Who We Are

As the lead manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconducto1
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After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool. 

In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan -CEO Of Xiamen Powerway Advanced Material Co., Ltd

Our Products

blue laser

GaN Templates

PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates, silicon carbide or silicon.PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial1

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Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

GaAs crystal

GaAs (Gallium Arsenide) Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to  polishing processing and built a 100-class clean room for 1

sic crystal

SiC Epitaxy

We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.

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SiC Substrate

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,hi1

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GaN based LED Epitaxial Wafer

PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.

gan HEMT epitaxy

GaN HEMT epitaxial wafer

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.

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SiC Wafer Reclaim

PAM-XIAMEN is able to offer the following SiC reclaim wafer services.

Why Choose Us

  • Free And Professional Technology Support

    You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

  • Good Sales Service

    Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

  • 25+ Years Experiences

    With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

  • Reliable Quality

    Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for1

"We have been using the Powerway epi wafers for some of our work.We are very impressed with the quality of the epi"
James S.Speck, Materials Department University of California
2018-01-25
"Dear PAM-XIAMEN teams, thank you for your profession opinion, the problem was solved, we are so glad to be your partner"
Raman K. Chauhan, Seren Photonics
2018-01-25
"Thank you for quick reply of my questions and competitive price, it is very useful for us, we will order again soon"
Markus Sieger, University of Ulm
2018-01-25
"The silicon carbide wafers have arrived today,and we really pleased with them! Thumbs up to your production crew!"
Dennis, University of Exeter
2018-01-25

The World’s Most Famous Universities & Companies Trust Us

Latest News

High Uniform Waveguide Photodiodes Fabricated on a 2-inch InP Wafer with Low Darkcurrent and High Responsivity

2018-12-04

We have fabricated waveguide photodiodes with high uniform characteristics on a 2-inch InP wafer introducing a novel process. The 2-inch wafer fabrication procedure was carried out successfully by utilizing SiNx deposition on the back of the wafer in order to compensate wafer warp. Almost all the measured waveguide photodiodes exhibited low darkcurrent (average 419 pA, σ= 49 pA at 10 V reverse bias voltage) throughout the 2-inch wafer, and high responsivity of 0.987 A/W (σ=0.011 A/W) was obtained in a consecutive 60-channel array at the input wavelength of 1.3 µm. In addition, uniformity of frequency response was also confirmed. source:iopscience For more information , please visit our website: semiconductorwafers.net Send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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Wet Chemical Surface Passivation of Germanium Wafers by Quinhydrone–Methanol Treatment for Minority Carrier Lifetime Measurements

2018-11-26

We have applied quinhydrone/methanol (Q/M) treatment to germanium (Ge) surfaces and shown that this treatment is also effective for passivating Ge surfaces for minority carrier lifetime measurements. Surface recombination velocity (S) of less than 20 cm/s has been obtained, which enables us to accurately evaluate the bulk lifetime of minority carriers, τb, in Ge wafer. To the best of our knowledge, this is the first report on wet chemical treatment successfully applied to Ge surfaces achieving low values of S. source:iopscience For more information , please visit our website: semiconductorwafers.net Send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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How will the SiC and GaN power semiconductor market develop?

2018-11-21

The Development of SiC and GaN Power Semiconductor Market The current state of SiC technology and market, and the development trend in the next few years. The SiC device market is promising. Sales of Schottky barrier diodes have matured and MOSFET shipments are expected to increase significantly over the next three years. According to Yole Développement analysts, SiC is very mature in terms of diodes, and GaN has no challenge at all for SiC MOSFETs with voltages of 1.2kV and above. GaN may compete with SiC MOSFETs in the 650V range, but SiC is more mature. It is expected that SiC sales will grow rapidly, and SiC will gain market share from the silicon power device market, and it is estimated that the compound growth rate will reach 28% in the next few years. IHS Markit believes that the SiC industry will continue to grow strongly, driven by growth in applications such as hybrid and electric vehicles, power electronics and photovoltaic inverters. SiC power devices mainly include power d...

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High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy

2018-11-14

There is a method of controlling nucleation and lateral growth using the three-dimensional (3D) and two-dimensional (2D) growth modes to reduce the dislocation density. We performed 3D–2D-AlN growth on 6H-SiC substrates to obtain high-quality and crack-free AlN layers by low-pressure hydride vapor phase epitaxy (LP-HVPE). First, we performed 3D-AlN growth directly on a 6H-SiC substrate. With increasing V/III ratio, the AlN island density decreased and the grain size increased. Second, 3D–2D-AlN layers were grown directly on a 6H-SiC substrate. With increasing the V/III ratio of 3D-AlN, the crystalline qualities of the 3D–2D-AlN layer were improved. Third, we performed 3D–2D-AlN growth on a trench-patterned 6H-SiC substrate. The crack density was reduced to relax the stress by voids. We also evaluated the threading dislocation density by using molten KOH/NaOH etching. As a result, the estimated edge dislocation density of the 3D–2D-AlN sample was 3.9 × 108 cm−2. source:iopscience For mo...

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Interfacial and mechanical characterization of wafer-bonded GaSb/amorphous α-(Ga,As)/GaAs structure for GaSb-on-insulator applications

2018-11-07

In this study, the feasibility of using wafer-bonding technology to fabricate a GaSb semiconductor on GaAs substrate for potentially creating a GaSb-on-insulator structure has been demonstrated. A GaSb wafer has been bonded on two types of GaAs substrates: (1) a regular single crystal semi-insulating GaAs substrate (2) the GaAs wafers with pre-deposited low-temperature amorphous α-(Ga,As) layers. The microstructures and interface adhesion studies have been carried out on these wafer-bonded semiconductors. It has been found that the GaSb-on-α-(Ga,As) wafers have shown enhanced interface adhesion and lower temperature bonding capability. source:iopscience Other more news about Epitaxial Silicon Wafer ,GaAs Wafer or Gaas Epi Wafer, please visit our website: semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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Ion irradiation-induced polycrystalline InSb foam

2018-09-28

InSb films with various thicknesses were deposited by magnetron sputtering on SiO2/Si substrates and subsequently irradiated with 17 MeV Au+7 ions. The structural and electronic changes induced by ion irradiation were investigated by synchrotron and laboratory based techniques. Ion irradiation of InSb transforms compact films (amorphous and polycrystalline) in open cell solid foams. The initial stages of porosity were investigated by transmission electron microscopy analysis and reveal the porous structure initiates as small spherical voids with approximately 3 nm in diameter. The evolution of porosity was investigated by scanning electron microscopy images, which show that film thickness increases up to 16 times with increasing irradiation fluence. Here we show that amorphous InSb films become polycrystalline foams upon irradiation with 17 MeV Au+7 ions at fluences above 1014 cm−2. The films attain a zincblende phase, with crystallites randomly oriented, similarly to the polycrystalli...

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Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy

2018-09-20

We present surface photo-voltage (SPV) measurements on molecular beam epitaxy (MBE) grown single quantum well (SQW) laser structures. Each layer in the hetero-structure has been identified by measurement of the SPV signal after a controlled sequential chemical etching process. These results have been correlated with high resolution x-ray diffraction and photoluminescence (PL) measurements. Quantum confined Stark effect and the carrier screening of electric field have been taken into consideration both theoretically and experimentally to account for the differences observed in SPV and PL results. It is shown that SPV can be used as a very effective tool for evaluation of hetero-structures involving multiple layers. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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Titania–germanium nanocomposite for photo-thermo-electric application

2018-09-13

The introduction of germanium (Ge) into titania (TiO2) creates an attractive semiconductor. The new semiconductor is named titania–germanium (TiO2–Ge). Ge dots are dispersed in the distorted TiO2 matrix of TiO2–Ge. The quantum Bohr radius of Ge is 24.3 nm, and hence the properties of the Ge dot can be varied by tailoring its size if it is smaller than its Bohr radius due to the quantum confinement effect (QCE). Therefore, simply by changing the Ge concentration, the morphology of TiO2–Ge can be varied within a wide range. Consequently, the optical, electronic and thermal properties of TiO2–Ge can be tailored. TiO2–Ge becomes a promising material for the next generation of photovoltaics as well as thermoelectric devices. It could also be used for photo-thermo-electric applications. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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Characteristics of liquid phase deposited SiO2 on (NH4)2S-treated GaAs with an ultrathin Si interface passivation layer

2018-09-05

The characteristics of liquid-phase-deposited SiO2 film on GaAs were investigated. A mixture of H2SiF6 and H3BO3 aqueous precursors was used as the growth solution. SiO2 on GaAs with (NH4)2S treatment shows good electrical characteristics owing to the reduction of native oxides and sulfur passivation. The electrical characteristics are further improved with an ultrathin Si interface passivation layer (Si IPL) from the reduction of Fermi-level pinning and interface state density. Moreover, during the SiO2 deposition, HF in the growth solution can simultaneously and effectively remove native oxides on Si IPL and provide fluorine passivation on it. The Al/SiO2/Si IPL/(NH4)2S-treated GaAs MOS capacitor shows superior electrical properties. The leakage current densities can reach 7.4 × 10−9 and 6.83 × 10−8 A/cm2 at ±2 V. The interface state density can reach a 2.11 × 1011 cm−2 eV−1 with low frequency-dispersion of 8%. Source:IOPscience For more information, please visit our website: www.sem...

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