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  • Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers


    Thermal management of high-power semiconductor lasers is of great importance since the output power and beam quality are affected by the temperature rise of the gain region. Thermal simulations of a vertical-external-cavity surface-emitting laser by a finite-element method showed that the solder layer between the semiconductor thin film consisting of the gain region and a heat sink has a strong influence on the thermal resistance and direct bonding is preferred to achieve effective heat dissipation. To realize thin-film semiconductor lasers directly bonded on a high-thermal-conductivity substrate, surface-activated bonding using an argon fast atom beam was applied to the bonding of gallium arsenide (GaAs) and silicon carbide (SiC) wafers. The GaAs or SiC structure was demonstrated in the wafer scale (2 in. in diameter) at room temperature. The cross-sectional transmission electron microscopy observations showed that void-free bonding interfaces were achieved. source:iopscience For more information , please visit our website: semiconductorwafers.net Send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

  • High Uniform Waveguide Photodiodes Fabricated on a 2-inch InP Wafer with Low Darkcurrent and High Responsivity


    We have fabricated waveguide photodiodes with high uniform characteristics on a 2-inch InP wafer introducing a novel process. The 2-inch wafer fabrication procedure was carried out successfully by utilizing SiNx deposition on the back of the wafer in order to compensate wafer warp. Almost all the measured waveguide photodiodes exhibited low darkcurrent (average 419 pA, σ= 49 pA at 10 V reverse bias voltage) throughout the 2-inch wafer, and high responsivity of 0.987 A/W (σ=0.011 A/W) was obtained in a consecutive 60-channel array at the input wavelength of 1.3 µm. In addition, uniformity of frequency response was also confirmed. source:iopscience For more information , please visit our website: semiconductorwafers.net Send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

  • Wet Chemical Surface Passivation of Germanium Wafers by Quinhydrone–Methanol Treatment for Minority Carrier Lifetime Measurements


    We have applied quinhydrone/methanol (Q/M) treatment to germanium (Ge) surfaces and shown that this treatment is also effective for passivating Ge surfaces for minority carrier lifetime measurements. Surface recombination velocity (S) of less than 20 cm/s has been obtained, which enables us to accurately evaluate the bulk lifetime of minority carriers, τb, in Ge wafer. To the best of our knowledge, this is the first report on wet chemical treatment successfully applied to Ge surfaces achieving low values of S. source:iopscience For more information , please visit our website: semiconductorwafers.net Send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

  • How will the SiC and GaN power semiconductor market develop?


    The Development of SiC and GaN Power Semiconductor Market The current state of SiC technology and market, and the development trend in the next few years. The SiC device market is promising. Sales of Schottky barrier diodes have matured and MOSFET shipments are expected to increase significantly over the next three years. According to Yole Développement analysts, SiC is very mature in terms of diodes, and GaN has no challenge at all for SiC MOSFETs with voltages of 1.2kV and above. GaN may compete with SiC MOSFETs in the 650V range, but SiC is more mature. It is expected that SiC sales will grow rapidly, and SiC will gain market share from the silicon power device market, and it is estimated that the compound growth rate will reach 28% in the next few years. IHS Markit believes that the SiC industry will continue to grow strongly, driven by growth in applications such as hybrid and electric vehicles, power electronics and photovoltaic inverters. SiC power devices mainly include power diodes and transistors (transistors, switching transistors). SiC power devices double the power, temperature,frequency, radiation immunity, efficiency and reliability of power electronics systems, resulting in significant reductions in size, weight and cost. The penetration of the SiC market is also growing, especially in China, where Schottky diodes, MOSFETs, junction-gate field effect transistors (JFETs) and other SiC discrete devices have appeared in mass-produced automotive DC-DC converters, automotive battery chargers. In some applications, GaN devices or GaN system integrated circuits may become competitors for SiC devices. The first GaN transistor to comply with the automotive AEC-Q101 specification was released by Transphorm in 2017. Moreover, GaN devices fabricated on GaN-on-Si epitaxial wafer have a relatively low cost and are easier to fabricate than any product on SiC wafers. For these reasons, GaN transistors may be the first choice for inverters in the late 2020s, and are superior to the more expensive SiC MOSFETs. GaN system integrated circuits package GaN transistors together with silicon gate driver ICs or monolithic full GaN ICs. Once their performance is optimized for mobile phones and notebook chargers and other high-volume applications, it is likely to be widely available on a wider scale. The current development of commercial GaN power diodes has not really begun because they fail to provide significant benefits relative to Si devices and are too expensive to be feasible. SiC Schottky diodes have been well used for these purposes and have a good pricing roadmap. In the manufacture field in this line, few players offer both these two materials, but Xiamen Powerway Advanced Material Co., Ltd(PAM-XIAMEN) engage in GaN and SiC materials together, its production line includes SiC substrate and epitaxy, GaN substrate, GaN HEMT epi wafer on silicon/SiC/Sapphire, and GaN based material with MQW for blue or green emission. IHS Markit expects: By 2020, th...

  • High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy


    There is a method of controlling nucleation and lateral growth using the three-dimensional (3D) and two-dimensional (2D) growth modes to reduce the dislocation density. We performed 3D–2D-AlN growth on 6H-SiC substrates to obtain high-quality and crack-free AlN layers by low-pressure hydride vapor phase epitaxy (LP-HVPE). First, we performed 3D-AlN growth directly on a 6H-SiC substrate. With increasing V/III ratio, the AlN island density decreased and the grain size increased. Second, 3D–2D-AlN layers were grown directly on a 6H-SiC substrate. With increasing the V/III ratio of 3D-AlN, the crystalline qualities of the 3D–2D-AlN layer were improved. Third, we performed 3D–2D-AlN growth on a trench-patterned 6H-SiC substrate. The crack density was reduced to relax the stress by voids. We also evaluated the threading dislocation density by using molten KOH/NaOH etching. As a result, the estimated edge dislocation density of the 3D–2D-AlN sample was 3.9 × 108 cm−2. source:iopscience For more information , please visit our website: semiconductorwafers.net Send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

  • Interfacial and mechanical characterization of wafer-bonded GaSb/amorphous α-(Ga,As)/GaAs structure for GaSb-on-insulator applications


    In this study, the feasibility of using wafer-bonding technology to fabricate a GaSb semiconductor on GaAs substrate for potentially creating a GaSb-on-insulator structure has been demonstrated. A GaSb wafer has been bonded on two types of GaAs substrates: (1) a regular single crystal semi-insulating GaAs substrate (2) the GaAs wafers with pre-deposited low-temperature amorphous α-(Ga,As) layers. The microstructures and interface adhesion studies have been carried out on these wafer-bonded semiconductors. It has been found that the GaSb-on-α-(Ga,As) wafers have shown enhanced interface adhesion and lower temperature bonding capability. source:iopscience For more information , please visit our website: semiconductorwafers.net Send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

  • Ion irradiation-induced polycrystalline InSb foam


    InSb films with various thicknesses were deposited by magnetron sputtering on SiO2/Si substrates and subsequently irradiated with 17 MeV Au+7 ions. The structural and electronic changes induced by ion irradiation were investigated by synchrotron and laboratory based techniques. Ion irradiation of InSb transforms compact films (amorphous and polycrystalline) in open cell solid foams. The initial stages of porosity were investigated by transmission electron microscopy analysis and reveal the porous structure initiates as small spherical voids with approximately 3 nm in diameter. The evolution of porosity was investigated by scanning electron microscopy images, which show that film thickness increases up to 16 times with increasing irradiation fluence. Here we show that amorphous InSb films become polycrystalline foams upon irradiation with 17 MeV Au+7 ions at fluences above 1014 cm−2. The films attain a zincblende phase, with crystallites randomly oriented, similarly to the polycrystalline structure attained by thermal annealing of unirradiated films. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

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