Who We Are

As the lead manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconducto1
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After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool. 

In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan -CEO Of Xiamen Powerway Advanced Material Co., Ltd

Our Products

blue laser

GaN Templates

PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates, silicon carbide or silicon.PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial1

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Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

GaAs crystal

GaAs (Gallium Arsenide) Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to  polishing processing and built a 100-class clean room for 1

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SiC Epitaxy

We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.

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SiC Substrate

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,hi1

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GaN based LED Epitaxial Wafer

PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.

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GaN HEMT epitaxial wafer

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.

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SiC Wafer Reclaim

PAM-XIAMEN is able to offer the following SiC reclaim wafer services.

Why Choose Us

  • Free And Professional Technology Support

    You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

  • Good Sales Service

    Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

  • 25+ Years Experiences

    With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

  • Reliable Quality

    Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for1

"We have been using the Powerway epi wafers for some of our work.We are very impressed with the quality of the epi"
James S.Speck, Materials Department University of California
2018-01-25
"Dear PAM-XIAMEN teams, thank you for your profession opinion, the problem was solved, we are so glad to be your partner"
Raman K. Chauhan, Seren Photonics
2018-01-25
"Thank you for quick reply of my questions and competitive price, it is very useful for us, we will order again soon"
Markus Sieger, University of Ulm
2018-01-25
"The silicon carbide wafers have arrived today,and we really pleased with them! Thumbs up to your production crew!"
Dennis, University of Exeter
2018-01-25

The World’s Most Famous Universities & Companies Trust Us

Latest News

Lattice location determination of trace nitrogen dopants in semiconductor silicon carbide (SiC)

2018-06-12

The superconducting X-ray detector developed by AIST, used to identify N dopants at a very low concentration in SiC (left) and SC-XAFS installed at a beam line of Photon Factory, KEK (right) AIST researchers have developed an instrument for X-ray absorption fine structure (XAFS) spectroscopy equipped with a superconducting detector. With the instrument, the researchers have realized, for the first time, local structure analysis of nitrogen (N) dopants (impurity atoms at a very low concentration), which were introduced by ion plantation in silicon carbide (SiC), a wide-gap semiconductor, and are necessary for SiC to be a n-type semiconductor. Wide-gap semiconductor power devices, which enable reduction of power loss, are expected to contribute to the suppression of CO2 emissions. To produce devices using SiC, one of the typical wide-gap semiconductor materials, introduction of dopants by ion plantation is necessary for the control of electrical properties. The dopant atoms need to be lo...

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Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs

2018-06-05

We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) in the 1.3 µm range. The epitaxial structures were grown on (1 0 0) GaAs substrates by metalorganic chemical vapour deposition (MOCVD) or molecular beam epitaxy (MBE). The nitrogen composition of the InGa(N)As/GaAs quantum-well (QW) active region is 0–0.02. The long-wavelength (up to 1.3 µm) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE- and MOCVD-grown VCSELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In0.36Ga0.64N0.006As0.994/GaAs VCSELs. A very low Jth of 2.55 kA cm−2 was obtained for the InGaNAs/GaAs VCSELs. The MBE-grown devices were made with an intracavity structure. Top-emitting multi-mode 1.3 µm In0.35Ga0.65N0.02As0.98/GaAs VCSELs with 1 mW output power have been achieved under RT CW operation. A Jth of 1.52 kA cm−2 has been obtained for the MBE-grown In0.35Ga0.6...

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Formation of Novel Silicon Nitride with Face-Centered Cubic Crystal Structure in a TaN/Ta/Si(100) Thin Film System

2018-05-29

We discovered a new silicon nitride with cubic symmetry formed in the silicon at the Ta/Si interface of the TaN/Ta/Si(100) thin film system when the silicon wafer was annealed at 500 or 600°C. The cubic silicon nitride grew into the silicon crystal in the shape of an inverse pyramid after the annealing process. The boundary planes of the inverse pyramid were the {111} planes of the silicon crystal. The orientation relationship between the silicon nitride and silicon crystal is cubic to cubic. The lattice constant of the new silicon nitride is a=0.5548 nm and is about 2.2% larger than that of the silicon crystal. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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Silicon carbide mirror subjected to thermal-vacuum testing

2018-05-25

Credit: ESA, CC BY-SA 3.0 IGO A strong but lightweight mirror for space, made from silicon carbide ceramic, is being subjected to the temperature levels and vacuum encountered in orbit. The 95 cm-diameter mirror consists of three separate petals fused together ahead of grinding and polishing. The aim of the test, led for ESA by AMOS in Belgium, was to check if the combination of joints would induce optical distortion when the mirror's temperature was brought close to –150°C. A compound of silicon and carbon, SiC was first synthesised in 1893 in an attempt to make artificial diamonds. The result was not so far off: today, SiC is one of the hardest-known materials, used to make cutting tools, high-performance brakes and even bulletproof vests. Crystalline in nature, it is also used for jewellery. Small amounts of SiC have been unearthed inside meteorites – it is relatively common in deep space. Its strong, lightweight nature made it a natural for human-made space projects too. ESA produc...

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PAM-XIAMEN Offers GaAs LED wafer

2018-05-14

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAs epi wafer and other related products and services announced the new availability of size 2”&4”  is on mass production in 2010. This new product represents a natural addition to PAM-XIAMEN's product line. Dr. Shaka, said, "We are pleased to offer GaAs LED epi wafer to our customers including many who are developing better and more reliable for Red Led. It includes algainp led structure with multi quantum well,including DBR layer for LED chip industry, wavelength range from 620nm to 780nm by MOCVD. Therein, AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers.The availability improve boule growth and wafering processes." and "Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our led epitaxy ...

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Modulated doping improves GaN-based vertical-cavity surface-emitting lasers

2018-05-08

Schematic of a 10-pair Si-doped AlInN/GaN DBR structure for vertical current injection and (b) a Si-doping profile in a pair of AlInN/GaN layers. Credit: Japan Society of Applied Physics (JSAP) Researchers at Meijo University and Nagoya University in Japan demonstrated a design of GaN-based vertical-cavity surface-emitting lasers (VCSELs) that provides good electrical conductivity and is readily grown. The findings are reported in Applied Physics Express. This research is featured in the November 2016 issue of the online JSAP Bulletin. "GaN-based vertical-cavity surface-emitting lasers (VCSELs) are expected to be adopted in various applications, such as retinal scanning displays, adaptive headlights, and high-speed visible-light communication systems," explain Tetsuya Takeuchi and colleagues at Meijo University and Nagoya University in Japan in their latest report. However, so far, the structures designed for commercialising these devices have poor conducting properties, and existing a...

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PAM-XIAMEN Offers High Purity Semi-Insulating SiC substrate

2018-05-02

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of High Purity Semi-Insulating SiC substrate and other related products and services announced the new availability of size 2”&3”&4”  is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN's product line. Dr. Shaka, said, "We are pleased to offer High Purity Semi-Insulating SiC substrate to our customers. 4H Semi-Insulating Silicon Carbide (SiC) substrates that are available in on-axis orientation. The unique HTCVD crystal growth technology is the key enabler to purer products combining high and uniform resistivity with a very low defect density. The availability improve boule growth and wafering processes." and "Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our High Purity Semi-Insulating SiC substrate are natural by products of our ongoing efforts, currently we are devoted to continuously ...

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Comb-drive GaN micro-mirror on a GaN-on-silicon platform

2018-04-02

We report here a double-sided process for the fabrication of a comb-drive GaN micro-mirror on a GaN-on-silicon platform. A silicon substrate is first patterned from the backside and removed by deep reactive ion etching, resulting in totally suspended GaN slabs. GaN microstructures including the torsion bars, movable combs and mirror plate are then defined on a freestanding GaN slab by the backside alignment technique and generated by fast atom beam etching with Cl2 gas. Although the fabricated comb-drive GaN micro-mirrors are deflected by the residual stress in GaN thin films, they can operate on a high resistivity silicon substrate without introducing any additional isolation layer. The optical rotation angles are experimentally characterized in the rotation experiments. This work opens the possibility of producing GaN optical micro-electro-mechanical-system (MEMS) devices on a GaN-on-silicon platform. Source:IOPscience For more information, please visit our website: www.semiconductor...

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3.0 MeV proton-irradiation induced non-radiative recombination center in the GaAs middle cell and the GaInP top cell of triple-junction solar cells

2018-04-26

3.0 MeV proton-irradiation effects on the GaAs middle cell and the GaInP top cell of n+-p GaInP/GaAs/Ge triple-junction (3J) solar cells have been analyzed using temperature-dependent photoluminescence (PL) technique. The E5 (Ec - 0.96 eV) electron trap in the GaAs middle cell, the H2 (Ev + 0.55 eV) hole trap in the GaInP top cell are identified as the proton irradiation-induced non-radiative recombination centers, respectively, causing the performance degradation of the triple-junction solar cells. The GaAs middle cell is less resistant to proton irradiation than the GaInP top cell. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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SiC Crystal

2018-04-25

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