PAM-XIAMEN provides CZT based detectors by solid-state detector technology for x-ray or gamma-ray,which has better energy resolution compared with scintillation crystal based detector, including CZT Planar Detector,CZT Pixilated Detector,CZT Co-Planar Gri
CZT Detector
1.1CZT Planar Detector
Specifications
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HV |
+200 V~ +500 V |
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Energy range |
20 KeV ~ 200 KeV |
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Operating temperature range |
-20℃ ~ 40℃ |
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Size（mm 3 ） |
5×5×2 |
10×10×2 |
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Energy resolution @59.5 KeV |
Counter grade |
＞15% |
＞15% |
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Discriminator grade |
7% ~ 15% |
8% ~ 15% |
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Spectrometer grade |
＜7% |
＜8% |
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Note |
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Other sizes can also be available |
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Standard 5×5×2mm 3 CZT assembly
Standard 10×10×2mm 3 CZT assembly
1.2CZT Pixilated Detector
Specifications
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Application |
SPECT、γ Camera |
X-ray imaging |
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Operating temperature range |
-20℃ ~ 40℃ |
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Typical energy resolution |
＜6.5%@59.5 KeV |
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Count rate |
—— |
＞2M cps/pixel |
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Typical matrix |
Area array detector: 8×8 |
Area array detector: 8×8 |
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Linear array detector: 1×16 |
Linear array detector: 1×16 |
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The maximum dimensions of crystal |
40×40×5 mm 3 |
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Note |
Other electrode pattern can also be available |
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Standard 8×8 pixel CZT detector assembly
Standard 8×8 pixel CZT detector assembly
1.3CZT Co-Planar Grid Detectors
Specifications
HV: +1000 V ~ +3000V
Energy range: 50 KeV ~ 3 MeV
Operating temperature range：-20℃ ~ 40℃
Typical energy resolution：＜4%@662 KeV
Peak-to-Compton ratio: 3 ~ 5
Standard size（mm 3 ）: 10×10×5, 10×10×10
1.4CZT Hemispherical Detector
HV: +200 V ~ +1000 V Operating temperature range：-20℃ ~ 40℃
Energy range: 50 KeV ~ 3 MeV Typical energy resolution：＜3%@662 KeV
Standard size（mm 3 ） ：4×4×2, 5×5×2.5, 10×10×5
Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate,X-ray detectors and Gamma-ray detectors, laser optical modulation, high-performance solar cells and other high-tech fields.
Due to SiC physical and electronic properties,Silicon Carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device.
PAM-XIAMEN Offers Dummy Wafer / Test Wafer / Monitor Wafer
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,hi1
PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.
PAM-XIAMEN Offers photoresist plate with photoresist We can offer Nanolithography (photolithography):Surface preparation, Photoresist apply, Soft bake, Alignment, Exposure, Development,Hard bake, Develop inspect, Etch, Photoresist removal(strip), Final inspection.
PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for 1
Xiamen Powerway offers InSb wafer - Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
