Home / News /

GaAs HEMT epi wafer

News

GaAs HEMT epi wafer

2017-08-05

We can offer 4"GaAs HEMT epi wafer, please see below typical structure:


1) 4" SI substrate GaAs with [100] orientation,

2) [buffer] superlattice of Al(0.3)Ga(0.7)As/GaAs with thicknesses10/3 nm, repeat 170 times,

3) barrier Al(0.3)Ga(0.7)As 400 nm,

4) quantum well GaAs 20 nm,

5) spacer Al(0.3)Ga(0.7)As 15 nm,

6) delta-doping with Si to create electron density 5-6*10^11 cm^(-2),

7) barrier Al(0.3)Ga(0.7)As 180 nm,

8) cap layer GaAs 15nm.


Source: semiconductorwafers.net


For more information, please visit our website:http://www.semiconductorwafers.net,

send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.


Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.
   
Contact Us Contact Us 
If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.