Home / Products / Compound Semiconductor /

GaP wafer

Products
GaP wafer GaP wafer

GaP wafer

Xiamen Powerway offers GaP wafer - gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
  • Product Details

Xiamen Powerway offers GaP wafer - gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).


Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.26eV(300K). The polycrystalline material has the appearance of pale orange pieces. Undoped single crystal wafers appear clear orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water.Sulfur or tellurium are used as dopants to produce n-type semiconductors. Zinc is used as a dopant for the p-type semiconductor.Gallium phosphide has applications in optical systems. Its refractive index is between 4.30 at 262 nm (UV), 3.45 at 550 nm (green) and 3.19 at 840 nm (IR).


Specs of GaP Wafer and Substrate
Conducion Type N-type
Dopant S doped
Wafer Diameter 50.8+/-0.5mm
Crystal Orientation (111)+/-0.5°
Flat orientation 111
Flat length 17.5+/-2mm
Carrier Concentration (2-7)x10^7/cm3
Resistivity at RT 0.05-0.4ohm.cm
Mobility 100cm²/V.sec
Etch Pit Density 3*10^5/cm²
Laser Marking upon request
Suface Fnish P/E
Thickness 250+/-20um
Epi Ready Yes
Package Single wafer container or cassette

Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.
Subject : GaP wafer

Related Products

InSb substrate

InSb wafer

Xiamen Powerway offers InSb wafer - Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

InP substrate

InP wafer

Xiamen Powerway offers InP wafer - Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

InAs substrate

InAs wafer

Xiamen Powerway offers InAs wafer - Indium arsenide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

GaSb substrate

GaSb wafer

Xiamen Powerway offers GaSb wafer - gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100)

sic crystal

SiC Wafer Reclaim

PAM-XIAMEN is able to offer the following SiC reclaim wafer services.

GaAs crystal

GaAs Epiwafer

We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications.please contact us for more information.

Germanium substrate

Ge(Germanium) Single Crystals and Wafers

PAM offers semiconductor materials,single crystal (Ge)Germanium Wafer grown by VGF / LEC

Silicon Wafer

Polished wafer

FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)

Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.