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2.Definition of Dimensional Properties,Terminology and Methods of Silicon Carbide Wafer
  • 2-9.(Area) Wafer Contamination

    2018-01-08

    Any foreign matter on the surface in localized areas which is revealed under high intensity (or diffuse) illumination as discolored, mottled, or cloudy appearance resulting from smudges, stains or water spots.

  • 2-10.Cracks

    2018-01-08

    A fracture or cleavage of the wafer that extends from the frontside surface of the wafer to the back-side surface of the wafer. Cracks must exceed 0.010” in length under high intensity illumination in order to discriminate fracture lines from allowable crystalline striations. Fracture lines typically exhibit sharp, thin lines of propagation,which discriminate them from material striations.

  • 2-11.Edge Chips

    2018-01-08

    Any edge anomalies (including wafer saw exit marks) in excess of 1.0 mm in either radial depth or width. As viewed under diffuse illumination, edge chips are determined as unintentionally missing material from the edge of the wafer.

  • 2-12.Edge Exclusion

    2018-01-08

    The outer annulus of the wafer is designated as wafer handling area and is excluded from surface nish criteria (such as scratches, pits, haze, contamination, craters,dimples, grooves, mounds, orange peel and saw marks). This annulus is 2 mm for 76.2 mm substrates, and 3 mm for 100.0 mm substrates.

  • 2-13.Hex Plate

    2018-01-08

    Hexagonal shaped platelets on the surface of the wafer which appear silver in color to the unaided eye, under diffuse illumination.

  • 2-14.Masking Defects

    2018-01-08

    also referred to as “Mound” When one defect prevents the detection of another defect, the undetected defect is called the masked defect. A distinct raised area above the wafer frontside surface as viewed with diffuse illumination.

  • 2-15.Orange Peel

    2018-01-08

    Visually detectable surface roughening when viewed under diffuse illumination.

  • 2-16.Pits

    2018-01-08

    Individual distinguishable surface anomalies, which appears as a depression in the wafer surface with a lengthto-width ratio less than 5 to 1, and visible under high intensity illumination.

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