We can offer 4"GaAs mHEMT epi wafer(GaAs MBE epiwafer), please see below typical structure:
N+ In0.53Ga0.47As 20nm (n=1x10^19 cm^-3)
N+ InP etch stopper 5nm (n=5x10^18 cm^-3)
i- In0.52Al0.48As Schottky barrier 10nm
Si-delta-doping (n=6x10^12 cm^-2)
i- In0.52Al0.48As spacer 4nm
i-In0.53Ga0.47As channel 15nm
In0.52Al0.48As buffer 300nm
metamorphic buffer 300nm (linearly graded from substrate to
In0.53Ga0.47As)
S.I. GaAs substrate
Source: semiconductorwafers.net
For more information, please visit our website:http://www.semiconductorwafers.net,
send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
