Who We Are

As the lead manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconducto1
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After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool. 

In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan -CEO Of Xiamen Powerway Advanced Material Co., Ltd

Our Products

blue laser

GaN Templates

PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates, silicon carbide or silicon.PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial1

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Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

GaAs crystal

GaAs (Gallium Arsenide) Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to  polishing processing and built a 100-class clean room for 1

sic crystal

SiC Epitaxy

We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.

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SiC Substrate

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,hi1

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GaN based LED Epitaxial Wafer

PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.

gan HEMT epitaxy

GaN HEMT epitaxial wafer

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.

sic crystal

SiC Wafer Reclaim

PAM-XIAMEN is able to offer the following SiC reclaim wafer services.

Why Choose Us

  • Free And Professional Technology Support

    You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

  • Good Sales Service

    Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

  • 25+ Years Experiences

    With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

  • Reliable Quality

    Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for1

"We have been using the Powerway epi wafers for some of our work.We are very impressed with the quality of the epi"
James S.Speck, Materials Department University of California
2018-01-25
"Dear PAM-XIAMEN teams, thank you for your profession opinion, the problem was solved, we are so glad to be your partner"
Raman K. Chauhan, Seren Photonics
2018-01-25
"Thank you for quick reply of my questions and competitive price, it is very useful for us, we will order again soon"
Markus Sieger, University of Ulm
2018-01-25
"The silicon carbide wafers have arrived today,and we really pleased with them! Thumbs up to your production crew!"
Dennis, University of Exeter
2018-01-25

The World’s Most Famous Universities & Companies Trust Us

Latest News

Type-I mid-infrared InAs/InGaAs quantum well lasers on InP-based metamorphic InAlAs buffers

2018-08-14

InAs/InGaAs quantum well laser structures have been grown on InP-based metamorphic In0.8Al0.2As buffers by gas source molecular beam epitaxy. The effects of barrier and waveguide layers on the material qualities and device performances were characterized. X-ray diffraction and photoluminescence measurements prove the benefits of the strain compensation in the active quantum well region on the material quality. The device characteristics of the lasers with different waveguide layers reveal that the separate confinement heterostructure plays a crucial role on the device performances of these metamorphic lasers. Type-I emissions in the 2–3 µm range have been achieved in these InP-based metamorphic antimony-free structures. By combining the strain-compensated quantum wells and separate confinement heterostructures, the laser performances have been improved and laser emission up to 2.7 µm has been achieved. Source:IOPscience For more information, please visit our website: www.semicondu...

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Characterization of GaSb photodiode for gamma-ray detection

2018-08-10

We extract the carrier mobility-lifetime products for epitaxially grown GaSb and demonstrate the spectral response to gamma rays of a GaSb p–i–n photodiode with a 2-µm-thick absorption region. Under exposure from 55Fe and 241Am radioactive sources at 140 K, the photodiode exhibits full width at half maximum energy resolutions of 1.238 ± 0.028 and 1.789 ± 0.057 keV at 5.89 and 59.5 keV, respectively. We observe good linearity of the GaSb photodiode across a range of photon energies. The electronic noise and charge trapping noise are measured and shown to be the main components limiting the measured energy resolutions. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

2018-08-01

Heat extraction is often essential in ensuring efficient performance of semiconductor devices and requires minimising the thermal resistance between the functional semiconductor layers and any heat sink. This paper reports the epitaxial growth of N-polar GaN films on polycrystalline diamond substrates of high thermal conductivity with metal-organic vapor phase epitaxy, by using a Si x C layer formed during deposition of polycrystalline diamond on a silicon substrate. The Si x C layer acts to provide the necessary structure ordering information for the formation of a single crystal GaN film at the wafer scale. It is shown that a three-dimensional island (3D) growth process removes hexagonal defects that are induced by the non-single crystal nature of the Si x C layer. It is also shown that intensive 3D growth and the introduction of a convex curvature of the substrate can be deployed to reduce tensile stress in the GaN epitaxy to enable the growth of a crack-free layer up to a thickness...

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InAs/InSb nanowire heterostructures grown by chemical beam epitaxy

2018-07-25

We report the Au-assisted chemical beam epitaxy growth of defect-free zincblende InSb nanowires. The grown InSb segments are the upper sections of InAs/InSb heterostructures on InAs(111)B substrates. We show, through HRTEM analysis, that zincblende InSb can be grown without any crystal defects such as stacking faults or twinning planes. Strain-map analysis demonstrates that the InSb segment is nearly relaxed within a few nanometers from the interface. By post-growth studies we have found that the catalyst particle composition is AuIn2, and it can be varied to a AuIn alloy by cooling down the samples under TDMASb flux. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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Tilted angle CZT detector for photon counting/energy weighting x-ray and CT imaging

2018-07-17

X-ray imaging with a photon counting/energy weighting detector can provide the highest signal to noise ratio (SNR). Scanning slit/multi-slit x-ray image acquisition can provide a dose-efficient scatter rejection, which increases SNR. Use of a photon counting/energy weighting detector in a scanning slit/multi-slit acquisition geometry could provide highest possible dose efficiency in x-ray and CT imaging. Currently, the most advanced photon counting detector is the cadmium zinc telluride (CZT) detector, which, however, is suboptimal for energy resolved x-ray imaging. A tilted angle CZT detector is proposed in this work for applications in photon counting/energy weighting x-ray and CT imaging. In tilted angle configuration, the x-ray beam hits the surface of the linear array of CZT crystals at a small angle. This allows the use of CZT crystals of a small thickness while maintaining the high photon absorption. Small thickness CZT detectors allow for a significant decrease in the polarizat...

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Single-crystal growth and thermoelectric properties of Ge(Bi,Sb)4Te7

2018-07-12

The thermoelectric properties between 10 and 300 K and the growth of single crystals of n-type and p-type GeBi4Te7, GeSb4Te7 and Ge(Bi1−xSbx)4Te7 solid solution are reported. Single crystals were grown by the modified Bridgman method, and p-type behavior was achieved by the substitution of Bi by Sb in GeBi4Te7. The thermopower in the Ge(Bi1−xSbx)4Te7 solid solution ranges from −117 to +160 μV K−1. The crossover from n-type to p-type is continuous with increasing Sb content and is observed at x ≈0.15. The highest thermoelectric efficiencies among the tested n-type and p-type samples are ZnT = 0.11 and ZpT = 0.20, respectively. For an optimal n–p couple in this alloy system the composite figure of merit is ZnpT = 0.17 at room temperature. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net. send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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Graphene on silicon carbide can store energy

2018-07-04

The thinnest material ever produced, graphene, consists of a single layer of carbon atoms. They form a chicken-wire structure one atom thick, with unique properties. It is around 200 times stronger than steel, and highly flexible. It is transparent, but gases and liquids cannot pass through it. In addition, it is an excellent conductor of electricity. There are many ideas about how this nanomaterial can be used, and research into future applications is intense. "Graphene is fascinating, but extremely difficult to study," says Mikhail Vagin, principal research engineer at the Department of Science and Technology and the Department of Physics, Chemistry and Biology at Linköping University. One of the factors contributing to the difficulty in understanding the properties of graphene is that it is what is known as an "anisotropic" material. This means that its properties when measured on the plane surface of the carbon atom layer differ from those measured at the edges. Furthermore, attemp...

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Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition

2018-06-27

The capability of optical emission spectroscopy for in situ study and control of plasma-enhanced atomic-layer deposition (PE-ALD) of gallium phosphide from phosphine and trimethylgallium carried by hydrogen was explored. The gas composition changing during the PE-ALD process was monitored by in situ measurements of optical emission intensity for phosphine and hydrogen lines. For PE-ALD process where phosphorus and gallium deposition steps are separated in time a negative influence of excess phosphorus accumulation on the chamber walls was observed. Indeed, the phosphorus deposited on the walls during PH3 decomposition step is etched by hydrogen plasma during the next trimethylgallium decomposition step leading to uncontrollable and unwanted conventional plasma-enhanced chemical vapor deposition. To reduce this effect, it has been proposed to introduce a step of hydrogen plasma etching, which allows one to etch excess phosphorus before the beginning of gallium deposition step and achiev...

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Photoelectric properties of the undoped GaN/AlN interlayer/high purity Si(1 1 1) interface

2018-06-21

AlInN/GaN heterostructures with indium contents between 20% and 35% were grown by metal organic vapour phase epitaxy on high purity silicon (1 1 1) substrates. The samples were investigated by photovoltage (PV) spectroscopy whereby the individual layers were distinguished by their different absorption edges. The near band-edge transitions of GaN and of Si demonstrate the existence of space charge regions within the GaN layers and the Si substrate. In sandwich geometry the Si substrate significantly influences the PV spectra which are strongly quenched by additional 690 nm laser light illumination. The intensity dependence and the saturation behaviour of quenching suggest a recharging of Si- and GaN-related interface defects causing a collapse of the corresponding PV signals in the space charge region. From additional scanning surface potential microscopy measurements in bevel configuration further evidence of the existence of different space charge regions at the GaN/AlN/Si and AlInN/G...

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Lattice location determination of trace nitrogen dopants in semiconductor silicon carbide (SiC)

2018-06-12

The superconducting X-ray detector developed by AIST, used to identify N dopants at a very low concentration in SiC (left) and SC-XAFS installed at a beam line of Photon Factory, KEK (right) AIST researchers have developed an instrument for X-ray absorption fine structure (XAFS) spectroscopy equipped with a superconducting detector. With the instrument, the researchers have realized, for the first time, local structure analysis of nitrogen (N) dopants (impurity atoms at a very low concentration), which were introduced by ion plantation in silicon carbide (SiC), a wide-gap semiconductor, and are necessary for SiC to be a n-type semiconductor. Wide-gap semiconductor power devices, which enable reduction of power loss, are expected to contribute to the suppression of CO2 emissions. To produce devices using SiC, one of the typical wide-gap semiconductor materials, introduction of dopants by ion plantation is necessary for the control of electrical properties. The dopant atoms need to be lo...

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