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Gas Source MBE Growth of GaSb

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Gas Source MBE Growth of GaSb

2019-12-24

Gas source molecular beam epitaxal growth of GaSb is investigated. Sb(CH3)3 is found to decompose effectively when the cracking furnace temperature is higher than 800°C. A mirror-like GaSb epi-layer is shown to be obtainable using Sb(CH3)3 and a solid Ga source for the first time.

Source:IOPscience

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