Who We Are

As the lead manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconducto1
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After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool. 

In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan -CEO Of Xiamen Powerway Advanced Material Co., Ltd

Our Products

blue laser

GaN Templates

PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates, silicon carbide or silicon.PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial1

gan on silicon

Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

GaAs crystal

GaAs (Gallium Arsenide) Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to  polishing processing and built a 100-class clean room for 1

sic crystal

SiC Epitaxy

We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.

sic crystal

SiC Substrate

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,hi1

gan expitaxy

GaN based LED Epitaxial Wafer

PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.

gan HEMT epitaxy

GaN HEMT epitaxial wafer

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.

sic crystal

SiC Wafer Reclaim

PAM-XIAMEN is able to offer the following SiC reclaim wafer services.

Why Choose Us

  • Free And Professional Technology Support

    You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

  • Reliable Quality

    Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for1

  • 25+ Years Experiences

    With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

  • Good Sales Service

    Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

"The silicon carbide wafers have arrived today,and we really pleased with them! Thumbs up to your production crew!"
Dennis, University of Exeter
2018-01-09
"Thank you for quick reply of my questions and competitive price, it is very useful for us, we will order again soon"
Markus Sieger, University of Ulm
2017-11-02
"Dear PAM-XIAMEN teams, thank you for your profession opinion, the problem was solved, we are so glad to be your partner"
Raman K. Chauhan, Seren Photonics
2016-04-13
"We have been using the Powerway epi wafers for some of our work.We are very impressed with the quality of the epi"
James S.Speck, Materials Department University of California
2015-09-10

The World’s Most Famous Universities & Companies Trust Us

Latest News

Growth of 3C–SiC films on Si substrates by vapor–liquid–solid tri-phase epitaxy

2018-10-13

Cubic SiC films (3C–SiC) were deposited on (111) Si substrates by a vapor–liquid–solid tri-phase growth method. In such a process a thin copper layer, which was evaporated on the Si substrate prior to the growth, was melted at high temperature as the flux and then methane (carbon source) was diffused into the liquid layer to react with Si, leading to the growth of SiC on the substrate. Copper showed some good properties as the flux, including high silicon and carbon solubility, low growth temperature and low volatility. Suitable growth parameters to go with the copper flux were identified, under which (111) textured 3C–SiC films were grown. Small numbers of (220) grains were observed to embed in the (111) films, which were difficult to avoid completely. Etching pits of the Cu melt on the substrate surface may act as the preferred sites for the growth of (220) grains. Keywords D. SiC;  Liquid phase epitaxy;  Thin film Source:Sciencedirect For more information, please visit our...

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Time integrated optical emission studies of the laser produced germanium plasma

2018-09-17

We present new time integrated data on the optical emission spectra of laser produced germanium plasma using a Q-switched Nd:YAG laser (1064 nm), power density up to about 5  ×  109 W cm−2 in conjunction with a set of five spectrometers covering a spectral range from 200 nm to 720 nm. Well resolved structure due to the 4p5s  →  4p2 transition array of neutral germanium and a few multiplets of singly ionized germanium have been observed. Plasma temperature has been determined in the range (9000–11 000) K using four different techniques; two line ratio method, Boltzmann plot, Saha–Boltzmann plot and Marotta's technique whereas electron density has been deduced from the Stark broadened line profiles in the range (0.5–5.0)  ×  1017 cm−3, depending on the laser pulse energy to produce the germanium plasma. Full width at half maximum (FWHM) of a number of neutral and singly ionized germanium lines have been extracted by the Lorentzian fit to the experimentally observed line profiles. In addi...

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SiC Crystal

2018-04-25

What we provide:

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Detail Application of Silicon Carbide

2018-04-25

Detail Application of Silicon Carbide Because of SiC physical and electronic properties,silicon carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device. Many researchers know the general SiC application:III-V Nitride Deposition;Optoelectronic Devices;High Power Devices;High Temperature Devices;High Frequency Power Devices.But few people knows detail applications, here we list some detail application and make some explanations: 1.SiC substrate for X-ray monochromators: such as using SiC's large d-spacing of about 15 A 2.SiC substrate for high voltage devices 3.SiC substrate for diamond film growth by microwave plasma-enhanced chemical vapor deposition 4.For silicon carbide p-n diode 5.SiC substrate for optical window: such as for very short (< 100 fs) and intense (> 100 GW/cm2) laser pulses with a wavelength of 1300 nm. It should have a...

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Crystal wafer

2018-04-25

Crystal wafer(SiC wafer,gan wafer,gaas wafer,ge wafer,CZT wafer,AlN wafer,Si wafer) A wafer, also called a slice or substrate, is a thin slice of semiconductor material, such as a crystalline silicon, used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells. The wafer serves as the substrate for microelectronic devices built in and over the wafer and undergoes many microfabrication process steps such as doping or ion implantation, etching, deposition of various materials, and photolithographic patterning. Finally the individual microcircuits are separated (dicing) and packaged. XiamenPowerway Advanced Material Co.,Ltd offers wide range crystal wafer as follows: 1)SiC crystal wafer:2”,3”,4” Orientation :0°/4°±0.5° Single Crystal 4H/6H Thickness: (250 ± 25) μm, (330 ± 25) μm,(430 ± 25) μm Type:N/SI Dopant:Nitrogen/V Resistivity (RT): 0.02 ~ 0.1 Ω·cm/>1E5 Ω·cm FWHM: A<30 arcsec B/C/D <50 arcsec Packaging:Single ...

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Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling

2018-04-19

On the base of the physical analytical models based on Poisson's equation, drift–diffusion and continuity equations the forward current–voltage characteristics of 6H-SiC and 4H-SiC type Schottky diode with Ni and Ti Schottky contact have been simulated. It is shown on the base of analysis of current–voltage characteristics in terms of classical thermionic emission theory it is shown that the proposed simulation model of Schottky diode corresponds to the almost "ideal" diode with ideality factor n equals 1.1. Because of this it is determined that the effective Schottky barrier height phivB equals 1.57 eV and 1.17 eV for Ni/6H and Ti/4H silicon carbide Schottky diode type, respectively. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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Molecular beam epitaxy growth of germanium junctions for multi-junction solar cell applications

2018-04-13

We report on the molecular beam epitaxy (MBE) growth and device characteristics of Ge solar cells. Integrating a Ge bottom cell beneath a lattice-matched triple junction stack grown by MBE could enable ultra-high efficiencies without metamorphic growth or wafer bonding. However, a diffused junction cannot be readily formed in Ge by MBE due to the low sticking coefficient of group-V molecules on Ge surfaces. We therefore realized Ge junctions by growth of homo-epitaxial n-Ge on p-Ge wafers within a standard III–V MBE system. We then fabricated Ge solar cells, finding growth temperature and post-growth annealing to be key factors for achieving high efficiency. Open-circuit voltage and fill factor values of ~0.175 V and ~0.59 without a window layer were obtained, both of which are comparable to diffused Ge junctions formed by metal-organic vapor phase epitaxy. We also demonstrate growth of high-quality, single-domain GaAs on the Ge junction, as needed for subsequent growth of III–V subcel...

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Comb-drive GaN micro-mirror on a GaN-on-silicon platform

2018-04-02

We report here a double-sided process for the fabrication of a comb-drive GaN micro-mirror on a GaN-on-silicon platform. A silicon substrate is first patterned from the backside and removed by deep reactive ion etching, resulting in totally suspended GaN slabs. GaN microstructures including the torsion bars, movable combs and mirror plate are then defined on a freestanding GaN slab by the backside alignment technique and generated by fast atom beam etching with Cl2 gas. Although the fabricated comb-drive GaN micro-mirrors are deflected by the residual stress in GaN thin films, they can operate on a high resistivity silicon substrate without introducing any additional isolation layer. The optical rotation angles are experimentally characterized in the rotation experiments. This work opens the possibility of producing GaN optical micro-electro-mechanical-system (MEMS) devices on a GaN-on-silicon platform. Source:IOPscience For more information, please visit our website: www.semiconductor...

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PAM-XIAMEN Offers Epi service for GaAs-based laser wafers growth

2018-03-21

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of Epi service for GaAs-based laser wafers growth and other related products and services announced the new availability of size  3”  is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN's product line. Dr. Shaka, said, "We are pleased to offer Quantum Well Laser Structure to our customers including many who are developing better and more reliable for the basic active element (laser light source) of the Internet fiber optic communication. Our Laser diode epitaxial structure has excellent properties, quantum well lasers bases on gallium arsenide and indium phosphide wafers, lasers utilizing quantum wells and the discrete electron modes are fabricated by both MOVPE and MBE techniques, are produced at a variety of wavelengths from the ultraviolet to the THz regime. The shortest wavelength lasers rely on gallium nitride-based materials. The longest wavelength lasers rely on the q...

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THz Generation Process in LT-GaAs

2018-03-13

THz Generation Process in LT-GaAs Optical down-conversion is the most successful commercial technique for THz generation using Low temperature grown GaAs (LT-GaAs). The technique is often known as Terahertz Time-Domain Spectroscopy (THz-TDS). This technique works by optical pulse excitation of a photoconductive switch. Here, a femtosecond laser pulse illuminates a gap between two electrodes (or antenna) printed on a semiconductor substrate, see figure 1. The laser pulse creates electrons and holes which are then accelerated by the applied bias between the electrodes, this transient photocurrent, which is coupled to an antenna, contains frequency components that reflect the pulse duration, hence generating an electromagnetic wave containing THz components. In a THz-TDS setup, the THz radiation is detected using a receiver device which is identical to the photoconductive switch emitter, and it is gated by the same optical pulse. For Figure 1, please click below: The main reason behind us...

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