Who We Are

As the lead manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconducto1
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After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool. 

In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan -CEO Of Xiamen Powerway Advanced Material Co., Ltd

Our Products

blue laser

GaN Templates

PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates, silicon carbide or silicon.PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial1

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Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

GaAs crystal

GaAs (Gallium Arsenide) Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to  polishing processing and built a 100-class clean room for 1

sic crystal

SiC Epitaxy

We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.

sic crystal

SiC Substrate

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,hi1

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GaN based LED Epitaxial Wafer

PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.

gan HEMT epitaxy

GaN HEMT epitaxial wafer

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.

sic crystal

SiC Wafer Reclaim

PAM-XIAMEN is able to offer the following SiC reclaim wafer services.

Why Choose Us

  • Free And Professional Technology Support

    You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

  • Good Sales Service

    Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

  • 25+ Years Experiences

    With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

  • Reliable Quality

    Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for1

"We have been using the Powerway epi wafers for some of our work.We are very impressed with the quality of the epi"
James S.Speck, Materials Department University of California
"Dear PAM-XIAMEN teams, thank you for your profession opinion, the problem was solved, we are so glad to be your partner"
Raman K. Chauhan, Seren Photonics
"Thank you for quick reply of my questions and competitive price, it is very useful for us, we will order again soon"
Markus Sieger, University of Ulm
"The silicon carbide wafers have arrived today,and we really pleased with them! Thumbs up to your production crew!"
Dennis, University of Exeter

The World’s Most Famous Universities & Companies Trust Us

Latest News

Generation of difference-frequency radiation in the far- and mid-IR ranges in a two-chip laser based on gallium arsenide on a germanium substrate


The possibility of efficient generation of difference-frequency radiation in the far- and mid-IR ranges in a two-chip laser based on gallium arsenide grown on a germanium substrate is considered. It is shown that a laser with a waveguide of width 100 μm emitting 1 W in the near-IR range can generate ≈40 μW at the difference frequency in the region 5—50 THz at room temperature. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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PAM XIAMEN is comparable to the UK IQE to build Asian VCSEL epitaxial core supply chain


PAM XIAMEN is comparable to the UK IQE to build Asian VCSEL epitaxial core supply chain Xiamen Powerway focuses on high-end compound semiconductor epitaxial R&D and manufacturing. In 2018, the 4-inch and 6-inch VCSELs were mass-produced and entered the mainstream chip manufacturers in Taiwan. Utilizing state-of-the-art MBE (Molecular Epitaxial Beam Epitaxy) mass production technology to achieve the highest quality of the industry's largest quality VCSEL epitaxial products. As more and more smartphone and IT equipment vendors follow Apple's footsteps, VCEL (Vertical Cavity Surface Emitting Lasers)-based 3D sensor systems will be integrated into their new electronics. According to Memes Consulting, the shipment of VCSEL chips for smartphones next year is expected to double to 240 million in 2018. In the next five years, the global VCSEL market will continue to grow with the capacity of relevant suppliers in the international arena. The market size will grow to $3.12 billion by 2022, ...

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Semicoherent growth of Bi2Te3 layers on InP substrates by hot wall epitaxy


We search for optimum growth conditions to realize flat BiTe layers on InP(111)B by hot wall epitaxy. The substrate provides a relatively small lattice mismatch, and so (0001)-oriented layers grow semicoherently. The temperature window for the growth is found to be narrow due to the nonzero lattice mismatch and rapid re-evaporation of BiTe. The crystalline qualities evaluated by means of x-ray diffraction reveal deteriorations when the substrate temperature deviates from the optimum not only to low temperatures but also to high temperatures. For high substrate temperatures, the Bi composition increases as Te is partially lost by sublimation. We show, in addition, that the exposure of the BiTe flux at even higher temperatures results in anisotropic etching of the substrates due, presumably, to the Bi substitution by the In atoms from the substrates. By growing BiTe layers on InP(001), we demonstrate that the bond anisotropy on the substrate surface gives rise to a reduction in the in-pl...

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Diamond turning of small Fresnel lens array in single crystal InSb


A small Fresnel lens array was diamond turned in a single crystal InSb wafer using a half-radius negative rake angle (−25°) single-point diamond tool. The machined array consisted of three concave Fresnel lenses cut under different machining sequences. The Fresnel lens profiles were designed to operate in the paraxial domain having a quadratic phase distribution. The sample was examined by scanning electron microscopy and an optical profilometer. Optical profilometry was also used to measure the surface roughness of the machined surface. Ductile ribbon-like chips were observed on the cutting tool rake face. No signs of cutting edge wear was observed on the diamond tool. The machined surface presented an amorphous phase probed by micro Raman spectroscopy. A successful heat treatment of annealing was carried out to recover the crystalline phase on the machined surface. The results indicated that it is possible to perform a 'mechanical lithography' process in single crystal semiconductors...

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Layered growth modelling of epitaxial growth processes for SiC polytypes


Epitaxial growth processes for SiC polytypes in which a SiC substrate is employed are studied using a layered growth model. The corresponding phase diagrams of epitaxial growth processes are given. First-principles calculations are used to determine the parameters in the layered growth model. The layered growth phase diagrams show that when the rearrangement of atoms in one surface Si–C bilayer is allowed, the 3C-SiC structure is formed. When the rearrangement of atoms in two surface Si–C bilayers is allowed, the 4H-SiC structure is formed. When the rearrangement of atoms in more than two surface Si–C bilayers, excepting the case of five surface Si–C bilayers, is allowed, the 6H-SiC structure is formed, which is also shown to be the ground state structure. When the rearrangement of atoms in five surface Si–C bilayers is allowed, the 15R-SiC structure is formed. Thus the 3C-SiC phase would grow epitaxially at low temperature, the 4H-SiC phase would grow epitaxially at intermediate tempe...

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Processing and mechanical properties of aluminium-silicon carbide metal matrix composites


In this study, aluminium-silicon carbide (Al-SiC) metal matrix composites (MMCs) of different compositions were prepared under different compaction loads. Three different types Al-SiC composite specimens having 10%, 20% and 30% volume fractions of silicon carbide were fabricated using conventional powder metallurgy (PM) route. The specimens of different compositions were prepared under different compaction loads 10 ton and 15 ton. The effect of volume fraction of SiC particulates and compaction load on the properties of Al/SiC composites were investigated. The obtained results show that density and hardness of the composites are greatly influenced by volume fraction of silicon carbide particulates. Results also show that density, hardness and microstructure of Al-SiC composites are significantly influenced depending on the compaction load. The increase in the volume fraction of SiC enhances the density and hardness of the Al/SiC composites. For 15 ton compaction load, the composites sh...

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Defects in and device properties of semi-insulating GaAs


It is well known that there are many arsenic precipitates in LEC GaAs, the dimensions of which are 500-2000 AA. The authors have recently found that these arsenic precipitates affect the device properties of chloride epitaxial-type MESFETS. They also affect the formation of small surface oval defects on MBE layers. To reduce the density of these arsenic precipitates, a multiple-wafer-annealing (MWA) technology has been developed in which wafers are annealed first at 1100 degrees C and then at 950 degrees C. By this annealing, highly uniform substrates with low arsenic precipitate densities, uniform PL and CL, uniform microscopic resistivity distributions and uniform surface morphology after AB etching can be obtained. These MWA wafers showed low threshold voltage variations for condensed ion-implantation-type MESFETS. In the present paper recent works are reviewed and the mechanism of arsenic precipitation is discussed from the viewpoint of stoichiometry. source:iopscience Other more C...

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Surface passivation and electrical properties of p-CdZnTe crystal


The electrical properties of Au/p-CdZnTe contacts with different surface treatments, especially passivation treatment, are investigated in this paper. After the passivation, a TeO2 oxide layer with a thickness of 3.1 nm on the CdZnTe surface was identified by XPS analysis. Meanwhile, photoluminescence (PL) spectra confirmed that the passivation treatment minimized the surface trap state density and decreased the deep-level defects related to recombination of Cd vacancies. Current–voltage and capacitance–voltage characteristics were measured. It was shown that the passivation treatment could increase the barrier height of the Au/p-CdZnTe contact and decrease the leakage current. source:iopscience Other more CdZnTe products like CdZnTe Wafer ,CZT Crystal ,Cadmium Zinc Telluride ,welcome visit our website:www.semiconductorwafers.net Send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers


Thermal management of high-power semiconductor lasers is of great importance since the output power and beam quality are affected by the temperature rise of the gain region. Thermal simulations of a vertical-external-cavity surface-emitting laser by a finite-element method showed that the solder layer between the semiconductor thin film consisting of the gain region and a heat sink has a strong influence on the thermal resistance and direct bonding is preferred to achieve effective heat dissipation.  To realize thin-film semiconductor lasers directly bonded on a high-thermal-conductivity substrate, surface-activated bonding using an argon fast atom beam was applied to the bonding of gallium arsenide (GaAs Wafer) and silicon carbide wafer (SiC wafers). The GaAs or SiC structure was demonstrated in the wafer scale (2 in. in diameter) at room temperature. The cross-sectional transmission electron microscopy observations showed that void-free bonding interfaces were achieved...

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High Uniform Waveguide Photodiodes Fabricated on a 2-inch InP Wafer with Low Darkcurrent and High Responsivity


We have fabricated waveguide photodiodes with high uniform characteristics on a 2-inch InP wafer introducing a novel process. The 2-inch wafer fabrication procedure was carried out successfully by utilizing SiNx deposition on the back of the wafer in order to compensate wafer warp. Almost all the measured waveguide photodiodes exhibited low darkcurrent (average 419 pA, σ= 49 pA at 10 V reverse bias voltage) throughout the 2-inch wafer, and high responsivity of 0.987 A/W (σ=0.011 A/W) was obtained in a consecutive 60-channel array at the input wavelength of 1.3 µm. In addition, uniformity of frequency response was also confirmed. source:iopscience For more information about InP wafer, GaAs wafer, Gallium Nitride Wafer etc wafer products,please visit our website: semiconductorwafers.net Send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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