PAM-XIAMEN provides InGaAsN epitaxially on GaAs or InP wafers as follows:
Layer
Doping
Thickness (um)
Remark
GaAs
undoped
~500
wafer
substrate
InGaAsN*
undoped
0.150
band gap <1 eV
Al(0.3)Ga(0.7)As
undoped
0.5
GaAs
undoped
2
Al(0.3)Ga(0.7)As
undoped
0.5
ITEM
x/y
Doping
carrier
conc.(cm3)
Thickness(um)
wave
length(um)
Lattice
mismatch
InAs(y)P
0.25
none
5.0*10^16
1.0
-
In(x)GaAs
0.63
none
1.0*10^17
3.0
1.9
600<>600
InAs(y)P
0.25
S
1.0*10^18
205.0
-
InAs(y)P
0.05->0.25
S
1.0*10^18
4.0
-
InP
-
S
1.0*10^18
0.3
-
Substrate:InP
S
(1-3)*10^18
~350
-
Source:PAM-XIAMEN
For more information, please visit our website:http://www.powerwaywafer.com/,
send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.