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2.Definition of Dimensional Properties,Terminology and Methods of Silicon Carbide Wafer
  • 2-1.Wafer Diameter

    2018-01-08

    The linear distance across the surface of a circular slice which contains the slice center and excludes any flats or other peripheral fiduciary areas. Standard silicon wafer diameters are: 25.4mm (1"), 50.4mm (2"), 76.2mm (3"), 100mm (4"), 125mm(5"), 150mm (6"), 200mm (8"), and 300mm (12"). The linear dimension across the surface of a wafer. Measurement is performed manually with ANSI certied digital calipers on each individual wafer.

  • 2-2.Wafer Thickness, Center Point

    2018-01-08

    Thin (thickness depends on wafer diameter, but is typically less than 1mm),circular slice of single-crystal semiconductor material cut from the ingot of single crystal semiconductor; used in manufacturing of semiconductor devices and integrated circuits; wafer diameters may range from 5mm to 300mm. Measured with ANSI certied non-contact tools at the center of each individual wafer.

  • 2-3.Wafer Flat Length

    2018-01-08

    Linear dimension of the at measured with ANSI certied digital calipers on a sample of one wafer per ingot.

  • 2-4.Wafer Surface Orientation

    2018-01-08

    Denotes the orientation of the surface of a wafer with respect to a crystallographic plane within the lattice structure. In wafers cut intentionally “off orientation”, the direction of cut is parallel to the primary  at, away from the secondary  at. Measured with x-ray goniometer on a sample of one wafer per ingot in the center of the wafer.

  • 2-5.Misorientation

    2018-01-08

    In wafers cut intentionally “off orientation”, the angle between the projection of the normal vector to the wafers surface onto a {0001} plane and the projection on that plane of the nearest <11-20> direction.

  • 2-6.Wafer Primary Flat

    2018-01-08

    The flat of longest length on the wafer, oriented such that the chord is parallel with a specified low index crystal plane; major flat. The primary at is the {10-10} plane with the at face parallel to the <11-20> direction.

  • 2-7.Primary Flat Orientation

    2018-01-08

    The at of the longest length on the wafer, oriented such that the chord is parallel with a specied low index crystal plane. Measured on one wafer per ingot using Laue back-reection technique with manual angle measurement.

  • 2-8.Secondary Flat Orientation

    2018-01-08

    A at of shorter length than the primary orientation at,whose position with respect to the primary  orientation at identies the face of the wafer.

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