Who We Are

As the lead manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconducto1
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After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool. 

In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan -CEO Of Xiamen Powerway Advanced Material Co., Ltd

Our Products

blue laser

GaN Templates

PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates, silicon carbide or silicon.PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial1

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Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

GaAs crystal

GaAs (Gallium Arsenide) Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to  polishing processing and built a 100-class clean room for 1

sic crystal

SiC Epitaxy

We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.

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SiC Substrate

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,hi1

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GaN based LED Epitaxial Wafer

PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.

gan HEMT epitaxy

GaN HEMT epitaxial wafer

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.

sic crystal

SiC Wafer Reclaim

PAM-XIAMEN is able to offer the following SiC reclaim wafer services.

Why Choose Us

  • Free And Professional Technology Support

    You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

  • Good Sales Service

    Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

  • 25+ Years Experiences

    With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

  • Reliable Quality

    Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for1

"We have been using the Powerway epi wafers for some of our work.We are very impressed with the quality of the epi"
James S.Speck, Materials Department University of California
"Dear PAM-XIAMEN teams, thank you for your profession opinion, the problem was solved, we are so glad to be your partner"
Raman K. Chauhan, Seren Photonics
"Thank you for quick reply of my questions and competitive price, it is very useful for us, we will order again soon"
Markus Sieger, University of Ulm
"The silicon carbide wafers have arrived today,and we really pleased with them! Thumbs up to your production crew!"
Dennis, University of Exeter

The World’s Most Famous Universities & Companies Trust Us

Latest News

Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method


This paper reports two inch gallium nitride (GaN) substrates fabricated from bulk GaN crystals grown in the near equilibrium ammonothermal method. 2'' GaN wafers sliced from bulk GaN crystals have a full width half maximum of the 002 X-ray rocking curve of 50 arcsec or less, a dislocation density of mid-105 cm−2 or less, and an electron density of about 2 × 1019 cm−3. The high electron density is attributed to an oxygen impurity in the crystal. Through extensive surface preparation, the Ga surface of the wafer shows an atomic step structure. Additionally, removal of subsurface damage was confirmed with grazing angle X-ray rocking curve measurements from the 114 diffraction. High-power p–n diode structures were grown with metalorganic chemical vapor deposition. The fabricated devices showed a breakdown voltage of over 1200 V with sufficiently low series resistance. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at s...

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Enhancement of the quality of InAsSb epilayers using InAsSb graded and InSb buffer layers grown by hot wall epitaxy


We have investigated the structural and electrical properties of InAsxSb1−x epilayers grown on GaAs(0 0 1) substrates by hot wall epitaxy. The epilayers were grown on an InAsSb graded layer and an InSb buffer layer. The arsenic composition (x) of the InAsxSb1−x epilayer was calculated using x-ray diffraction and found to be 0.5. The graded layers were grown with As temperature gradients of 2 and 0.5 °C min−1. The three-dimensional (3D) island growth due to the large lattice mismatch between InAsSb and GaAs was observed by scanning electron microscopy. As the thicknesses of the InAsSb graded layer and the InSb buffer layer are increased, a transition from 3D island growth to two-dimensional plateau-like growth is observed. The x-ray rocking curve measurements indicate that full-width at half-maximum values of the epilayers were decreased by using the graded and buffer layers. A dramatic enhancement of the electron mobility of the grown layers was observed by Hall effect measurements. So...

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Quality Variation of ZnSe Heteroepitaxial Layers Correlated with Nonuniformity in the GaAs Substrate Wafer


ZnSe layers are grown heteroepitaxially on substrates cut from a LEC-grown, undoped semi-insulating GaAs(100) wafer along the diameter parallel to the [001] axis. The intensities of free-exciton photoluminescence and X-ray diffraction from the ZnSe layers show an M-shaped profile along the GaAs wafer diameter, and are inversely correlated with the etch-pit-density distribution of the GaAs wafer. This observation gives, for the first time, experimental evidence that the quality of ZnSe heteroepitaxial layers grown by recent epitaxial techniques can be limited by the quality of GaAs substrates. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy


Smooth and fully relaxed highly boron-doped germanium layers were grown directly on Si(001) substrates using carbon-mediated epitaxy. A doping level of  was measured by several methods. Using high-resolution x-ray diffraction we observed different lattice parameters for intrinsic and highly boron-doped samples. A lattice parameter of a Ge:B = 5.653 Å was calculated using the results obtained by reciprocal space mapping around the (113) reflection and the model of tetragonal distortion. The observed lattice contraction was adapted and brought in accordance with a theoretical model developed for ultra-highly boron-doped silicon. Raman spectroscopy was performed on the intrinsic and doped samples. A shift in the first order phonon scattering peak was observed and attributed to the high doping level. A doping level of  was calculated by comparison with literature. We also observed a difference between the intrinsic and doped sample in the range of second order phonon scattering. ...

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Epitaxial CdS Layers Deposited on InP Substrates


The CdS layers were deposited on InP substrates by using the (H2–CdS) vapor growth technique. The single crystal layers of hexagonal CdS were obtained on InP (111), (110) and (100) with the following heteroepitaxial relationships; (0001) CdS//(111) InP and [bar 12bar 10] CdS//[01bar 1] InP, (01bar 13) CdS//(110) InP and [bar 2110] CdS//[bar 110] InP, (30bar 34) CdS//(100) InP and [bar 12bar 10] CdS//[01bar 1] InP. The CdS layers deposited on InP (bar 1bar 1bar 1) were identfied in terms of the twinned hexagonal crystals, twin planes of which were nearly parallel to (30bar 3bar 4) and its crystallographic equivalents. The compositional gradients were observed at the interface of the deposits and the substrates. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Absorption and dispersion in undoped epitaxial GaSb layer


In this paper, we present the results of a theoretical and experimental investigation into the refractive index and absorption, at room temperature, of a 4 μm-thick undoped epitaxial layer of GaSb deposited on a GaAs substrate. A theoretical formula for optical transmission through an etalon was derived, taking into account the finite coherence length of the light. This formula was used to analyse the measured transmission spectra. The refractive index was determined in a wide spectral range, between 0.105 eV and 0.715 eV. The absorption was determined for photon energies between 0.28 eV and 0.95 eV. An Urbach tail was observed in the absorption spectrum, as well as a constant increase in absorption in the spectral region above the band gap. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Study on Cd vacancy in CdZnTe Crystal by Positron Annihilation Technology


Cd vacancies in cadmium zinc telluride(CdZnTe) crystals have an important effect on the crystal properties. In this paper, position distribution and concentration change of Cd vacancy in CdZnTe crystal grown by the temperature gradient solution growth (TGSG) were investigated by positron annihilation technology (PAT), which was based on the potential energy distribution and probability density of the positron in the crystal. The results showed that, the density of Cd vacancy increased obviously from the first-to-freeze to stable growth of the ingots, while decreased along the radial direction of the ingots. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges


After a brief review on the progresses in GaN substrates by ammonothermal method and Na-flux method and hydride vapor phase epitaxy (HVPE) technology, our research results of growing GaN thick layer by a gas flow-modulated HVPE, removing the GaN layer through an efficient self-separation process from sapphire substrate, and modifying the uniformity of multiple wafer growth are presented. The effects of surface morphology and defect behaviors on the GaN homo-epitaxial growth on free standing substrate are also discussed, and followed by the advances of LEDs on GaN substrates and prospects of their applications in solid state lighting. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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The contact and photoconductivity characteristics between Co doped amorphous carbon and GaAs: n-type low-resistivity and semi-insulated high-resistivity GaAs


The Co doped amorphous carbon films (a-C:Co), deposited by pulsed laser deposition, show p-n and ohmic contact characteristics with n-type low resistivity GaAs (L-GaAs) and semi-insulated high-resistivity GaAs (S-GaAs). The photosensitivity enhances for a-C:Co/L-GaAs, while inverse decreases for a-C:Co/S-GaAs heterojunction, respectively. Furthermore, the enhanced photosensitivity for the a-C:Co/L-GaAs/Ag heterojunction also shows deposition temperature dependence behavior, and the optimum deposition temperature is around 500 °C. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Realization and characterization of thin single crystal Ge films on sapphire


We have successfully produced and characterized thin single crystal Ge films on sapphire substrates (GeOS). Such a GeOS template offers a cost-effective alternative to bulk germanium substrates for applications where only a thin (<2 µm) Ge layer is needed for device operation. The GeOS templates have been realized using the Smart CutTM technique. 100 mm diameter GeOS templates have been manufactured and characterized to compare the Ge thin film properties with bulk Ge. Surface defect inspection, SEM, AFM, defect etching, XRD and Raman spectroscopy were all performed. The results obtained for each characterization technique used have highlighted that the material properties of the transferred thin Ge film were very close to the ones of a bulk Ge reference. An epitaxial AlGaInP/GaInP/AlGaInP double heterostructure was grown atop the GeOS template to demonstrate the template's stability under the conditions encountered in typical device realization. The photoluminescent behavior of thi...

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