The development of SiC and GaN power semiconductor market The current state of SiC technology and market, and the development trend in the next few years. The SiC device market is promising. Sales of Schottky barrier diodes have matured and MOSFET shipments are expected to increase significantly over the next three years. According to Yole Développement analysts, SiC is very mature in terms of dio...
In this paper, using a fully-coupled, three-dimensional electro-thermal device simulator, we study the mechanism of efficiency degradation at high current operation in planar GaN-based light emitting diodes (LED). In particular, the improvement of the efficiency degradation using thicker conductive GaN substrates has been demonstrated. First, it is found that local Joule heating inside thin conduc...
For homogeneous materials, the ultrasonic immersion method, associated with a numerical optimization process mostly based on Newton's algorithm, allows the determination of elastic constants for various synthetic and natural composite materials. Nevertheless, a principal limitation of the existing optimization procedure occurs when the considered material is at the limit of the homogeneous hypothe...
A vertical hot-wall epi-reactor that makes it possible to simultaneously achieve a high growth rate and large-area uniformity has been developed. A maximum growth rate of 250 µm/h is achieved with a mirror-like morphology at 1650 °C. Under a modified epi-reactor setup, a thickness uniformity of 1.1% and a doping uniformity of 6.7% for a 65-mm-radius area are achieved while maintaining a high growt...