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GaAs Epiwafer

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GaAs Epiwafer

GaAs Epiwafer


We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications.please contact us for more information.


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GaAs Epiwafer


We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications.please contact us for more information.

We have numbers of the United States Veeco's GEN2000, GEN200 large-scale production of epitaxial equipment production line, full set of XRD; PL-Mapping; Surfacescan, and other world-class analysis and testing equipment. The company has more than 12,000 square meters of supporting plant, including world class super-clean semiconductor and a related research and development of the younger generation of clean laboratory facilities


Specification for all new and featured products of MBE III-V compound semiconductor epi wafer:


Substrate Material

Material Capability

Application

GaAs

low temperature GaAs

THz

GaAs

GaAs/GaAlAs/GaAs/GaAs

Schottky Diode

InP

InGaAs

PIN detector

InP

InP/InP/InGaAsP/InP/InGaAs

Laser

GaAs

GaAs/AlAs/GaAs

InP

InP/InAsP/InGaAs/InAsP

GaAs

GaAs/InGaAsN/AlGaAs

/GaAs/AlGaAs

InP

InP/InGaAs/InP

photodetectors

InP

InP/InGaAs/InP

InP

InP/InGaAs

GaAs

GaAs/InGaP/GaAs/AlInP

Solar Cell

/InGaP/AlInP/InGaP/AlInP

GaAs

GaAs/GaInP/GaInAs/GaAs/AlGaAs/GalnP/GalnAs

Solar Cell

/GalnP/GaAs/AlGaAs/AllnP/GalnP/AllnP/GalnAs

InP

InP/GaInP

GaAs

GaAs/AlInP

GaAs

GaAs/AlGaAs/GalnP/AlGaAs/GaAs

703nm Laser

GaAs

GaAs/AlGaAs/GaAs

GaAs

GaAs/AlGaAs/GaAs/AlGaAs/GaAs

HEMT

GaAs

GaAs/AlAs/GaAs/AlAs/GaAs

mHEMT

GaAs

GaAs/DBR/AlGaInP/MQW/AlGaInP/GaP

LED wafer,solid state lighting

GaAs

GaAs/GalnP/AlGaInP/GaInP

635nm,660nm,808nm,780nm, 785nm,

/GaAsP/GaAs/GaAs substrate

 950nm, 1300nm,1550nm Laser

GaSb

AlSb/GaInSb/InAs

IR detector,PIN,sensing, IR cemera

silicon

InP or GaAs on Silicon

High speed IC/microprocessors

InSb

Beryllium doped InSb

/ undoped InSb/Te doped InSb/



For more detail specification, please review the following:


LT-GaAs epi layer on GaAs substrate


GaAs Schottky Diode Epitaxial Wafers


InGaAs/InP epi wafer for PIN


InGaAsP/InGaAs on InP substrates

GaAs/AlAs wafer

InGaAsN epitaxially on GaAs or InP wafers


Structure for InGaAs photodetectors

InP/InGaAs/InP epi wafer


InGaAs Structure Wafer

AlGaP/GaAs Epi Wafer for Solar Cell

Triple-junction solar cells  

GaAs Epitaxy

GaInP/InP epi wafer

AlInP/GaAs epi wafer


Layer structure of 703nm Laser

808nm laser wafers

780nm laser wafers

GaAs PIN epi wafer

GaAs/AlGaAs/GaAs epi wafer

GaAs Based Epitaxial Wafer for LED and LD, please see below desc.

AlGaInP epi wafer

Yellow-Green AlGaInP/GaAs LED wafer:565-575nm


GaAs HEMT epi wafer

GaAs pHEMT epi wafer (GaAs, AlGaAs, InGaAs), please see below desc.

GaAs mHEMT epi wafer (mHEMT: metamorphic high electron mobility transistor)

GaAs HBT epi wafer (GaAs HBT is bipolar junction transistors, which are composed of at least two different semiconductors,which is by GaAs based technology.)Metal-semiconductor field effect transistor (MESFET)


Heterojunction field effect transistor (HFET)

High electron mobility transistor (HEMT)

Pseudomorphic high electron mobility transistor (pHEMT)

Resonant tunnel diode (RTD)

PiN diode

hall effect devices

variable capacitance diode (VCD)

Now we list some specifications:


GaAs HEMT epi wafer, size:2~6inch

 Item

   Specifications

  Remark

Parameter

Al composition/In composition/Sheet resistance

Please contact our tech department

Hall mobility/2DEG Concentration

Measurement tech

X-ray diffraction/Eddy current

Please contact our tech department

Un-contact hall

Typical valve

Struture dependent

Please contact our tech department

5000~6500cm2/V ·S/0.5~1.0x 1012cm-2

Standard tolerance

±0.01/±3%/none

Please contact our tech department


GaAs( gallium arsenide) pHEMT epi wafer,size:2~6inch

 Item

   Specifications

  Remark

Parameter

Al composition/In composition/Sheet resistance

Please contact our tech department

Hall mobility/2DEG Concentration

Measurement tech

X-ray diffraction/Eddy current

Please contact our tech department

Un-contact hall

Typical valve

Struture dependent 

Please contact our tech department

5000~6800cm2/V.S/2.0~3.4X1012cm-2

Standard tolaerance

±0.01/±3%none

Please contact our tech department

Remark:GaAs pHEMT: Compared with GaAs HEMT, GaAs PHEMT also incorporates InxGa1-xAs,where InxAs  is constrained to x < 0.3 for GaAs-based devices. Structures grown with the same lattice constant as HEMT, but different band gaps are simply referred to as lattice-matched HEMTs.


GaAs mHEMT epi wafer, size:2~6inch

 Item

   Specifications

  Remark

Parameter

In composition/Sheet resistance

Please contact our tech department

Hall mobility/2DEG Concentration

Measurement tech

X-ray diffraction/Eddy current

Please contact our tech department

Un-contact hall

Typical valve

Struture dependent

Please contact our tech department

8000~10000cm2/V ·S/2.0~3.6x 1012cm-2  

Standard tolerance

±3%/none

Please contact our tech department


InP HEMT epi wafer,size:2~4inch

 Item

   Specifications

  Remark

Parameter

In composition/Sheet resistance/Hall mobility

Please contact our tech department


Remark:GaAs(Gallium arsenide) is a compound semiconductor material,a mixture of two elements, gallium (Ga) and arsenic (As). The uses of Gallium arsenide are varied and include being used in LED/LD, field-effect transistors (FETs), and integrated circuits (ICs)


Device applications

RF Switch

Power and low-noise amplifiers

Hall sensor

Optical modulator

Wireless: cell phone or base stations

Automotive radar

MMIC,RFIC

Optical Fiber Communications


GaAs Epi Wafer for LED/IR serie:


1.General description:

1.1 Growth Method: MOCVD  

1.2 GaAs epi wafer for Wireless Networking

1.3 GaAs epi wafer for LED /IR and LD/PD


2.Epi wafer specs:

2.1 Wafer size: 2”diameter

2.2Epi Wafer Structure(from top to bottom):

P+GaAs

p-GaP

p-AlGaInP

MQW-AlGaInP

n-AlGaInP

DBR n-ALGaAs/AlAs

Buffer

GaAs substrate


3.Chip sepcification (Base on 9mil*9mil chips)


3.1 Parameter

Chip Size 9mil*9mil

Thickness 190±10um

Electrode diameter 90um±5um


3.2 Optical-elctric characters(Ir=20mA,22℃)

Wavelength 620~625nm

Forward voltage 1.9~2.2v

Reverse voltage ≥10v

Reverse current 0-1uA


3.3 Light intensity characters(Ir=20mA,22℃)

IV(MCD) 80-140


3.4 Epi wafer avelength

Item

Unit

Red

Yellow

Yellow/Green

Description

Wave Length (λD)

nm

585,615,620 ~ 630

587 ~ 592

568 ~ 573

IF =20mA


Growth Methods:MOCVD,MBE

epitaxy = growth of film with a crystallographic relationship between film and substrate homoepitaxy (autoepitaxy, isoepitaxy) = film and substrate are same material  heteroepitaxy = film and substrate are different materialsPlease more information of growth methods, please click the following:http://www.powerwaywafer.com/Wafer-Technology.html

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If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.
Subject : GaAs Epiwafer

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