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Freestanding GaN substrate

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Freestanding GaN substrate

Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.
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Freestanding GaN substrate


PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer  which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density.

Specification of Freestanding GaN substrate

Here shows detail specification:

2"Free-standing (gallium nitride) GaN Substrate

Item

PAM-FS-GaN50-N

PAM-FS-GaN50-SI

Conduction Type

N-type

Semi-insulating

Size

2"(50.8)+/-1mm

Thickness

300+/-50um

Orientation

C-axis(0001)+/-0.5o

Primary Flat Location

(1-100)+/-0.5o

Primary Flat Length

16+/-1mm

Secondary Flat Location

(11-20)+/-3o

Secondary Flat Length

8+/-1mm

Resistivity(300K)

<0.5Ω·cm

>106Ω·cm

Dislocation Density

<5x106cm-2

Marco Defect Density

A grade<=2cm-2  B grade>2cm-2

TTV

<=15um

BOW

<=20um

Surface Finish

Front Surface:Ra<0.2nm.Epi-ready polished

Back Surface:1.Fine ground  2.Rough grinded

Usable Area≥ 90 %




1.5"Free-standing GaN Substrate

Item

PAM-FS-GaN38-N

PAM-FS-GaN38-SI

Conduction Type

N-type

Semi-insulating

Size

1.5"(38.1)+/-0.5mm

Thickness

260+/-20um

Orientation

C-axis(0001)+/-0.5o

Primary Flat Location

(1-100)+/-0.5o

Primary Flat Length

12+/-1mm

Secondary Flat Location

(11-20)+/-3o

Secondary Flat Length

6+/-1mm

Resistivity(300K)

<0.5Ω·cm

>106Ω·cm

Dislocation Density

<5x106cm-2

Marco Defect Density

A grade<=2cm-2  B grade>2cm-2

TTV

<=15um

BOW

<=20um

Surface Finish

Front Surface:Ra<0.2nm.Epi-ready polished

Back Surface:1.Fine ground 2.Rough grinded

Usable Area≥ 90 %

       


15mm,10mm,5mm Free-standing GaN Substrate

Item

PAM-FS-GaN15-N PAM-FS-GaN10-N PAM-FS-GaN5-N

PAM-FS-GaN15-SI PAM-FS-GaN10-SI PAM-FS-GaN5-SI

Conduction Type

N-type

Semi-insulating

Size

14.0mm*15mm   10.0mm*10.5mm   5.0*5.5mm  

Thickness

230+/-20um, 280+/-20um

Orientation

C-axis(0001)+/-0.5o

Primary Flat Location

Primary Flat Length

Secondary Flat Location

Secondary Flat Length

Resistivity(300K)

<0.5Ω·cm

>106Ω·cm

Dislocation Density

<5x106cm-2

Marco Defect Density

0cm-2 

TTV

<=15um

BOW

<=20um

Surface Finish

Front Surface:Ra<0.2nm.Epi-ready polished

Back Surface:1.Fine ground  2.Rough grinded

Usable Area≥ 90 %


Note:

Validation Wafer:Considering convenience of usage, PAM-XIAMEN offer 2" Sapphire Validation wafer for below 2" size Freestanding GaN Substrate


Application of GaN Substrate


Solid State Lighting:GaN devices are used as ultra high brightness light emitting diodes (LEDs), TVs, automobiles, and general lighting  


  DVD Storage: Blue laser diodes

Power Device: GaN devices are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN's low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites

 

Ideal for III-Nitrides re-growth

 

Wireless Base Stations: RF power transistors


Wireless Broadband Access: high frequency MMICs,RF-Circuits MMICs


Pressure Sensors:MEMS


Heat Sensors: Pyro-electric detectors


Power Conditioning: Mixed signal GaN/Si Integration


Automotive Electronics: High temperature electronics

 

Power Transmission Lines: High voltage electronics


Frame Sensors: UV detectors


Solar Cells:GaN's wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride

 

(InGaN) alloys perfect for creating solar cell material. Because of this advantage, InGaN solar cells grown on GaN substrates are poised to become one of the most important    new applications and growth market for GaN substrate wafers.

 

Ideal for HEMTs, FETs


GaN Schottky diode project: We accept custom spec of Schottky diodes fabricated on the HVPE-grown, free-standing gallium nitride (GaN) layers of n- and p-types.

Both contacts (ohmic and Schottky) were deposited on the top surface using Al/Ti and Pd/Ti/Au.                                                    

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If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.