Who We Are

As the lead manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconducto1
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After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool. 

In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan -CEO Of Xiamen Powerway Advanced Material Co., Ltd

Our Products

blue laser

GaN Templates

PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates, silicon carbide or silicon.PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial1

gan on silicon

Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

GaAs crystal

GaAs (Gallium Arsenide) Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to  polishing processing and built a 100-class clean room for 1

sic crystal

SiC Epitaxy

We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.

sic crystal

SiC Substrate

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,hi1

gan expitaxy

GaN based LED Epitaxial Wafer

PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.

gan HEMT epitaxy

GaN HEMT epitaxial wafer

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.

sic crystal

SiC Wafer Reclaim

PAM-XIAMEN is able to offer the following SiC reclaim wafer services.

Why Choose Us

  • Free And Professional Technology Support

    You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

  • Good Sales Service

    Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

  • 25+ Years Experiences

    With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

  • Reliable Quality

    Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for1

"We have been using the Powerway epi wafers for some of our work.We are very impressed with the quality of the epi"
James S.Speck, Materials Department University of California
"Dear PAM-XIAMEN teams, thank you for your profession opinion, the problem was solved, we are so glad to be your partner"
Raman K. Chauhan, Seren Photonics
"Thank you for quick reply of my questions and competitive price, it is very useful for us, we will order again soon"
Markus Sieger, University of Ulm
"The silicon carbide wafers have arrived today,and we really pleased with them! Thumbs up to your production crew!"
Dennis, University of Exeter

The World’s Most Famous Universities & Companies Trust Us

Latest News

PAM-XIAMEN Offers GaAs LED wafer


Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAs epi wafer and other related products and services announced the new availability of size 2”&4”  is on mass production in 2010. This new product represents a natural addition to PAM-XIAMEN's product line. Dr. Shaka, said, "We are pleased to offer GaAs LED epi wafer to our customers including many who are developing better and more reliable for Red Led. It includes algainp led structure with multi quantum well,including DBR layer for LED chip industry, wavelength range from 620nm to 780nm by MOCVD. Therein, AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers.The availability improve boule growth and wafering processes." and "Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our led epitaxy ...

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Modulated doping improves GaN-based vertical-cavity surface-emitting lasers


Schematic of a 10-pair Si-doped AlInN/GaN DBR structure for vertical current injection and (b) a Si-doping profile in a pair of AlInN/GaN layers. Credit: Japan Society of Applied Physics (JSAP) Researchers at Meijo University and Nagoya University in Japan demonstrated a design of GaN-based vertical-cavity surface-emitting lasers (VCSELs) that provides good electrical conductivity and is readily grown. The findings are reported in Applied Physics Express. This research is featured in the November 2016 issue of the online JSAP Bulletin. "GaN-based vertical-cavity surface-emitting lasers (VCSELs) are expected to be adopted in various applications, such as retinal scanning displays, adaptive headlights, and high-speed visible-light communication systems," explain Tetsuya Takeuchi and colleagues at Meijo University and Nagoya University in Japan in their latest report. However, so far, the structures designed for commercialising these devices have poor conducting properties, and existing a...

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PAM-XIAMEN Offers High Purity Semi-Insulating SiC substrate


Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of High Purity Semi-Insulating SiC substrate and other related products and services announced the new availability of size 2”&3”&4”  is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN's product line. Dr. Shaka, said, "We are pleased to offer High Purity Semi-Insulating SiC substrate to our customers. 4H Semi-Insulating Silicon Carbide (SiC) substrates that are available in on-axis orientation. The unique HTCVD crystal growth technology is the key enabler to purer products combining high and uniform resistivity with a very low defect density. The availability improve boule growth and wafering processes." and "Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our High Purity Semi-Insulating SiC substrate are natural by products of our ongoing efforts, currently we are devoted to continuously ...

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Comb-drive GaN micro-mirror on a GaN-on-silicon platform


We report here a double-sided process for the fabrication of a comb-drive GaN micro-mirror on a GaN-on-silicon platform. A silicon substrate is first patterned from the backside and removed by deep reactive ion etching, resulting in totally suspended GaN slabs. GaN microstructures including the torsion bars, movable combs and mirror plate are then defined on a freestanding GaN slab by the backside alignment technique and generated by fast atom beam etching with Cl2 gas. Although the fabricated comb-drive GaN micro-mirrors are deflected by the residual stress in GaN thin films, they can operate on a high resistivity silicon substrate without introducing any additional isolation layer. The optical rotation angles are experimentally characterized in the rotation experiments. This work opens the possibility of producing GaN optical micro-electro-mechanical-system (MEMS) devices on a GaN-on-silicon platform. Source:IOPscience For more information, please visit our website: www.semiconductor...

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3.0 MeV proton-irradiation induced non-radiative recombination center in the GaAs middle cell and the GaInP top cell of triple-junction solar cells


3.0 MeV proton-irradiation effects on the GaAs middle cell and the GaInP top cell of n+-p GaInP/GaAs/Ge triple-junction (3J) solar cells have been analyzed using temperature-dependent photoluminescence (PL) technique. The E5 (Ec - 0.96 eV) electron trap in the GaAs middle cell, the H2 (Ev + 0.55 eV) hole trap in the GaInP top cell are identified as the proton irradiation-induced non-radiative recombination centers, respectively, causing the performance degradation of the triple-junction solar cells. The GaAs middle cell is less resistant to proton irradiation than the GaInP top cell. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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SiC Crystal


What we provide:

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Detail Application of Silicon Carbide


Detail Application of Silicon Carbide Because of SiC physical and electronic properties,silicon carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device. Many researchers know the general SiC application:III-V Nitride Deposition;Optoelectronic Devices;High Power Devices;High Temperature Devices;High Frequency Power Devices.But few people knows detail applications, here we list some detail application and make some explanations: 1.SiC substrate for X-ray monochromators: such as using SiC's large d-spacing of about 15 A 2.SiC substrate for high voltage devices 3.SiC substrate for diamond film growth by microwave plasma-enhanced chemical vapor deposition 4.For silicon carbide p-n diode 5.SiC substrate for optical window: such as for very short (< 100 fs) and intense (> 100 GW/cm2) laser pulses with a wavelength of 1300 nm. It should have a...

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Crystal wafer


Crystal wafer(SiC wafer,gan wafer,gaas wafer,ge wafer,CZT wafer,AlN wafer,Si wafer) A wafer, also called a slice or substrate, is a thin slice of semiconductor material, such as a crystalline silicon, used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells. The wafer serves as the substrate for microelectronic devices built in and over the wafer and undergoes many microfabrication process steps such as doping or ion implantation, etching, deposition of various materials, and photolithographic patterning. Finally the individual microcircuits are separated (dicing) and packaged. XiamenPowerway Advanced Material Co.,Ltd offers wide range crystal wafer as follows: 1)SiC crystal wafer:2”,3”,4” Orientation :0°/4°±0.5° Single Crystal 4H/6H Thickness: (250 ± 25) μm, (330 ± 25) μm,(430 ± 25) μm Type:N/SI Dopant:Nitrogen/V Resistivity (RT): 0.02 ~ 0.1 Ω·cm/>1E5 Ω·cm FWHM: A<30 arcsec B/C/D <50 arcsec Packaging:Single ...

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Epitaxial Wafer


Products Thanks to MOCVD and MBE technology,PAM-XIAMEN, a epitaxial wafer supplier, offers epitaxial wafer products, including GaN epitaxial wafer, GaAs epitaxial wafer, SiC epitaxial wafer, InP epitaxial wafer, and now we give a brief introduction as follows: 1)GaN epitaxial growth on sapphire template; Conduction Type: Si doped (N+) Thickness:4um,20um,30um,50um,100um Orientation: c-axis (0001) ± 1.0° Resistivity: <0.05 Ohm.cm Dislocation Density:<1x108cm-2 Substrate Structure: GaN on Sapphire(0001) Front Surface Finish (Ga-face): As-grown Back Surface Finish: SSP or DSP Usable Area: ≥ 90 % Available Sizes: 2” (50.8 mm), 3” (76.2 mm) and 4” (100 mm) Available Grades: Production, Research and Rider 2)AlN epitaxial growth on sapphire template; Conduction Type: semi-insulating Thickness:50-1000nm+/- 10% Orientation: C-axis(0001)+/-1O Orientation Flat:A-plane XRD FWHM of (0002):<200 arcsec Substrate Structure: AlN on sapphire Back Surface Finish: SSP or DSP,epi-ready Usable Area:...

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Molecular beam epitaxy growth of germanium junctions for multi-junction solar cell applications


We report on the molecular beam epitaxy (MBE) growth and device characteristics of Ge solar cells. Integrating a Ge bottom cell beneath a lattice-matched triple junction stack grown by MBE could enable ultra-high efficiencies without metamorphic growth or wafer bonding. However, a diffused junction cannot be readily formed in Ge by MBE due to the low sticking coefficient of group-V molecules on Ge surfaces. We therefore realized Ge junctions by growth of homo-epitaxial n-Ge on p-Ge wafers within a standard III–V MBE system. We then fabricated Ge solar cells, finding growth temperature and post-growth annealing to be key factors for achieving high efficiency. Open-circuit voltage and fill factor values of ~0.175 V and ~0.59 without a window layer were obtained, both of which are comparable to diffused Ge junctions formed by metal-organic vapor phase epitaxy. We also demonstrate growth of high-quality, single-domain GaAs on the Ge junction, as needed for subsequent growth of III–V subcel...

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