Who We Are

As the lead manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconducto1
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After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool. 

In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan -CEO Of Xiamen Powerway Advanced Material Co., Ltd

Our Products

blue laser

GaN Templates

PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates, silicon carbide or silicon.PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial1

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Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

GaAs crystal

GaAs (Gallium Arsenide) Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to  polishing processing and built a 100-class clean room for 1

sic crystal

SiC Epitaxy

We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.

sic crystal

SiC Substrate

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,hi1

gan expitaxy

GaN based LED Epitaxial Wafer

PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.

gan HEMT epitaxy

GaN HEMT epitaxial wafer

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.

sic crystal

SiC Wafer Reclaim

PAM-XIAMEN is able to offer the following SiC reclaim wafer services.

Why Choose Us

  • Good Sales Service

    Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

  • 25+ Years Experiences

    With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

  • Reliable Quality

    Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for1

  • Free And Professional Technology Support

    You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

"The silicon carbide wafers have arrived today,and we really pleased with them! Thumbs up to your production crew!"
Dennis, University of Exeter
"Thank you for quick reply of my questions and competitive price, it is very useful for us, we will order again soon"
Markus Sieger, University of Ulm
"Dear PAM-XIAMEN teams, thank you for your profession opinion, the problem was solved, we are so glad to be your partner"
Raman K. Chauhan, Seren Photonics
"We have been using the Powerway epi wafers for some of our work.We are very impressed with the quality of the epi"
James S.Speck, Materials Department University of California

The World’s Most Famous Universities & Companies Trust Us

Latest News

Growth of 3C–SiC films on Si substrates by vapor–liquid–solid tri-phase epitaxy


Cubic SiC films (3C–SiC) were deposited on (111) Si substrates by a vapor–liquid–solid tri-phase growth method. In such a process a thin copper layer, which was evaporated on the Si substrate prior to the growth, was melted at high temperature as the flux and then methane (carbon source) was diffused into the liquid layer to react with Si, leading to the growth of SiC on the substrate. Copper showed some good properties as the flux, including high silicon and carbon solubility, low growth temperature and low volatility. Suitable growth parameters to go with the copper flux were identified, under which (111) textured 3C–SiC films were grown. Small numbers of (220) grains were observed to embed in the (111) films, which were difficult to avoid completely. Etching pits of the Cu melt on the substrate surface may act as the preferred sites for the growth of (220) grains. Keywords D. SiC;  Liquid phase epitaxy;  Thin film Source:Sciencedirect For more information, please visit our...

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Time integrated optical emission studies of the laser produced germanium plasma


We present new time integrated data on the optical emission spectra of laser produced germanium plasma using a Q-switched Nd:YAG laser (1064 nm), power density up to about 5  ×  109 W cm−2 in conjunction with a set of five spectrometers covering a spectral range from 200 nm to 720 nm. Well resolved structure due to the 4p5s  →  4p2 transition array of neutral germanium and a few multiplets of singly ionized germanium have been observed. Plasma temperature has been determined in the range (9000–11 000) K using four different techniques; two line ratio method, Boltzmann plot, Saha–Boltzmann plot and Marotta's technique whereas electron density has been deduced from the Stark broadened line profiles in the range (0.5–5.0)  ×  1017 cm−3, depending on the laser pulse energy to produce the germanium plasma. Full width at half maximum (FWHM) of a number of neutral and singly ionized germanium lines have been extracted by the Lorentzian fit to the experimentally observed line profiles. In addi...

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THz Generation Process in LT-GaAs


THz Generation Process in LT-GaAs Optical down-conversion is the most successful commercial technique for THz generation using Low temperature grown GaAs (LT-GaAs). The technique is often known as Terahertz Time-Domain Spectroscopy (THz-TDS). This technique works by optical pulse excitation of a photoconductive switch. Here, a femtosecond laser pulse illuminates a gap between two electrodes (or antenna) printed on a semiconductor substrate, see figure 1. The laser pulse creates electrons and holes which are then accelerated by the applied bias between the electrodes, this transient photocurrent, which is coupled to an antenna, contains frequency components that reflect the pulse duration, hence generating an electromagnetic wave containing THz components. In a THz-TDS setup, the THz radiation is detected using a receiver device which is identical to the photoconductive switch emitter, and it is gated by the same optical pulse. For Figure 1, please click below: The main reason behind us...

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The AlGaN/GaN Power FET on Silicon Substrate


The AlGaN/GaN power FET is an aluminum gallium nitride (AlGaN)/gallium nitride (GaN) field effect transistor (FET) fabricated on an inexpensive silicon. The transistor uses Panasonic's own crystal growing technology and GaN materials that have over 10 times the breakdown voltage and below 1/5 lower resistance of existing silicon (Si). As a result, it has achieved a 350 V breakdown voltage, same as Si power metal-oxide-semiconductors (MOS), a very low specific on-state resistance of 1.9 m Ohm cm2 (below 1/10 of Si power MOS), and high-speed power switching of less than 0.1 nanosecond (below 1/100 of Si power MOS). The transistor also has a current handling capability of 150 A (over five times that of Si power MOS). Just one of these new transistors can substitute more than 10 parallel-connecting Si power MOSFETs, contributing significantly to power savings and miniaturization of electronic products. By adopting silicon substrates, the material cost is drastically reduced to less than 1/...

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Optical characterization of InAs film grown on SnO2 substrate by the electrodeposition technique


Indium arsenide films have been grown by an electrodeposition process at low temperature on a tin oxide (SnO2) substrate. X-ray diffraction studies showed that the as-grown films are poorly crystallized and heat treatment improved the crystallinity of InAs films. Atomic force microscopic measurements revealed that the InAs film surface is formed by particles for which the grain size depends on the electrolysis parameters; we have found that the grain size increases with the electrolysis current density. Absorption measurements show that the band gap energy red-shifts with increasing particle size. This result can be interpreted as a consequence of the quantum confinement effect on the carriers in the nanocrystallites. Source:IOPscience For more information, please visit our website: http://www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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PAM-XIAMEN Offers AlGaInAs epitaxial wafer for Laser diode


Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of Laser diode epitaxial structure and other related products and services announced the new availability of size 3”  is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN's product line. Dr. Shaka, said, "We are pleased to offer Laser diode epitaxial structure to our customers including many who are developing better and more reliable for DPSS laser. Our Laser diode epitaxial structure has excellent properties, tailored doping profile for low absorpton losses and highpower single mode operation, optimized active region for 100% internal quantum efficiency, special broad waveguide (BWG) design for high power operation and/or low emission divergence for effective fiber coupling. The availability improve boule growth and wafering processes." and "Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our Lase...

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Why Cree Will Continue Growing Its LED Market Share


Cree (NASDAQ:CREE) is a leading innovator of lighting-class light emitting diodes (LEDs), LED lighting and semiconductor solutions for wireless and power applications. The company is committed to drive LED adoption by optimizing performance and shrinking the gap between LED lighting and conventional technology. Cree currently accounts for 7.7% of the global LED market, but we estimate its share to rise to over 10% over our review period. A surplus in LED supply led by Chinese manufacturers and a consequent decline in prices are key trends currently plaguing the LED industry. However, witnessing an increase in orders for all its business divisions, Cree claims that the LED market dynamics are improving. LEDs require significantly lower energy and maintenance costs compared to traditional lighting sources. Historically, the LED market has grown at a CAGR of 21% from 2007 to 2008, whereas Cree’s revenue witnessed a CAGR of 25%. We estimate the global LED market to grow at a CAGR of 9% unt...

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Analyses of Five Major LED Manufacturers Vertical Integration Strategies (Part 1)


Upheld as the classical business models in the LED industry, Dutch lighting giant Philips and leading German lighting manufacturer Osram business models have been the most discussed among market insiders. The two European companies vertical integration models are considered textbook cases in the industry. In contrast, many Chinese manufacturers have adopted a strategy of diversification in the industry, with the exception of ETI that has been diligently following the vertical integration creed. Since absorbing Guangdong Jiang Longda (健隆達) in 2009, through various investments ETI has been able to gradually piece together its missing links throughout the LED supply chain. The company has become a fully vertically integrated company with a comprehensive supply chain incorporating LED chips, LED packages and lighting products. For many years, vertical integration and diversification were two parallel business models in the LED industry. Yet, in 2015 companies previously focused in the LED ...

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Analyses of Five Major LED Manufacturers Vertical Integration Strategies (Part 2)


In part one of these series, LEDinside explored Philips, Osram and Cree’s vertical integration strategies. In the second part of this series we will take a closer look at major Chinese LED companies MLS and Elech-Tech International’s (ETI) vertical integration strategies. Why is MLS expanding its lighting business after becoming the largest LED packager in China? On February 17, 2015, MLS was officially approved by Shenzhen A share, and its market capitalization skyrocketed to RMB 30 billion (US $4.64 billion), making it one of the most valuable companies in the LED package sector. MSL’s huge revenue scale is the main reason of its surging market cap and by 2014 the company’s revenue exceeded a record RMB 4 billion (US $619 million). Compared to several other Chinese package manufacturers that entered the market at the same time, such as Nationstar, Refond Opto and Hongliopto, MLS has been expanding at an astounding pace. The difference among these Chinese manufacturers was insignifica...

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InGaAs Structure Wafer


Indium gallium arsenide (InGaAs), also called gallium indium arsenide, is a common name for a family of chemical compounds of three chemical elements, indium, gallium, and arsenic. Indium and gallium are both boron group elements, often called "group III", while arsenic is a pnictogen or "group V" element. In semiconductor physics, compounds of elements in these groups are often called "III-V" compounds. Because they belong to the same group, indium and gallium play similar roles in chemical bonding, and InGaAs is often regarded as an alloy of gallium arsenide and indium arsenide, with its properties being intermediate between the two and depending on the proportion of gallium to indium. Under typical conditions, InGaAs is a semiconductor, and it is especially significant in optoelectronics technology, for which reason it has been extensively studied. Currently we can offer  new 2" InGaAs structure wafer as follows: Structure1: n++ InGaAs (~ 30 nm) (5×1019 cm-3, higher is better) ...

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