Te-doped GaSb single crystals are studied by measuring Hall effect, infrared (IR) transmission and photoluminescence (PL) spectra. It is found that the n-type GaSb with IR transmittance can be obtained as high as 60% by the critical control of the Te-doping concentration and electrical compensation. The concentration of the native acceptor-associated defects is apparently low in the Te-doped GaSb ...
In this paper, using a fully-coupled, three-dimensional electro-thermal device simulator, we study the mechanism of efficiency degradation at high current operation in planar GaN-based light emitting diodes (LED). In particular, the improvement of the efficiency degradation using thicker conductive GaN substrates has been demonstrated. First, it is found that local Joule heating inside thin conduc...
Orthogonal experiments of GaSb films growth on GaAs substrate have been designed and performed by using a low-pressure metal–organic chemical vapor deposition (LP-MOCVD) system. The crystallinities and microstructures of the produced films were comparatively analyzed to achieve the optimum growth parameters. It was demonstrated that the optimized GaSb thin film has a narrow full width at half maxi...
The recent advances in epitaxial SiC films' growth on Si are overviewed. The basic classical methods currently used for SiC films' growth are discussed and their advantages and disadvantages are explored. The basic idea and the theoretical background for a new method of the synthesis of epitaxial SiC films on Si are given. It will be shown that the new method is significantly different from the cl...