The process to decrease the dislocation density in 3-inch Fe-doped InP wafers is described. The crystal growth process is a conventional liquid encapsulated Czochralsky (LEC) but thermal shields have been added in order to decrease the thermal gradient in the growing crystal. The shape of these shields has been optimized with the help of numerical simulations of heat transfer and thermomechanical ...
The development of SiC and GaN power semiconductor market The current state of SiC technology and market, and the development trend in the next few years. The SiC device market is promising. Sales of Schottky barrier diodes have matured and MOSFET shipments are expected to increase significantly over the next three years. According to Yole Développement analysts, SiC is very mature in terms of dio...
In this paper, using a fully-coupled, three-dimensional electro-thermal device simulator, we study the mechanism of efficiency degradation at high current operation in planar GaN-based light emitting diodes (LED). In particular, the improvement of the efficiency degradation using thicker conductive GaN substrates has been demonstrated. First, it is found that local Joule heating inside thin conduc...
The bonding-temperature-dependent lasing characteristics of 1.5 a µm GaInAsP laser diode (LD) grown on a directly bonded InP substrate or Si substrate were successfully obtained. We have fabricated the InP substrate or Si substrate using a direct hydrophilic wafer bonding technique at bonding temperatures of 350, 400, and 450 °C, and deposited GaInAsP or InP double heterostructure layers on this I...
A vertical hot-wall epi-reactor that makes it possible to simultaneously achieve a high growth rate and large-area uniformity has been developed. A maximum growth rate of 250 µm/h is achieved with a mirror-like morphology at 1650 °C. Under a modified epi-reactor setup, a thickness uniformity of 1.1% and a doping uniformity of 6.7% for a 65-mm-radius area are achieved while maintaining a high growt...
We have improved the efficiency of photoconductive antennas (PCAs) using low-temperature-grown GaAs (LT-GaAs). We found that the physical properties of LT-GaAs photoconductive layers greatly affect the generation and detection characteristics of terahertz (THz) waves. In THz generation, high photoexcited carrier mobility and the presence of a few As clusters in the LT-GaAs are two important factor...
The recent advances in epitaxial SiC films' growth on Si are overviewed. The basic classical methods currently used for SiC films' growth are discussed and their advantages and disadvantages are explored. The basic idea and the theoretical background for a new method of the synthesis of epitaxial SiC films on Si are given. It will be shown that the new method is significantly different from the cl...