We are running GaInP/GaAs/Ge triple-junction cells fabricated by a MOCVD technique and made of high-quality III-V compounds materials that deliver significantly high efficiency. Compared with conventional solar cells, multi-junction solar cells are more efficient but also more expensive to manufacture. Triple-junction cells are more cost effective. They are used in space applications. And now we offer a epi wafer structure as follows
|
Layer |
|
Mole Fraction (x) |
Mole Fraction (y) |
Thickness (um) |
Type |
CV Level (cm-3) |
|
|
15 |
GaIn(x)As |
0.016 |
|
0.2 |
N |
>5.00e18 |
|
|
14 |
Al(x)InP |
|
|
0.04 |
N |
5.00E+17 |
|
|
13 |
GaIn(x)P |
|
|
0.1 |
N |
2.00E+18 |
|
|
12 |
GaIn(x)P |
|
|
0.5 |
P |
|
|
|
11 |
AlIn(x)P |
|
|
0.1 |
P |
|
|
|
10 |
Al(x)GaAs |
|
|
0.015 |
P |
|
|
|
9 |
GaAs |
|
|
0.015 |
N |
|
|
|
8 |
GaIn(x)P |
0.554 |
|
0.1 |
N |
|
|
|
7 |
GaIn(x)As |
0.016 |
|
0.1 |
N |
|
|
|
6 |
GaIn(x)As |
0.016 |
|
3 |
P |
1-2e17 |
|
|
5 |
GaIn(x)P |
0.554 |
|
0.1 |
P |
1-2e18 |
|
|
4 |
Al(x)GaAs |
0.4 |
|
0.03 |
P |
5.00E+19 |
|
|
3 |
GaAs |
|
|
0.03 |
N |
2.00E+19 |
|
|
2 |
GaIn(x)As |
0.016 |
|
0.5 |
N |
2.00E+18 |
|
|
1 |
GaIn(x)P |
0.554 |
|
0.06 |
N |
|
We also offer epi wafers of single-junction and dual-junction InGaP/GaAs solar cells,with different structures of epitaxial layers (AlGaAs,InGaP) grown on GaAs for solar cell application, please click AlGaP/GaAs Epi Wafer for Solar Cell
Source: semiconductorwafers.net
For more information, please visit our website: www.semiconductorwafers.net,
send us email at luna@powerwaywafer.com or powerwaymaterial@gmail.com.
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
