Ge(Germanium) Single Crystals and Wafers

General  Properties Structure

Cubic, a = 5.6754 Å 

Density: 5.765 g/cm3

Melting   Point: 937.4 oC 

Thermal Conductivity: 640

Crystal Growth Technology

Czochralski 

Doping  available

Undoped

Sb Doping

Doping In or Ga 

Conductive Type

/   

N 

P

Resistivity, ohm.cm

>35  

< 0.05  

0.05 - 0.1 

EPD 

< 5x10³/cm²  

< 5x10³/cm²  

< 5x10³/cm²  

< 5x10²/cm²  

< 5x10²/cm² 

< 5x10²/cm²  

Electronic Grade

Used for diodes and transistors,

Infrared or opitical Grade

Used for IR optical window or disks,opitical components

Cell Grade

Used for substrates of solar cell 

Crystal Orientation

<111>,<100> and <110> ± 0.5^o or custom orientation

Crystal boule as grown

1" ~ 6" diameter  x  200 mm Length

Standard blank as cut

1"x 0.5mm

2"x0.6mm

4"x0.7mm

5"&6"x0.8mm 

Standard Polished wafer(One/two sides polished)

1"x 0.30 mm

2"x0.5mm

4"x0.5mm

 5"&6"x0.6mm

Item

Specifications

Remarks

Growth Method

VGF

Conduction Type

n-type, p type, undoped

Dopant

Gallium or Antimony

Wafer Diamter

2, 3,4 & 6

 inch

Crystal Orientation

(100),(111),(110)

Thickness

200~550

um

OF

EJ or US

Carrier Concentration

request upon customers

Resistivity at RT

(0.001~80)

Ohm.cm

Etch Pit Density

<5000

/cm2

Laser Marking

upon request

Surface Finish

P/E or P/P

Epi ready

Yes

Package

Single wafer container or cassette

4 inch Ge wafer Specification

for Solar Cells

Doping

P

Doping substances

 Ge-Ga

Diameter

 100±0.25 mm

Orientation

(100) 9° off toward <111>+/-0.5

Off-orientation tilt angle

N/A

Primary Flat Orientation

N/A

Primary Flat Length

32±1

mm

Secondary Flat Orientation

 N/A

Secondary Flat Length

N/A

 mm

cc

(0.26-2.24)E18

/c.c

Resistivity

(0.74-2.81)E-2

ohm.cm

Electron Mobility

382-865

cm2/v.s.

EPD

<300

/cm2

Laser Mark

N/A

Thickness

175±10

 μm

TTV

＜15

μm

TIR

N/A

μm

BOW

 <10

μm

Warp

＜10

μm

Front face

 Polished

Back face

 Ground