Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers  InSb crystal wafer up to 3" in diameter that are grown by a modified Czochralski method from highly purified, zone refined polycrystalline ingots.

1)2"InSb

Orientation：(100)

Type/Dopant:N/undoped

Diameter:50.8mm

Thickness:300±25µm;500um

Nc:<2E14a/cm3

Polish:SSP

2)2"InSb

Orientation：(100)

Type/Dopant:N/Te

Diameter:50.8mm

Carrier Concentration: 0.8 – 2.1 x 1015 cm-3

Thickness:450+/- 25 um;525±25µm

EPD < 200 cm-2

Polish:SSP

3)2"InSb

Orientation：(111) + 0.5°

Thickness:450+/- 50 um

Type/Dopant:N/undoped

Carrier Concentration:  < 5 x 10^14 cm-3

EPD < 5 x 103 cm-2

Surface roughness: < 15 A

Bow/Warp: < 30 um

Polish:SSP

4)2"InSb

Orientation：(111) + 0.5°

Type/Dopant:P/Ge

Polish:SSP

5)2"InSb

Thickness:525±25µm,

Orientation：[111A]±0.5°

Type/Dopant:N/Te

Ro=(0.020-0.028)Ohmcm,

Nc=（4-8）E14cm-3/cc,

u=(4.05E5-4.33E5)cm²/Vs,

EPD<100/cm²,

Mobility:4E5cm2/Vs

One side edge;

In(A) Face: Chemically-mechanically final polished to 0.1µm (Final Polish),

Sb(B) Face: Chemically-mechanically final polished to <5µm (Lasermark),

NOTE: Nc and Mobility are at 77ºK.

Polish:SSP;DSP

6)2" GaSb

Thickness:525±25µm,

Orientation：[111B]±0.5°,

Type/Dopant:P/undoped;N/undoped

Polish:SSP;DSP

Surface Condition and other Specification

Indium Antimonide (InSb) wafer can be offered as wafers with as-cut, etched or polished finishes with wide range of doping concentration and thickness. The wafer could be high quality epi-ready finishing.

Orientation Specification

Wafer surface orientations are supplied to an accuracy of +/- 0.5 degrees using a triple axis X-Ray diffractometer system. Substrates can also be supplied with very precise misorientations in any direction from the growth plane. The available orientaiton could be (100),(111), (110) or other orientation or mis degree.

Packaging condition

Polished wafer:individually sealed in two outer bags in inert atmosphere. Cassette shipments are available if required).

As-cut Wafer:Cassette shipment. (Glassine bag available on request).

Words Wiki

Indium antimonide (InSb) wafer is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductormaterial from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidancesystems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiationsource as it is a strong photo-Dember emitter.

Relative products:

InAs wafer

InSb wafer

InP wafer

GaAs wafer

GaSb wafer

GaP wafer

Source: semiconductorwafers.net

For more information, please visit our website:http://www.semiconductorwafers.net,

send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.