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  • Generation of difference-frequency radiation in the far- and mid-IR ranges in a two-chip laser based on gallium arsenide on a germanium substrate

    2019-02-11

    The possibility of efficient generation of difference-frequency radiation in the far- and mid-IR ranges in a two-chip laser based on gallium arsenide grown on a germanium substrate is considered. It is shown that a laser with a waveguide of width 100 μm emitting 1 W in the near-IR range can generate ≈40 μW at the difference frequency in the region 5—50 THz at room temperature. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

  • PAM XIAMEN is comparable to the UK IQE to build Asian VCSEL epitaxial core supply chain

    2019-01-28

    PAM XIAMEN is comparable to the UK IQE to build Asian VCSEL epitaxial core supply chain Xiamen Powerway focuses on high-end compound semiconductor epitaxial R&D and manufacturing. In 2018, the 4-inch and 6-inch VCSELs were mass-produced and entered the mainstream chip manufacturers in Taiwan. Utilizing state-of-the-art MBE (Molecular Epitaxial Beam Epitaxy) mass production technology to achieve the highest quality of the industry's largest quality VCSEL epitaxial products. As more and more smartphone and IT equipment vendors follow Apple's footsteps, VCEL (Vertical Cavity Surface Emitting Lasers)-based 3D sensor systems will be integrated into their new electronics. According to Memes Consulting, the shipment of VCSEL chips for smartphones next year is expected to double to 240 million in 2018. In the next five years, the global VCSEL market will continue to grow with the capacity of relevant suppliers in the international arena. The market size will grow to $3.12 billion by 2022, with a compound annual growth rate of 17.3%.VCSEL device suppliers in Taiwan are all preparing for the strong growth of VCSEL sales in 2018.International VCSEL chip suppliers: such as Lumentum Holdings, Finisar, Princeton Optronics, Heptagon also follow up, and also strive for a share of the market in this field. At the same time, Xiamen Powerway focuses on the industry's highest quality MBE (molecular beam epitaxy) process. With the expansion of 3D sensing, data center and 5G applications, MBE technology will enter the mainstream market in the future. Xiamen Powerway has begun to supply 6-inch large-size PHEMT, VCSEL, Lasers (750nm to 1100nm), QWIP, PIN (GaAs, InP), and 25G Data Center epitaxial structure products. With the increasing use of VCSEL technology, the company's product line will expand from communications, optical communications and sensing to laser radar, industrial heating, machine vision and medical laser applications. In 2018, VCSEL will become the main driving force for the long-term growth of Xiamen Powerway. VCSEL wavelength emission beam comparison Finisar, a US VCSEL chip supplier, has been eye-catching recently and is expanding its plant capacity in Sherman, Texas, USA, with an investment of $390 million from Apple. The newly added capacity is expected to be operational in the second half of 2018. With Finisar's VCSEL capacity growth, combined with the existing Lumentum supply capabilities, Apple is expected to apply the deep 3D face recognition technology to other products beyond the iPhone X, such as the large size iPad, and applications in the AR(Augmented Reality) field. Xiamen Powerway produces China's first 4-inch 940nm VCSEL semiconductor epitaxial wafer According to IQE, the UK's largest supplier of wafer epitaxial wafers, the annual growth rate of its optoelectronics business revenue has doubled due to the demand of VCSEL. IQE's financial performance this year is set to record a new record. As VCSEL product development enters mass pro...

  • Semicoherent growth of Bi2Te3 layers on InP substrates by hot wall epitaxy

    2019-01-21

    We search for optimum growth conditions to realize flat BiTe layers on InP(111)B by hot wall epitaxy. The substrate provides a relatively small lattice mismatch, and so (0001)-oriented layers grow semicoherently. The temperature window for the growth is found to be narrow due to the nonzero lattice mismatch and rapid re-evaporation of BiTe. The crystalline qualities evaluated by means of x-ray diffraction reveal deteriorations when the substrate temperature deviates from the optimum not only to low temperatures but also to high temperatures. For high substrate temperatures, the Bi composition increases as Te is partially lost by sublimation. We show, in addition, that the exposure of the BiTe flux at even higher temperatures results in anisotropic etching of the substrates due, presumably, to the Bi substitution by the In atoms from the substrates. By growing BiTe layers on InP(001), we demonstrate that the bond anisotropy on the substrate surface gives rise to a reduction in the in-plane epitaxial alignment symmetry. source:iopscience More informations about other products like InP substrate , Inp Wafer etc welcome visit our website: semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.

  • Diamond turning of small Fresnel lens array in single crystal InSb

    2019-01-14

    A small Fresnel lens array was diamond turned in a single crystal InSb wafer using a half-radius negative rake angle (−25°) single-point diamond tool. The machined array consisted of three concave Fresnel lenses cut under different machining sequences. The Fresnel lens profiles were designed to operate in the paraxial domain having a quadratic phase distribution. The sample was examined by scanning electron microscopy and an optical profilometer. Optical profilometry was also used to measure the surface roughness of the machined surface. Ductile ribbon-like chips were observed on the cutting tool rake face. No signs of cutting edge wear was observed on the diamond tool. The machined surface presented an amorphous phase probed by micro Raman spectroscopy. A successful heat treatment of annealing was carried out to recover the crystalline phase on the machined surface. The results indicated that it is possible to perform a 'mechanical lithography' process in single crystal semiconductors. source:iopscience For more information or more products like Germanium Single Crystals, single crystal wafers ,InSb wafer etc please visit our website: semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.

  • Layered growth modelling of epitaxial growth processes for SiC polytypes

    2019-01-08

    Epitaxial growth processes for SiC polytypes in which a SiC substrate is employed are studied using a layered growth model. The corresponding phase diagrams of epitaxial growth processes are given. First-principles calculations are used to determine the parameters in the layered growth model. The layered growth phase diagrams show that when the rearrangement of atoms in one surface Si–C bilayer is allowed, the 3C-SiC structure is formed. When the rearrangement of atoms in two surface Si–C bilayers is allowed, the 4H-SiC structure is formed. When the rearrangement of atoms in more than two surface Si–C bilayers, excepting the case of five surface Si–C bilayers, is allowed, the 6H-SiC structure is formed, which is also shown to be the ground state structure. When the rearrangement of atoms in five surface Si–C bilayers is allowed, the 15R-SiC structure is formed. Thus the 3C-SiC phase would grow epitaxially at low temperature, the 4H-SiC phase would grow epitaxially at intermediate temperature and the 6H-SiC or 15R-SiC phases would grow epitaxially at higher temperature. source:iopscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.

  • Processing and mechanical properties of aluminium-silicon carbide metal matrix composites

    2019-01-03

    In this study, aluminium-silicon carbide (Al-SiC) metal matrix composites (MMCs) of different compositions were prepared under different compaction loads. Three different types Al-SiC composite specimens having 10%, 20% and 30% volume fractions of silicon carbide were fabricated using conventional powder metallurgy (PM) route. The specimens of different compositions were prepared under different compaction loads 10 ton and 15 ton. The effect of volume fraction of SiC particulates and compaction load on the properties of Al/SiC composites were investigated. The obtained results show that density and hardness of the composites are greatly influenced by volume fraction of silicon carbide particulates. Results also show that density, hardness and microstructure of Al-SiC composites are significantly influenced depending on the compaction load. The increase in the volume fraction of SiC enhances the density and hardness of the Al/SiC composites. For 15 ton compaction load, the composites show increased density and hardness as well as improved microstructure than the composites prepared under 10 ton compaction load. Furthermore, optical micrographs reveal that SiC particulates are uniformly distributed in the Al matrix. source:iopscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.

  • Defects in and device properties of semi-insulating GaAs

    2018-12-26

    It is well known that there are many arsenic precipitates in LEC GaAs, the dimensions of which are 500-2000 AA. The authors have recently found that these arsenic precipitates affect the device properties of chloride epitaxial-type MESFETS. They also affect the formation of small surface oval defects on MBE layers. To reduce the density of these arsenic precipitates, a multiple-wafer-annealing (MWA) technology has been developed in which wafers are annealed first at 1100 degrees C and then at 950 degrees C. By this annealing, highly uniform substrates with low arsenic precipitate densities, uniform PL and CL, uniform microscopic resistivity distributions and uniform surface morphology after AB etching can be obtained. These MWA wafers showed low threshold voltage variations for condensed ion-implantation-type MESFETS. In the present paper recent works are reviewed and the mechanism of arsenic precipitation is discussed from the viewpoint of stoichiometry. source:iopscience Other more CdZnTe products like CdZnTe Wafer ,CZT Crystal ,Cadmium Zinc Telluride ,welcome visit our website:www.semiconductorwafers.net Send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

  • Surface passivation and electrical properties of p-CdZnTe crystal

    2018-12-17

    The electrical properties of Au/p-CdZnTe contacts with different surface treatments, especially passivation treatment, are investigated in this paper. After the passivation, a TeO2 oxide layer with a thickness of 3.1 nm on the CdZnTe surface was identified by XPS analysis. Meanwhile, photoluminescence (PL) spectra confirmed that the passivation treatment minimized the surface trap state density and decreased the deep-level defects related to recombination of Cd vacancies. Current–voltage and capacitance–voltage characteristics were measured. It was shown that the passivation treatment could increase the barrier height of the Au/p-CdZnTe contact and decrease the leakage current. source:iopscience Other more CdZnTe products like CdZnTe Wafer ,CZT Crystal ,Cadmium Zinc Telluride ,welcome visit our website:www.semiconductorwafers.net Send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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