We can offer Layer structure of 703nm Laser as follows:
Layer |
Composition |
Thickness (um) |
Doping(cm-3) |
Cap |
P+- GaAs |
0.2 |
Zn:>1e19 |
Cladding |
p - Al0.8Ga0.2As |
1 |
Zn:1e18 |
Etch stop |
GaInP |
0.008 |
Zn:1e18 |
Top barrier |
Al0.45Ga0.55As |
0.09 |
Undoped |
Well |
Al0.18Ga0.82As |
0.004 |
Undoped |
Barrier |
Al0.45Ga0.55As |
0.01 |
Undoped |
Well |
Al0.18Ga0.82As |
0.004 |
Undoped |
Barrier |
Al0.45Ga0.55As |
0.01 |
Undoped |
Well |
Al0.18Ga0.82As |
0.004 |
Undoped |
Bottom barrier |
Al0.45Ga0.55As |
0.09 |
Undoped |
Cladding |
n - Al0.8Ga0.2As |
1.4 |
Si:1e18 |
Buffer |
n - GaAs |
0.5 |
Si:1e18 |
Substrate |
n+ - GaAs |
|
S :>1e18 |
Source:PAM-XIAMEN
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send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.