Home / Products / SiC Wafer /

SiC Substrate

Products
SiC Substrate

SiC Substrate

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices.  As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China's Semiconductor Lab,we are devoted to continuously improve the quality of currently substrates and develop large size substrates.

  • MOQ :

    1
  • Product Details

Silicon Carbide Wafers


PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices.  As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China's Semiconductor Lab,we are devoted to continuously improve the quality of currently substrates and develop large size substrates.


Here shows detail specification:


SILICON CARBIDE MATERIAL PROPERTIES

Polytype

Single Crystal 4H

Single Crystal 6H

Lattice Parameters

a=3.076 Å

a=3.073 Å

c=10.053 Å

c=15.117 Å

Stacking Sequence

ABCB

ABCACB

Band-gap

3.26 eV

3.03 eV

Density

3.21 · 103 kg/m3

3.21 · 103 kg/m3

Therm. Expansion Coefficient

4-5×10-6/K

4-5×10-6/K

Refraction Index

no = 2.719

no = 2.707

ne = 2.777

ne = 2.755

Dielectric Constant

9.6

9.66

Thermal Conductivity

490 W/mK

490 W/mK

Break-Down Electrical Field

2-4 · 108 V/m

2-4 · 108 V/m

Saturation Drift Velocity

2.0 · 105 m/s

2.0 · 105 m/s

Electron Mobility

800 cm2/V·S

400 cm2/V·S

hole Mobility

115 cm2/V·S

90 cm2/V·S

Mohs Hardness

~9

~9



6H N-TYPE SIC, 2″WAFER SPECIFICATION

SUBSTRATE PROPERTY

S6H-51-N-PWAM-250 S6H-51-N-PWAM-330 S6H-51-N-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade   6H SiC Substrate

Polytype

6H

Diameter

(50.8 ± 0.38) mm

Thickness

(250 ± 25) μm                  (330 ± 25) μm                  (430 ± 25) μm

Carrier Type

n-type

Dopant

Nitrogen

Resistivity (RT)

0.02 ~ 0.1 Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

Surface Orientation

On axis

<0001>± 0.5°

Off axis

3.5° toward <11-20>± 0.5°

Primary flat orientation

Parallel {1-100} ± 5°

Primary flat length

16.00 ± 1.70 mm

Secondary flat orientation

Si-face:90° cw. from orientation flat ± 5°

C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

8.00 ± 1.70 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Usable area

≥ 90 %

Edge exclusion

1 mm



4H SEMI-INSULATING SIC, 2″WAFER SPECIFICATION

(High-Purity Semi-Insulating(HPSI) SiC substrate is available)

SUBSTRATE PROPERTY

S4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade  4H SEMI Substrate

Polytype

4H

Diameter

(50.8 ± 0.38) mm

Thickness

(250 ± 25) μm                     (330 ± 25) μm                (430 ± 25) μm

Resistivity (RT)

>1E5 Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

Surface Orientation

On axis                         <0001>± 0.5°

Off axis                         3.5° toward <11-20>± 0.5°

Primary flat orientation

Parallel {1-100} ± 5°

Primary flat length

16.00 ± 1.70 mm

Secondary flat orientation              Si-face:90° cw. from orientation flat ± 5°

                                                   C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

8.00 ± 1.70 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Usable area

≥ 90 %

Edge exclusion

1 mm

4H N-type or Semi-insulating SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm

4H N-type or Semi-insulating SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm



4H N-TYPE SIC, 2″WAFER SPECIFICATION

SUBSTRATE PROPERTY

S4H-51-N-PWAM-330              S4H-51-N-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate

Polytype

4H

Diameter

(50.8 ± 0.38) mm

Thickness

(250 ± 25) μm                     (330 ± 25) μm                (430 ± 25) μm

Carrier Type

n-type

Dopant

Nitrogen

Resistivity (RT)

0.012 - 0.0028 Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

Surface Orientation

On axis

<0001>± 0.5°

Off axis

4°or 8° toward <11-20>± 0.5°

Primary flat orientation

Parallel {1-100} ± 5°

Primary flat length

16.00 ± 1.70) mm

Secondary flat orientation

Si-face:90° cw. from orientation flat ± 5°

C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

8.00 ± 1.70 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Usable area

≥ 90 %

Edge exclusion

1 mm



4H N-TYPE SIC, 3″WAFER  SPECIFICATION

SUBSTRATE PROPERTY

S4H-76-N-PWAM-330               S4H-76-N-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate

Polytype

4H

Diameter

(76.2 ± 0.38) mm

Thickness

     (350 ± 25) μm                            (430 ± 25) μm

Carrier Type

n-type

Dopant

Nitrogen

Resistivity (RT)

0.015 - 0.028Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

TTV/Bow /Warp

25μm

Surface Orientation

On axis

<0001>± 0.5°

Off axis

4°or 8° toward <11-20>± 0.5°

Primary flat orientation

<11-20>±5.0°

Primary flat length

22.22 mm±3.17mm

0.875″±0.125″

Secondary flat orientation

Si-face:90° cw. from orientation flat ± 5°

C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

11.00 ± 1.70 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Scratch

None

Usable area

≥ 90 %

Edge exclusion

2mm



4H SEMI-INSULATING SIC, 3″WAFER  SPECIFICATION

(High Purity Semi-Insulating(HPSI) SiC substrate is available)

SUBSTRATE PROPERTY

S4H-76-N-PWAM-330               S4H-76-N-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate

Polytype

4H

Diameter

(76.2 ± 0.38) mm

Thickness

     (350 ± 25) μm                            (430 ± 25) μm

Carrier Type

semi-insulating

Dopant

V

Resistivity (RT)

>1E5 Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

TTV/Bow /Warp

25μm

Surface Orientation

On axis

<0001>± 0.5°

Off axis

4°or 8° toward <11-20>± 0.5°

Primary flat orientation

<11-20>±5.0°

Primary flat length

22.22 mm±3.17mm

0.875″±0.125″

Secondary flat orientation

Si-face:90° cw. from orientation flat ± 5°

C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

11.00 ± 1.70 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Scratch

None

Usable area

≥ 90 %

Edge exclusion

2mm



4H N-TYPE SIC, 4″WAFER  SPECIFICATION

SUBSTRATE PROPERTY

S4H-100-N-PWAM-330               S4H-100-N-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate

Polytype

4H

Diameter

(100.8 ± 0.38) mm

Thickness

     (350 ± 25) μm                            (430 ± 25) μm

Carrier Type

n-type

Dopant

Nitrogen

Resistivity (RT)

0.015 - 0.028Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

TTV/Bow /Warp

45μm

Surface Orientation

On axis

<0001>± 0.5°

Off axis

4°or 8° toward <11-20>± 0.5°

Primary flat orientation

<11-20>±5.0°

Primary flat length

32.50 mm±2.00mm

Secondary flat orientation

Si-face:90° cw. from orientation flat ± 5°

C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

18.00 ± 2.00 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Scratch

None

Usable area

≥ 90 %

Edge exclusion

2mm

4H N-type or semi-insulating SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION: Thickness:330μm/430μm

4H N-type or semi-insulating SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION:Thickness:330μm/430μm


a-plane SiC Wafer, size: 40mm*10mm,30mm*10mm,20mm*10mm,10mm*10mm,specs below:

6H/4H N type                   Thickness:330μm/430μm or custom

6H/4H Semi-insulating     Thickness:330μm/430μm or custom



4H SIC,SEMI-INSULATING, 4″WAFER  SPECIFICATION

(High-Purity Semi-Insulating(HPSI) SiC substrate is available)

SUBSTRATE PROPERTY

S4H-100-SI-PWAM-350               S4H-100-SI-PWAM-500

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate

Polytype

4H

Diameter

(100 ± 0.5) mm

Thickness

     (350 ± 25) μm                            (500 ± 25) μm

Carrier Type

Semi-insulating

Dopant

V

Resistivity (RT)

>1E5 Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A5cm-2   B15cm-2  C50cm-2  D100cm-2

TTV/Bow /Warp

TTV10μm;TTV 25μm;WARP45μm

Surface Orientation

On axis

<0001>± 0.5°

Off axis

None

Primary flat orientation

<11-20>±5.0°

Primary flat length

32.50 mm±2.00mm
 

Secondary flat orientation

Si-face:90° cw. from orientation flat ± 5°

C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

18.00 ± 2.00 mm

Surface Finish

Double face polished

Packaging

Single wafer box or multi wafer box

Scratches

<8 scratches to 1 x wafer diameter with total cumulative length

Cracks

None

Usable area

≥ 90 %

Edge exclusion

2mm



4H SIC,N-TYPE , 6″WAFER  SPECIFICATION

SUBSTRATE PROPERTY

S4H-150-N-PWAM-350               

Description

Dummy Grade 2

Polytype

4H

Diameter

(150 ± 0.2) mm

Thickness

     (350 ± 25) μm                          

Carrier Type

n-type

Dopant

Nitrogen

Resistivity (RT)

0.015 - 0.028Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

Micropipe Density

N/A

TTV

30μm

Bow

120μm

Warp

150μm

Surface Orientation

 

Off axis

4° toward <11-20>± 0.5°

Primary flat orientation

<10-10>±5.0°

Primary flat length

47.50 mm±2.50mm
 

Surface Finish

Double face polished

Edge exclusion

3mm

Packaging

Single wafer box or multi wafer box

Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.
Subject : SiC Substrate

Related Products

sic crystal

SiC Epitaxy

We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.

sic crystal

SiC Wafer Reclaim

PAM-XIAMEN is able to offer the following SiC reclaim wafer services.

sic wafer

SIC Application

Due to SiC physical and electronic properties,Silicon Carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device.

Silicon Wafer

Float-zone mono-crystalline silicon

FZ-Silicon The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce 1

Silicon Wafer

Cz mono-crystalline silicon

CZ-Silicon The heavily/lightly-doped CZ mono-crystalline silicon is suitable for producing various integrated circuits (IC), diodes, triodes, green-energy solar panel. The special elements (such as Ga, Ge) can be added to produce the high-efficiency, radiation-resistant and anti-degenerating solar cell materials for special components.

GaP substrate

GaP wafer

Xiamen Powerway offers GaP wafer - gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

gan HEMT epitaxy

GaN HEMT epitaxial wafer

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.

gan on silicon

Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.