Who We Are

As the lead manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconducto1
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After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool. 

In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan -CEO Of Xiamen Powerway Advanced Material Co., Ltd

Our Products

blue laser

GaN Templates

PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates, silicon carbide or silicon.PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial1

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Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

GaAs crystal

GaAs (Gallium Arsenide) Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to  polishing processing and built a 100-class clean room for 1

sic crystal

SiC Epitaxy

We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.

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SiC Substrate

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,hi1

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GaN based LED Epitaxial Wafer

PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.

gan HEMT epitaxy

GaN HEMT epitaxial wafer

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.

sic crystal

SiC Wafer Reclaim

PAM-XIAMEN is able to offer the following SiC reclaim wafer services.

Why Choose Us

  • Free And Professional Technology Support

    You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

  • Good Sales Service

    Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

  • 25+ Years Experiences

    With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

  • Reliable Quality

    Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for1

"We have been using the Powerway epi wafers for some of our work.We are very impressed with the quality of the epi"
James S.Speck, Materials Department University of California
2018-01-25
"Dear PAM-XIAMEN teams, thank you for your profession opinion, the problem was solved, we are so glad to be your partner"
Raman K. Chauhan, Seren Photonics
2018-01-25
"Thank you for quick reply of my questions and competitive price, it is very useful for us, we will order again soon"
Markus Sieger, University of Ulm
2018-01-25
"The silicon carbide wafers have arrived today,and we really pleased with them! Thumbs up to your production crew!"
Dennis, University of Exeter
2018-01-25

The World’s Most Famous Universities & Companies Trust Us

Latest News

Tilted angle CZT detector for photon counting/energy weighting x-ray and CT imaging

2018-07-17

X-ray imaging with a photon counting/energy weighting detector can provide the highest signal to noise ratio (SNR). Scanning slit/multi-slit x-ray image acquisition can provide a dose-efficient scatter rejection, which increases SNR. Use of a photon counting/energy weighting detector in a scanning slit/multi-slit acquisition geometry could provide highest possible dose efficiency in x-ray and CT imaging. Currently, the most advanced photon counting detector is the cadmium zinc telluride (CZT) detector, which, however, is suboptimal for energy resolved x-ray imaging. A tilted angle CZT detector is proposed in this work for applications in photon counting/energy weighting x-ray and CT imaging. In tilted angle configuration, the x-ray beam hits the surface of the linear array of CZT crystals at a small angle. This allows the use of CZT crystals of a small thickness while maintaining the high photon absorption. Small thickness CZT detectors allow for a significant decrease in the polarizat...

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Single-crystal growth and thermoelectric properties of Ge(Bi,Sb)4Te7

2018-07-12

The thermoelectric properties between 10 and 300 K and the growth of single crystals of n-type and p-type GeBi4Te7, GeSb4Te7 and Ge(Bi1−xSbx)4Te7 solid solution are reported. Single crystals were grown by the modified Bridgman method, and p-type behavior was achieved by the substitution of Bi by Sb in GeBi4Te7. The thermopower in the Ge(Bi1−xSbx)4Te7 solid solution ranges from −117 to +160 μV K−1. The crossover from n-type to p-type is continuous with increasing Sb content and is observed at x ≈0.15. The highest thermoelectric efficiencies among the tested n-type and p-type samples are ZnT = 0.11 and ZpT = 0.20, respectively. For an optimal n–p couple in this alloy system the composite figure of merit is ZnpT = 0.17 at room temperature. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net. send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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Graphene on silicon carbide can store energy

2018-07-04

The thinnest material ever produced, graphene, consists of a single layer of carbon atoms. They form a chicken-wire structure one atom thick, with unique properties. It is around 200 times stronger than steel, and highly flexible. It is transparent, but gases and liquids cannot pass through it. In addition, it is an excellent conductor of electricity. There are many ideas about how this nanomaterial can be used, and research into future applications is intense. "Graphene is fascinating, but extremely difficult to study," says Mikhail Vagin, principal research engineer at the Department of Science and Technology and the Department of Physics, Chemistry and Biology at Linköping University. One of the factors contributing to the difficulty in understanding the properties of graphene is that it is what is known as an "anisotropic" material. This means that its properties when measured on the plane surface of the carbon atom layer differ from those measured at the edges. Furthermore, attemp...

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Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition

2018-06-27

The capability of optical emission spectroscopy for in situ study and control of plasma-enhanced atomic-layer deposition (PE-ALD) of gallium phosphide from phosphine and trimethylgallium carried by hydrogen was explored. The gas composition changing during the PE-ALD process was monitored by in situ measurements of optical emission intensity for phosphine and hydrogen lines. For PE-ALD process where phosphorus and gallium deposition steps are separated in time a negative influence of excess phosphorus accumulation on the chamber walls was observed. Indeed, the phosphorus deposited on the walls during PH3 decomposition step is etched by hydrogen plasma during the next trimethylgallium decomposition step leading to uncontrollable and unwanted conventional plasma-enhanced chemical vapor deposition. To reduce this effect, it has been proposed to introduce a step of hydrogen plasma etching, which allows one to etch excess phosphorus before the beginning of gallium deposition step and achiev...

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Photoelectric properties of the undoped GaN/AlN interlayer/high purity Si(1 1 1) interface

2018-06-21

AlInN/GaN heterostructures with indium contents between 20% and 35% were grown by metal organic vapour phase epitaxy on high purity silicon (1 1 1) substrates. The samples were investigated by photovoltage (PV) spectroscopy whereby the individual layers were distinguished by their different absorption edges. The near band-edge transitions of GaN and of Si demonstrate the existence of space charge regions within the GaN layers and the Si substrate. In sandwich geometry the Si substrate significantly influences the PV spectra which are strongly quenched by additional 690 nm laser light illumination. The intensity dependence and the saturation behaviour of quenching suggest a recharging of Si- and GaN-related interface defects causing a collapse of the corresponding PV signals in the space charge region. From additional scanning surface potential microscopy measurements in bevel configuration further evidence of the existence of different space charge regions at the GaN/AlN/Si and AlInN/G...

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Lattice location determination of trace nitrogen dopants in semiconductor silicon carbide (SiC)

2018-06-12

The superconducting X-ray detector developed by AIST, used to identify N dopants at a very low concentration in SiC (left) and SC-XAFS installed at a beam line of Photon Factory, KEK (right) AIST researchers have developed an instrument for X-ray absorption fine structure (XAFS) spectroscopy equipped with a superconducting detector. With the instrument, the researchers have realized, for the first time, local structure analysis of nitrogen (N) dopants (impurity atoms at a very low concentration), which were introduced by ion plantation in silicon carbide (SiC), a wide-gap semiconductor, and are necessary for SiC to be a n-type semiconductor. Wide-gap semiconductor power devices, which enable reduction of power loss, are expected to contribute to the suppression of CO2 emissions. To produce devices using SiC, one of the typical wide-gap semiconductor materials, introduction of dopants by ion plantation is necessary for the control of electrical properties. The dopant atoms need to be lo...

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Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs

2018-06-05

We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) in the 1.3 µm range. The epitaxial structures were grown on (1 0 0) GaAs substrates by metalorganic chemical vapour deposition (MOCVD) or molecular beam epitaxy (MBE). The nitrogen composition of the InGa(N)As/GaAs quantum-well (QW) active region is 0–0.02. The long-wavelength (up to 1.3 µm) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE- and MOCVD-grown VCSELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In0.36Ga0.64N0.006As0.994/GaAs VCSELs. A very low Jth of 2.55 kA cm−2 was obtained for the InGaNAs/GaAs VCSELs. The MBE-grown devices were made with an intracavity structure. Top-emitting multi-mode 1.3 µm In0.35Ga0.65N0.02As0.98/GaAs VCSELs with 1 mW output power have been achieved under RT CW operation. A Jth of 1.52 kA cm−2 has been obtained for the MBE-grown In0.35Ga0.6...

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Formation of Novel Silicon Nitride with Face-Centered Cubic Crystal Structure in a TaN/Ta/Si(100) Thin Film System

2018-05-29

We discovered a new silicon nitride with cubic symmetry formed in the silicon at the Ta/Si interface of the TaN/Ta/Si(100) thin film system when the silicon wafer was annealed at 500 or 600°C. The cubic silicon nitride grew into the silicon crystal in the shape of an inverse pyramid after the annealing process. The boundary planes of the inverse pyramid were the {111} planes of the silicon crystal. The orientation relationship between the silicon nitride and silicon crystal is cubic to cubic. The lattice constant of the new silicon nitride is a=0.5548 nm and is about 2.2% larger than that of the silicon crystal. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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Silicon carbide mirror subjected to thermal-vacuum testing

2018-05-25

Credit: ESA, CC BY-SA 3.0 IGO A strong but lightweight mirror for space, made from silicon carbide ceramic, is being subjected to the temperature levels and vacuum encountered in orbit. The 95 cm-diameter mirror consists of three separate petals fused together ahead of grinding and polishing. The aim of the test, led for ESA by AMOS in Belgium, was to check if the combination of joints would induce optical distortion when the mirror's temperature was brought close to –150°C. A compound of silicon and carbon, SiC was first synthesised in 1893 in an attempt to make artificial diamonds. The result was not so far off: today, SiC is one of the hardest-known materials, used to make cutting tools, high-performance brakes and even bulletproof vests. Crystalline in nature, it is also used for jewellery. Small amounts of SiC have been unearthed inside meteorites – it is relatively common in deep space. Its strong, lightweight nature made it a natural for human-made space projects too. ESA produc...

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PAM-XIAMEN Offers GaAs LED wafer

2018-05-14

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAs epi wafer and other related products and services announced the new availability of size 2”&4”  is on mass production in 2010. This new product represents a natural addition to PAM-XIAMEN's product line. Dr. Shaka, said, "We are pleased to offer GaAs LED epi wafer to our customers including many who are developing better and more reliable for Red Led. It includes algainp led structure with multi quantum well,including DBR layer for LED chip industry, wavelength range from 620nm to 780nm by MOCVD. Therein, AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers.The availability improve boule growth and wafering processes." and "Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our led epitaxy ...

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