Home / Products / Silicon Wafer /

Float-zone mono-crystalline silicon

Products
Float-zone mono-crystalline silicon

Float-zone mono-crystalline silicon

FZ-Silicon


The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce the high inverse-voltage elements and photoelectronic devices.

  • Product Details

Float-zone mono-crystalline silicon


FZ-Silicon


The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce the high inverse-voltage elements and photoelectronic devices.


NTDFZ-Silicon


The mono-crystalline silicon with high-resistivity and uniformity can be achieved by neutron irradiation of FZ-silicon, to ensure the yield and uniformity of produced elements, and is mainly used to produce the silicon rectifier (SR), silicon control (SCR), giant transistor (GTR), gate-turn-off thyristor (GTO), static induction thyristor (SITH), insulate-gate bipolar transistor (IGBT), extra HV diode (PIN), smart power and power IC, etc; it is the main functional material for various frequency converters, rectifiers, large-power control elements, new power electronic devices, detectors, sensors, photoelectronic devices and special power devices..


GDFZ-Silicon


Utilizing the foreign-material diffusion mechanism, add the gas-phase foreign-material during the float-zone process of monocrystalline silicon, to solve the doping problem of float-zone process from the root, and to get the GDFZ-silicon which is N-type or P-type, has the resistivity 0.001-300 Ω.cm, relative good resistivity uniformity and neutron irradiation. It is applicable for producing various semi-conductor power elements, insulate-gate bipolar transistor (IGBT) and high-efficiency solar cell, etc.


CFZ-Silicon


The monocrystalline-silicon is produced with the combination of Czochralski and float-zone processes, and has the quality between the CZ monocrystalline silicon and FZ monocrystalline silicon; the special elements can be doped, such as the Ga, Ge and others. The new-generation CFZ silicon solar wafers are better than various silicon wafers in global PV industry on each performance index; the conversion efficiency of solar panel is up to 24-26%. The products are mainly applied in the high-efficiency solar batteries with the special structure, back-contact, HIT and other special processes, and more widely used in the LED, power elements, automobile, satellite and other various products and fields.


Our advantages at a glance

1.Advanced epitaxy growth equipment and test equipment.

2.Offer the highest quality with low defect density and good surface roughness.

3.Strong research team support and technology support for our customers


FZ monocrystalline silicon specification 

Type

Conduction Type

Orientation

Diameter(mm)

Conductivity(Ω•cm)

High resistance

N&P

<100>&<111>

76.2-200

>1000

NTD

N

<100>&<111>

76.2-200

30-800

CFZ

N&P

<100>&<111>

76.2-200

1-50

GD

N&P

<100>&<111>

76.2-200

       0.001-300                  


Wafer specification

Ingot Parameter

  Item

Description

Growing method

FZ

Orientation

<111>

Off-orientation

4±0.5 degree to the nearest <110>

Type/Dopant

P/Boron

Resistivity

10-20 W.cm

RRV

≤15% (Max edge-Cen)/Cen



Wafer Parameter

 Item

 Description

Diameter

150±0.5 mm

Thickness

675±15 um

Primary Flat Length

57.5±2.5 mm

Primary Flat Orientation

<011>±1 degree

Secondary Flat Length

None

Secondary Flat Orientation

None

TTV

≤5 um

Bow

≤40 um

Warp

≤40 um

Edge Profile

SEMI Standard

Front Surface

Chemical-Mechenical Polishing

LPD

≥0.3 um@≤15 pcs

Back Surface

Acid Etched

Edge Chips

None

Package

Vacuum Packing; Inner Plastic, Outer Aluminum

Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.

Related Products

Silicon Wafer

Test Wafer Monitor Wafer Dummy Wafer

PAM-XIAMEN Offers  Dummy Wafer / Test Wafer / Monitor Wafer

Silicon Wafer

Cz mono-crystalline silicon

CZ-Silicon The heavily/lightly-doped CZ mono-crystalline silicon is suitable for producing various integrated circuits (IC), diodes, triodes, green-energy solar panel. The special elements (such as Ga, Ge) can be added to produce the high-efficiency, radiation-resistant and anti-degenerating solar cell materials for special components.

silicon epitaxy

Epitaxial Silicon Wafer

Silicon Epitaxial Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer,but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epit1

Silicon Wafer

Polished wafer

FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)

Silicon Wafer

Etching wafer

The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, to reduce the costs. There are the low-roughness, low-reflectivity and high-reflectivity etching wafers.

Silicon Wafer

Polished wafer

FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)

sic crystal

SiC Substrate

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,hi1

GaP substrate

GaP wafer

Xiamen Powerway offers GaP wafer - gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.
   
Contact Us Contact Us 
If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.