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  • The Electrochemical Society Wet Etching Technology for Semiconductor and Solar Silicon Manufacturing: Part 2 - Process, Equipment and Implementation

    2020-01-20

    Wet etching is an important step in the manufacturing of semiconductor and solar wafers and for the production of MEMS devices. While it has been replaced by the more precise dry etching technology in advanced semiconductor device fabrication, it still plays an important role in the manufacture of the silicon substrate itself. It is also used for providing stress relief and surface texturing of solar wafers in high volume. The technology of wet etching silicon for semiconductor and solar applications will be reviewed. Impact on this step for wafer properties and critical parameters (flatness, topology and surface roughness for semiconductor wafers, surface texture and reflectance for solar wafers) will be presented. The rationale for the use of a etching technology and etchant for specific applications in semiconductor and solar wafer manufacturing will be presented. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

  • Characterization of 4H-SiC Homoepitaxial Films on Porous 4H-SiC from Bis(trimethylsilyl)methane Precursor

    2020-01-13

    4H-SiC homoepitaxial films were grown on 8° off-axis porous 4H-SiC (0001) faces in the temperature range of  by chemical vapor deposition from bis(trimethylsilyl)methane (BTMSM) precursor. The activation energy for growth was 5.6 kcal/mol, indicating that the film growth is dominated by the diffusion-limited mechanism. Triangular stacking faults were incorporated in the SiC thin film grown at low temperature of 1280°C due to the formation of 3C-SiC polytype. Moreover, super-screw dislocations appeared seriously in the SiC film grown below 1320°C. Clean and featureless morphology was observed in the SiC film grown below 25 standard cubic centimeters per minute (sccm)  carrier gas flow rate of BTMSM at 1380°C while 3C-SiC polytype with double positioning boundaries grew at 30 sccm flow rate of BTMSM. The dislocation density of the epi layer was strongly influenced by the growth temperature and flow rate of BTMSM. Double axis crystal X-ray diffraction and optical microscopy analysis revealed that the dislocation density decreased at the higher growth temperature and lower flow rate of BTMSM. The full width at half maximum of the rocking curve of the film grown at optimized condition was 7.6 arcsec and the sharp free exciton and Al bound exciton lines appear in the epi layer, which indicates  Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

  • Density Functional Theory Study of the Stress Impact on Formation Enthalpy of Intrinsic Point Defect around Dopant Atom in Ge Crystal

    2020-01-07

    During the last decade, the use of single crystal germanium (Ge) layers and structures in combination with silicon (Si) substrates has led to a revival of defect research on Ge. In Si crystals, dopants and stresses affect the intrinsic point defect (vacancy V and self-interstitial I) parameters and thus change the thermal equilibrium concentrations of V and I Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

  • Current-injected light emission of epitaxially grown InAs/InP quantum dots on directly bonded InP/Si substrate

    2019-12-30

    Current-injected light emission was confirmed for metal organic vapor phase epitaxy (MOVPE) grown (Ga)InAs/InP quantum dots (QDs) on directly bonded InP/Si substrate. The InP/Si substrate was prepared by directly bonding of InP thin film and a Si substrate using a wet-etching and annealing process. A p–i–n LED structure including Stranski–Krastanov (Ga)InAs/InP QDs was grown by MOVPE on an InP/Si substrate. No debonding between Si substrate and InP layer was observed, even after MOVPE growth and operation of the device under continuous wave conditions at RT. The photoluminescence, current/voltage, and electroluminescence characteristics of the device grown on the InP/Si substrate were compared with reference grown on an InP substrate. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

  • Gas Source MBE Growth of GaSb

    2019-12-24

    3333 Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

  • Effects of Drying Methods and Wettability of Silicon on the Formation of Water Marks in Semiconductor Processing

    2019-12-16

    Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

  • A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended Si Wafer by Conventional Chemical Vapor Deposition

    2019-12-09

    Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

  • Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars

    2019-12-02

    Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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