(mm 3 ) :4×4×2, 5×5×2.5, 10×10×5


Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.
Subject : CZT Detector

Related Products

CZT

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate,X-ray detectors and Gamma-ray detectors, laser optical modulation, high-performance solar cells and other high-tech fields.

nanolithography

Nanofabrication

PAM-XIAMEN Offers photoresist plate with photoresist We can offer Nanolithography (photolithography):Surface preparation, Photoresist apply, Soft bake, Alignment, Exposure, Development,Hard bake, Develop inspect, Etch, Photoresist removal(strip), Final inspection.

silicon epitaxy

Epitaxial Silicon Wafer

Silicon Epitaxial Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer,but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epit1

GaP substrate

GaP wafer

Xiamen Powerway offers GaP wafer - gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

CZT

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate,X-ray detectors and Gamma-ray detectors, laser optical modulation, high-performance solar cells and other high-tech fields.

Silicon Wafer

Float-zone mono-crystalline silicon

FZ-Silicon The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce 1

InAs substrate

InAs wafer

Xiamen Powerway offers InAs wafer - Indium arsenide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

gan on silicon

Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.