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Indium Semiconductor Wafer

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Indium Semiconductor Wafer

2017-12-21

Indium Semiconductor Wafer

InAs wafer Substrate- Indium Arsenide
Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD
PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2
1-100 InAs 110 40 500 SSP N/A P (1-9)E17 N/A N/A
1-100 InAs 100 50.8 450 SSP N/A P 1E17/cc N/A < 20000
1-100 InAs 100 50.8 400 SSP N/A N/S 5E18-2E19 >6,000 <1E4
1-100 InAs 100 50.8 400 DSP N/A N/S 5E18-2E19 >6,000 <1E4
1-100 InAs (111)B 50.8 N/A SSP N/A N/S (1-3)E18 N/A N/A
1-100 InAs 100 50.8 N/A SSP N/A N/Te 1E16/cc N/A N/A
1-100 InAs 100 50.8 400 DSP N/A P (1-9)E18/cc N/A N/A
1-100 InAs 100 3x3x5 N/A N/A N/A N/A 3E16/cc N/A N/A
As a InAs wafer supplier,we offer InAs wafer list for your reference, if you need price detail, please contact our sales team

Note:

*** As manufacturer, we also accept small quantity for researcher or foundry.

***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.


InP Wafer Substrate- Indium Phosphide
Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD
PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2
1-100 InP 111 25.4 300 N/A N/A N/A <3E16 >3500 <3E4
1-100 InP 100 50.8 400±10 SSP NA N/ (5-50)E15 NA < 20000
1-100 InP 111 50.8 400±10 SSP NA P/Zn ~1E19 NA < 20000
1-100 InP 100 50.8 400 SSP NA N/ ~5E17 NA NA
1-100 InP (111)A 50.8 N/A N/A N/A P/Zn ~5E18 NA NA
1-100 InP (111)±0.5° 50.8 350 SSP >1E7 Undoped (1-10)E7 >2000 <3E4
1-100 InP (100)/(111) 50.8 350-400 SSP NA N (1-3)E18 NA NA
1-100 InP 111 50.8 500±25 SSP NA Undoped NA NA NA
1-100 InP (111)A 50.8 500 SSP >1E7 Undoped N/A N/A N/A
1-100 InP (111)A 50.8 500±25 SSP NA Undoped NA NA NA
1-100 InP (111)B 50.8 500±25 SSP NA Undoped NA NA NA
1-100 InP 110 50.8 400±25 SSP N/A P/Zn  N/S NA NA NA
1-100 InP 110 50.8 400±25 DSP N/A P/Zn  N/S NA NA NA
1-100 InP (110)±0.5 50.8 400±25 SSP N/A N/A N/A N/A N/A
1-100 InP (100)±0.5 50.8 350±25 SSP N/A p/zn N/A N/A N/A
1-100 InP N/A 50.8 500 N/A N/A N/A N/A N/A N/A
1-100 InP (111)B 50.8 400±25 N/A >1E4 N/Te NA NA NA
1-100 InP (211)B 50.8 400±25 N/A >1E4 N/Te NA NA NA
1-100 InP (311)B 50.8 400±25 N/A >1E4 N/Te NA NA NA
1-100 InP 111 50.8 N/A SSP N/A N (1-9)E18 NA NA
1-100 InP N/A 50.8 4000±300 N/A N/A N/A undoped N/A N/A
1-100 InP 100 50.8 500±25 SSP N/A N/s (1-9)E18 N/A N/A
1-100 InP 100 50.8 500±25 SSP N/A N/s ~3E17 N/A N/A
1-100 InP (100)/(111) 76.2 600 SSP NA N (1-3)E18 NA NA
1-100 InP (100)±0.5 76.2 600±25 SSP NA Undoped <3E16 >3500 <3E4
1-100 InP 100 76.2 400-600 DSP NA Undoped/Fe NA NA NA
1-100 InP 100 76.2 600±25 SSP NA N/A N/S N/A N/A
1-100 InP 100 76.2 600±25 SSP NA N/A N/A N/A N/A
1-100 InP 100 76.2 675±25 DSP NA N/A (3-6)E18 N/A N/A
1-100 InP 100 76.2 600±25 DSP NA N/A 2.00E+18 e N/A
1-100 InP 100 76.2 600±25 DSP NA N/A N/A N/A N/A
1-100 InP 111 10x10 500±25 SSP NA Undoped N/A N/A N/A
1-100 InP N/A 30-40 N/A N/A N/A N/A N/A N/A N/A
1-100 InP (100)2°off+/-0.1 degree t.n. (110) 50±0.2 500±20 SSP ≥1E7 SI/Fe N/A ≥2000 ≤5000
As a InP wafer supplier,we offer InP wafer list for your reference, if you need price detail, please contact our sales team

Note:

*** As manufacturer, we also accept small quantity for researcher or foundry.

***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.


InSb Wafer Substrate- Indium Antimonide
Quantity Material Orientation. Diameter Thickness Polish Resistivity Type   Dopant Nc Mobility EPD
PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2
1-100 InSb 100 50.8 500 SSP N/A N/undoped <2E14 N/A N/A
1-100 InSb 100 50.8 500 N/A N/A N/A N/A N/A N/A
As a InSb wafer supplier,we offer InSb wafer list for your reference, if you need price detail, please contact our sales team

Note:

*** As manufacturer, we also accept small quantity for researcher or foundry.

***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.

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