Home / Services / knowledge / 3.Definitions of Silicon Carbide Epitaxy
3.Definitions of Silicon Carbide Epitaxy
  • 3-1. Large Point Defects


    Defects which exhibit a clear shape to the unassisted eye and are > 50 microns across. These features include spikes, adherent particles, chips and craters. Large point defects less than 3 mm apart count as one defect.

  • 3-2. Scratches


    Grooves or cuts below the surface plane of the wafer having a length-to-width ratio of greater than 5 to 1. Scratches are speci ed by the number of discrete scratches times the total length in fractional diameter.

  • 3-3. Dimpling


    A texture resembling the surface of a golf ball. Speci ed in % affected area.

  • 3-4. Step Bunching


    Step bunching is visible as a pattern of parallel lines running perpendicular to the major  at. If present, estimate the % of speci ed area affected.

  • 3-5. Backside Cleanliness


    Veri ed by inspecting for a uniform color to the wafer backside. Note there is a darker region near the center of some higher doped wafers. Backside cleanliness speci ed as percent area clean.

  • 3-6. Edge Chips


    Areas where material has been unintentionally removed from the wafer.Do not confuse fractures in epi crown with edge chips.

  • 3-7. ID Correct and Major Wafer Flat


    Both should be readily discernible.

  • 3-8. 3C Inclusions


    Regions where step- ow was interrupted during epi layer growth. Typical regions are generally triangular although more rounded shapes are sometimes seen. Count once per occurrence. Two inclusions within 200 microns count as one.

First 1 2 >> Last
[  A total of  2  pages]

Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.