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SiC Substrate

SiC Substrate

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices.  As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China's Semiconductor Lab,we are devoted to continuously improve the quality of currently substrates and develop large size substrates.

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Silicon Carbide Wafers


PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices.  As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China's Semiconductor Lab,we are devoted to continuously improve the quality of currently substrates and develop large size substrates.


Here shows detail specification:


SILICON CARBIDE MATERIAL PROPERTIES

Polytype

Single Crystal 4H

Single Crystal 6H

Lattice Parameters

a=3.076 Å

a=3.073 Å

c=10.053 Å

c=15.117 Å

Stacking Sequence

ABCB

ABCACB

Band-gap

3.26 eV

3.03 eV

Density

3.21 · 103 kg/m3

3.21 · 103 kg/m3

Therm. Expansion Coefficient

4-5×10-6/K

4-5×10-6/K

Refraction Index

no = 2.719

no = 2.707

ne = 2.777

ne = 2.755

Dielectric Constant

9.6

9.66

Thermal Conductivity

490 W/mK

490 W/mK

Break-Down Electrical Field

2-4 · 108 V/m

2-4 · 108 V/m

Saturation Drift Velocity

2.0 · 105 m/s

2.0 · 105 m/s

Electron Mobility

800 cm2/V·S

400 cm2/V·S

hole Mobility

115 cm2/V·S

90 cm2/V·S

Mohs Hardness

~9

~9



6H N-TYPE SIC, 2″WAFER SPECIFICATION

SUBSTRATE PROPERTY

S6H-51-N-PWAM-250 S6H-51-N-PWAM-330 S6H-51-N-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade   6H SiC Substrate

Polytype

6H

Diameter

(50.8 ± 0.38) mm

Thickness

(250 ± 25) μm                  (330 ± 25) μm                  (430 ± 25) μm

Carrier Type

n-type

Dopant

Nitrogen

Resistivity (RT)

0.02 ~ 0.1 Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

Surface Orientation

On axis

<0001>± 0.5°

Off axis

3.5° toward <11-20>± 0.5°

Primary flat orientation

Parallel {1-100} ± 5°

Primary flat length

16.00 ± 1.70 mm

Secondary flat orientation

Si-face:90° cw. from orientation flat ± 5°

C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

8.00 ± 1.70 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Usable area

≥ 90 %

Edge exclusion

1 mm



4H SEMI-INSULATING SIC, 2″WAFER SPECIFICATION

(High-Purity Semi-Insulating(HPSI) SiC substrate is available)

SUBSTRATE PROPERTY

S4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade  4H SEMI Substrate

Polytype

4H

Diameter

(50.8 ± 0.38) mm

Thickness

(250 ± 25) μm                     (330 ± 25) μm                (430 ± 25) μm

Resistivity (RT)

>1E5 Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

Surface Orientation

On axis                         <0001>± 0.5°

Off axis                         3.5° toward <11-20>± 0.5°

Primary flat orientation

Parallel {1-100} ± 5°

Primary flat length

16.00 ± 1.70 mm

Secondary flat orientation              Si-face:90° cw. from orientation flat ± 5°

                                                   C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

8.00 ± 1.70 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Usable area

≥ 90 %

Edge exclusion

1 mm

4H N-type or Semi-insulating SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm

4H N-type or Semi-insulating SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm



4H N-TYPE SIC, 2″WAFER SPECIFICATION

SUBSTRATE PROPERTY

S4H-51-N-PWAM-330              S4H-51-N-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate

Polytype

4H

Diameter

(50.8 ± 0.38) mm

Thickness

(250 ± 25) μm                     (330 ± 25) μm                (430 ± 25) μm

Carrier Type

n-type

Dopant

Nitrogen

Resistivity (RT)

0.012 - 0.0028 Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

Surface Orientation

On axis

<0001>± 0.5°

Off axis

4°or 8° toward <11-20>± 0.5°

Primary flat orientation

Parallel {1-100} ± 5°

Primary flat length

16.00 ± 1.70) mm

Secondary flat orientation

Si-face:90° cw. from orientation flat ± 5°

C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

8.00 ± 1.70 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Usable area

≥ 90 %

Edge exclusion

1 mm



4H N-TYPE SIC, 3″WAFER  SPECIFICATION

SUBSTRATE PROPERTY

S4H-76-N-PWAM-330               S4H-76-N-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate

Polytype

4H

Diameter

(76.2 ± 0.38) mm

Thickness

     (350 ± 25) μm                            (430 ± 25) μm

Carrier Type

n-type

Dopant

Nitrogen

Resistivity (RT)

0.015 - 0.028Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

TTV/Bow /Warp

25μm

Surface Orientation

On axis

<0001>± 0.5°

Off axis

4°or 8° toward <11-20>± 0.5°

Primary flat orientation

<11-20>±5.0°

Primary flat length

22.22 mm±3.17mm

0.875″±0.125″

Secondary flat orientation

Si-face:90° cw. from orientation flat ± 5°

C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

11.00 ± 1.70 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Scratch

None

Usable area

≥ 90 %

Edge exclusion

2mm



4H SEMI-INSULATING SIC, 3″WAFER  SPECIFICATION

(High Purity Semi-Insulating(HPSI) SiC substrate is available)

SUBSTRATE PROPERTY

S4H-76-N-PWAM-330               S4H-76-N-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate

Polytype

4H

Diameter

(76.2 ± 0.38) mm

Thickness

     (350 ± 25) μm                            (430 ± 25) μm

Carrier Type

semi-insulating

Dopant

V

Resistivity (RT)

>1E5 Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

TTV/Bow /Warp

25μm

Surface Orientation

On axis

<0001>± 0.5°

Off axis

4°or 8° toward <11-20>± 0.5°

Primary flat orientation

<11-20>±5.0°

Primary flat length

22.22 mm±3.17mm

0.875″±0.125″

Secondary flat orientation

Si-face:90° cw. from orientation flat ± 5°

C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

11.00 ± 1.70 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Scratch

None

Usable area

≥ 90 %

Edge exclusion

2mm



4H N-TYPE SIC, 4″WAFER  SPECIFICATION

SUBSTRATE PROPERTY

S4H-100-N-PWAM-330               S4H-100-N-PWAM-430

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate

Polytype

4H

Diameter

(100.8 ± 0.38) mm

Thickness

     (350 ± 25) μm                            (430 ± 25) μm

Carrier Type

n-type

Dopant

Nitrogen

Resistivity (RT)

0.015 - 0.028Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2

TTV/Bow /Warp

45μm

Surface Orientation

On axis

<0001>± 0.5°

Off axis

4°or 8° toward <11-20>± 0.5°

Primary flat orientation

<11-20>±5.0°

Primary flat length

32.50 mm±2.00mm

Secondary flat orientation

Si-face:90° cw. from orientation flat ± 5°

C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

18.00 ± 2.00 mm

Surface Finish

Single or double face polished

Packaging

Single wafer box or multi wafer box

Scratch

None

Usable area

≥ 90 %

Edge exclusion

2mm

4H N-type or semi-insulating SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION: Thickness:330μm/430μm

4H N-type or semi-insulating SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION:Thickness:330μm/430μm


a-plane SiC Wafer, size: 40mm*10mm,30mm*10mm,20mm*10mm,10mm*10mm,specs below:

6H/4H N type                   Thickness:330μm/430μm or custom

6H/4H Semi-insulating     Thickness:330μm/430μm or custom



4H SIC,SEMI-INSULATING, 4″WAFER  SPECIFICATION

(High-Purity Semi-Insulating(HPSI) SiC substrate is available)

SUBSTRATE PROPERTY

S4H-100-SI-PWAM-350               S4H-100-SI-PWAM-500

Description

A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate

Polytype

4H

Diameter

(100 ± 0.5) mm

Thickness

     (350 ± 25) μm                            (500 ± 25) μm

Carrier Type

Semi-insulating

Dopant

V

Resistivity (RT)

>1E5 Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

FWHM

A<30 arcsec                   B/C/D <50 arcsec 

Micropipe Density

A5cm-2   B15cm-2  C50cm-2  D100cm-2

TTV/Bow /Warp

TTV10μm;TTV 25μm;WARP45μm

Surface Orientation

On axis

<0001>± 0.5°

Off axis

None

Primary flat orientation

<11-20>±5.0°

Primary flat length

32.50 mm±2.00mm
 

Secondary flat orientation

Si-face:90° cw. from orientation flat ± 5°

C-face:90° ccw. from orientation flat ± 5°

Secondary flat length

18.00 ± 2.00 mm

Surface Finish

Double face polished

Packaging

Single wafer box or multi wafer box

Scratches

<8 scratches to 1 x wafer diameter with total cumulative length

Cracks

None

Usable area

≥ 90 %

Edge exclusion

2mm



4H SIC,N-TYPE , 6″WAFER  SPECIFICATION

SUBSTRATE PROPERTY

S4H-150-N-PWAM-350               

Description

Dummy Grade 2

Polytype

4H

Diameter

(150 ± 0.2) mm

Thickness

     (350 ± 25) μm                          

Carrier Type

n-type

Dopant

Nitrogen

Resistivity (RT)

0.015 - 0.028Ω·cm

Surface Roughness

< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)

Micropipe Density

N/A

TTV

30μm

Bow

120μm

Warp

150μm

Surface Orientation

 

Off axis

4° toward <11-20>± 0.5°

Primary flat orientation

<10-10>±5.0°

Primary flat length

47.50 mm±2.50mm
 

Surface Finish

Double face polished

Edge exclusion

3mm

Packaging

Single wafer box or multi wafer box

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