Products

Thanks to MOCVD and MBE technology,PAM-XIAMEN, a epitaxial wafer supplier, offers epitaxial wafer products, including GaN epitaxial wafer, GaAs epitaxial wafer, SiC epitaxial wafer, InP epitaxial wafer, and now we give a brief introduction as follows:

1)GaN epitaxial growth on sapphire template;

Conduction Type: Si doped (N+)

Thickness:4um,20um,30um,50um,100um

Orientation: c-axis (0001) ± 1.0°

Resistivity: <0.05 Ohm.cm

Dislocation Density:<1x108cm-2

Substrate Structure: GaN on Sapphire(0001)

Front Surface Finish (Ga-face): As-grown

Back Surface Finish: SSP or DSP

Usable Area: ≥ 90 %

Available Sizes: 2” (50.8 mm), 3” (76.2 mm) and 4” (100 mm)

Available Grades: Production, Research and Rider

2)AlN epitaxial growth on sapphire template;

Conduction Type: semi-insulating

Thickness:50-1000nm+/- 10%

Orientation: C-axis(0001)+/-1O

Orientation Flat:A-plane

XRD FWHM of (0002):<200 arcsec

Substrate Structure: AlN on sapphire

Back Surface Finish: SSP or DSP,epi-ready

Usable Area: ≥ 90 %

Available Sizes: 2” (50.8 mm),

Available Grades: Production, Research and Rider

3）AlGaN epitaxial growth on sapphire, including HEMT structure;

Conduction Type: semi-insulating

Thickness:50-1000nm+/- 10%

Orientation: C-axis(0001)+/-1O

Orientation Flat:A-plane

XRD FWHM of (0002):<200 arcsec

Substrate Structure: AlGaN on sapphire

Back Surface Finish: SSP or DSP,epi-ready

Usable Area: ≥ 90 %

Available Sizes: 2” (50.8 mm),

Available Grades: Production, Research and Rider

4）LT-GaAs epi layer on GaAs substrate

Diamater(mm):Ф 50.8mm ± 1mm

Thickness:1-2um or 2-3um

Marco Defect Density:≤ 5 cm-2

Resistivity(300K):>108 Ohm-cm

Carrier:＜0.5ps

Dislocation Density:<1x106cm-2

Useable Surface Area:≥80%

Polishing:Single side polished

Substrate:GaAs substrate

5）GaAs Schottky Diode Epitaxial Wafers

6）GaAs HEMT epi wafer

1) 4" SI substrate GaAs with [100] orientation,

2) [buffer] superlattice of Al(0.3)Ga(0.7)As/GaAs with thicknesses

10/3 nm, repeat 170 times,

3) barrier Al(0.3)Ga(0.7)As 400 nm,

4) quantum well GaAs 20 nm,

5) spacer Al(0.3)Ga(0.7)As 15 nm,

6) delta-doping with Si to create electron density 5-6*10^11 cm^(-2),

7) barrier Al(0.3)Ga(0.7)As 180 nm,

8) cap layer GaAs 15nm.

7）InP epitaxial wafer:

InP Substrate:

P/E 2"dia×350+/-25um,

n-type InP:S

(100)+/-0.5°,

EDP<1E4/cm2.

One-side-polished, back-side matte etched, SEMI Flats.

EPI layer :

Epi 1: InGaAs:(100)

Thickness:100nm,

etching stop layer

Epi 2: InP:(100)

Thickness:50nm,

bonding layer

8）Blue LED wafer

p-GaN/p-AlGaN/InGaN/GaN/n-GaN/u-GaN

p-GaN 0.2um

p-AlGaN 0.03um

InGaN/GaN(active area) 0.2um

n-GaN 2.5um

Etch stop   1.0um

u- GaN (buffer) 3.5um

Al2O3 (Substrate) 430um

9）Green LED wafer

1.Sapphire substrate:430um

2.Buffer layer:20nm

3.Undoped GaN:2.5um

4.Si doped GaN 3um

5.Quantum well light emtting area:200nm

6.Electron barrier layer 20nm

7.Mg DOPED GaN 200nm

8.Surface contact 10nm

Related Products:

InGaN epitxial growth on sapphire.

AlGaP/GaAs Epi Wafer for Solar Cell

GaAs Based Epitaxial Wafer for LED and LD

GaAs pHEMT epi wafer

GaAs mHEMT epi wafer

GaAs HBT epi wafer

InGaAs/InP epi wafer for PIN

InP/InGaAs/InP epi wafer

SiC epitaxial wafer:

Source: semiconductorwafers.net

For more information, please visit our website: www.semiconductorwafers.net,

send us email at luna@powerwaywafer.com or powerwaymaterial@gmail.com.