Who We Are

As the lead manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconducto1
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After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool. 

In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan -CEO Of Xiamen Powerway Advanced Material Co., Ltd

Our Products

blue laser

GaN Templates

PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates, silicon carbide or silicon.PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial1

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Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

GaAs crystal

GaAs (Gallium Arsenide) Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to  polishing processing and built a 100-class clean room for 1

sic crystal

SiC Epitaxy

We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.

sic crystal

SiC Substrate

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,hi1

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GaN based LED Epitaxial Wafer

PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.

gan HEMT epitaxy

GaN HEMT epitaxial wafer

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.

sic crystal

SiC Wafer Reclaim

PAM-XIAMEN is able to offer the following SiC reclaim wafer services.

Why Choose Us

  • Free And Professional Technology Support

    You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

  • Good Sales Service

    Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

  • 25+ Years Experiences

    With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

  • Reliable Quality

    Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for1

"We have been using the Powerway epi wafers for some of our work.We are very impressed with the quality of the epi"
James S.Speck, Materials Department University of California
"Dear PAM-XIAMEN teams, thank you for your profession opinion, the problem was solved, we are so glad to be your partner"
Raman K. Chauhan, Seren Photonics
"Thank you for quick reply of my questions and competitive price, it is very useful for us, we will order again soon"
Markus Sieger, University of Ulm
"The silicon carbide wafers have arrived today,and we really pleased with them! Thumbs up to your production crew!"
Dennis, University of Exeter

The World’s Most Famous Universities & Companies Trust Us

Latest News

Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars


Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Shock-recovery studies on InSb single crystals up to 24 GPa


A series of shock-recovery experiments on InSb single crystals along the (100) or (111) axes up to 24 GPa were performed using flyer plate impact. The structures of recovered samples were characterized by X-ray diffraction (XRD) analysis. According to calculated peak pressures and temperatures, and phase diagram for InSb, the sample could undergo phase transitions from zinc-blende structure to high-pressure phases. However, the XRD trace of each sample corresponded to powder pattern of InSb with zinc-blende structure. The XRD trace of each sample revealed the absence of additional constituents including metastable phases and high-pressure phases of InSb except for samples shocked around 16 GPa. At 16 GPa, in addition to zinc-blende structure, additional peaks were obtained. One of these peaks may correspond to the Cmcm or Immm phase of InSb, and the other peaks were not identified. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send ...

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Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process


The integration of III–V semiconductors (e.g., GaAs and GaN) and silicon-on-insulator (SOI)-CMOS on a 200 mm Si substrate is demonstrated. The SOI-CMOS donor wafer is temporarily bonded on a Si handle wafer and thinned down. A second GaAs/Ge/Si substrate is then bonded to the SOI-CMOS-containing handle wafer. After that, the Si from the GaAs/Ge/Si substrate is removed. The GaN/Si substrate is then bonded to the SOI–GaAs/Ge-containing handle wafer. Finally, the handle wafer is released to realize the SOI–GaAs/Ge/GaN/Si hybrid structure on a Si substrate. By this method, the functionalities of the materials used can be combined on a single Si platform. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Highly doped p-type 3C–SiC on 6H–SiC substrates


Highly doped p-3C–SiC layers of good crystal perfection have been grown by sublimation epitaxy in vacuum. Analysis of the photoluminescence spectra and temperature dependence of the carrier concentration shows that at least two types of acceptor centers at ~EV + 0.25 eV and at EV + 0.06–0.07 eV exist in the samples studied. A conclusion is reached that layers of this kind can be used as p-emitters in 3C–SiC devices. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Photo-induced currents in CdZnTe crystals as a function of illumination wavelength


We report variations in the currents of CdZnTe semiconductor crystals during exposure to a series of light emitting diodes of various wavelengths ranging from 470 to 950 nm. The changes in the steady-state current of one CdZnTe crystal with and without illumination along with the time dependence of the illumination effects are discussed. Analysis of the de-trapping and transient bulk currents during and after optical excitation yield insight into the behaviour of charge traps within the crystal. Similar behaviour is observed for illumination of a second CdZnTe crystal suggesting that the overall illumination effects are not crystal dependent. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance


The electrical properties of room-temperature bonded wafers made from materials with different lattice constants, such as p-GaAs and n-Si, p-GaAs and n-Si [both with an indium tin oxide (ITO) surface layer], and n-GaN and p-GaAs, were investigated. The bonded p-GaAs//n-Si sample exhibited an electrical interface resistance of 2.8 × 10−1 Ωcm2 and showed ohmic-like characteristics. In contrast, the bonded p-GaAs/ITO//ITO/n-Si sample showed Schottky-like characteristics. The bonded n-GaN//p-GaAs wafer sample exhibited ohmic-like characteristics with an interface resistance of 2.7 Ωcm2. To our knowledge, this is the first reported instance of a bonded GaN//GaAs wafer with a low electrical resistance. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Epitaxial growth of Bi2Se3 layers on InP substrates by hot wall epitaxy


The a-axis lattice parameter of Bi2Se3 is almost identical to the lattice periodicity of the InP (1 1 1) surface. We consequently obtain remarkably smooth Bi2Se3 (0 0 0 1) layers in hot-wall-epitaxy growth on InP (1 1 1)B substrates. The lattice-matched periodicity is preserved in the [1 1 0] and [] directions of the (0 0 1) surface. The Bi2Se3 layers grown on InP (0 0 1) substrates exhibit 12-fold in-plane symmetry as the [] direction of Bi2Se3 is aligned to either of the two directions. When the (1 1 1)-oriented InP substrates are inclined, the Bi2Se3 (0 0 0 1) layers are found to develop steps having a height of ~50 nm. The tilting of the Bi2Se3 [0 0 0 1] axis with respect to the growth surface is responsible for the creation of the steps. Epitaxial growth is thus evidenced to take place rather than van der Waals growth. We point out its implications on the surface states of topological insulators. Source:IOPscience For more information, please vis...

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Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate


We report on a type-II InAs/GaSb strained layer superlattice (SLS) photodetector (λ_{\rm cut\hbox{-}off}  ~4.3 µm at 77 K) with nBn design grown on a GaAs substrate using interfacial misfit dislocation arrays to minimize threading dislocations in the active region. At 77 K and 0.1 V of the applied bias, the dark current density was equal to 6 × 10−4 A cm−2 and the maximum specific detectivity D* was estimated to 1.2 × 1011 Jones (at 0 V). At 293 K, the zero-bias D* was found to be ~109 Jones which is comparable to the nBn InAs/GaSb SLS detector grown on the GaSb substrate. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Overview of recent direct wafer bonding advances and applications


Direct wafer bonding processes are being increasingly used to achieve innovative stacking structures. Many of them have already been implemented in industrial applications. This article looks at direct bonding mechanisms, processes developed recently and trends. Homogeneous and heterogeneous bonded structures have been successfully achieved with various materials. Active, insulating or conductive materials have been widely investigated. This article gives an overview of Si and SiO2 direct wafer bonding processes and mechanisms, silicon-on-insulator type bonding, diverse material stacking and the transfer of devices. Direct bonding clearly enables the emergence and development of new applications, such as for microelectronics, microtechnologies, sensors, MEMs, optical devices, biotechnologies and 3D integration. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@g...

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Japanese Journal of Applied Physics logo A Novel Diffusion Resistant P-Base Region Implantation for Accumulation Mode 4H–SiC Epi-Channel Field Effect Transistor


A novel implantation technique using the carbon (C) and boron (B) sequential implantation is employed to control the B lateral and vertical diffusion from the p-base region of the planar silicon carbide (SiC) epi-channel field effect transistor (ECFET). The current deep level transient spectroscopy measurements were performed to establish the inter-correlation between the B enhanced diffusion and the electrically active defects introduced by the C and B sequential implantation. It was found that the formation of deep defect level is completely suppressed for the same ratio (C:B=10:1) as that for the B diffusion in 4H–SiC. A diffusion mechanism which is correlated to the formation of D center was proposed to account for the experimentally observed B enhanced diffusion. The effectiveness of C and B implantation technique in suppressing the junction field effect transistor (JFET) pinch effect is clearly visible from the 3–4 fold increase in drain current of fabricated 4H–SiC ECFET for p-b...

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