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Gas Source MBE Growth of GaSb


Gas Source MBE Growth of GaSb


Gas source molecular beam epitaxal growth of GaSb is investigated. Sb(CH3)3 is found to decompose effectively when the cracking furnace temperature is higher than 800°C. A mirror-like GaSb epi-layer is shown to be obtainable using Sb(CH3)3 and a solid Ga source for the first time.


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