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Wet Chemical Surface Passivation of Germanium Wafers by Quinhydrone–Methanol Treatment for Minority Carrier Lifetime Measurements

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Wet Chemical Surface Passivation of Germanium Wafers by Quinhydrone–Methanol Treatment for Minority Carrier Lifetime Measurements

2018-11-26

We have applied quinhydrone/methanol (Q/M) treatment to germanium (Ge) surfaces and shown that this treatment is also effective for passivating Ge surfaces for minority carrier lifetime measurements. Surface recombination velocity (S) of less than 20 cm/s has been obtained, which enables us to accurately evaluate the bulk lifetime of minority carriers, τb, in Ge wafer. To the best of our knowledge, this is the first report on wet chemical treatment successfully applied to Ge surfaces achieving low values of S.


source:iopscience


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