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Epitaxial Silicon Wafer

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Epitaxial Silicon Wafer

Epitaxial Silicon Wafer

Silicon Epitaxial Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer,but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial layer)


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Epitaxial Silicon Wafer


Silicon Epitaxial Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer,but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial layer)


The epitaxial layer can be doped, as it is deposited, to the precise doping concentration while continuing the substrate’s crystalline structure.


Epilayer resistivity: <1 ohm-cm up to 150 ohm-cm

Epilayer thickness: < 1 um up to 150 um

Structure: N/N+, N-/N/N+, N/P/N+, N/N+/P-,  N/P/P+, P/P+, P-/P/P+.


Wafer Application: Digital, Linear, Power, MOS, BiCMOS Devices.


Our advantages at a glance

1.Advanced epitaxy growth equipment and test equipment.

2.Offer the highest quality with low defect density and good surface roughness.

3.Strong research team support and technology support for our customers


6″ Wafer specification:

Item

Specification

Substrate

Sub spec No.

Ingot growth method

CZ

Conductivity type

N

Dopant

As

Orientation

(100)±0.5°

Resistivity

0.005Ohm.cm

RRG

15%

[Oi] Content

8~18 ppma

Diameter

150±0.2 mm

Primary Flat Length

55~60 mm

Primary Flat Location

{110}±1°

Secondly Flat Length

semi

Secondly Flat Location

semi

Thickness

625±15 um

Backside Characteristics:

1BSD/Poly-Si(A)

1.BSD

2SIO2

2.LTO:5000±500 A

3Edge Exclusion

3.EE:?0.6 mm

Laser Marking

NONE

Front surface

Mirror polished

Epi

Structure

N/N+

Dopant

Phos

Thickness

3±0.2 um

Thk.Uniformity

5 %

Measurement Position

Center(1 pt) 10mm from edge(4 pts @90 degrees)

Calculation

[Tmax-Tmin]÷[[Tmax+Tmin]X 100%

Resistivity

2.5±0.2 Ohm.cm

Res.Uniformity

5 %

Measurement Position

Center(1 pt) 10mm from edge(4 pts @90 degrees)

Calculation

[Rmax-Rmin]÷[[Rmax+Rmin]X 100%

Stack fault Density

2ea/cm2

Haze

NONE

Scratches

NONE

CratersOrange Peel

NONE

Edge Crown

1/3 Epi thickness

Slip(mm)

Total Length 1Dia

Foreign Matter

NONE

Back Surface Contamination

NONE

Total Point Defects(particle)

30@0.3um

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