FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)
Polished wafer
FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)
Our advantages at a glance
1.Advanced epitaxy growth equipment and test equipment.
2.Offer the highest quality with low defect density and good surface roughness.
3.Strong research team support and technology support for our customers
FZ polished wafers Specifications
|
Type |
Conduction type |
Orientation |
Diameter scope(mm) |
Resistivity scope(Ω cm) |
Geometric parameter graininess,surface metal |
|
FZ |
N&P |
<100>&<111> |
76.2-200 |
>1000 |
T≥260（um） TTV≤2（um） TIR≤2（um） STIR≤1（um）(20*20) Graininess≤10pcs(≥0.3um) , ≤20pcs(≥0.2um) Surface metal≤5E10/cm2 BSD:Etchpit density>1E106pcs/cm2 Poly:5000-12000 A |
|
NTDFZ |
N |
<100>&<111> |
76.2-200 |
30-800 |
|
|
CFZ |
N&P |
<100>&<111> |
76.2-200 |
1-50 |
|
|
GDFZ |
N&P |
<100>&<111> |
76.2-200 |
0.001-300 |
CZ polished wafers Specifications
Type
Conduction type
Orientation
Diameter
scope(mm)
Resistivity
scope(Ω cm)
Geometric
parameter graininess,surface metal
MCZ
N&P
<100>
<110>&<111>
76.2-200
1-300
T≥260（um） TTV≤2（um） TIR≤2（um）
STIR≤1（um）(20*20) Graininess≤10pcs(≥0.3um) ， ≤20pcs(≥0.2um) Surface metal≤5E10/cm2 BSD:Etchpit density>1E106pcs/cm2 LTO:3500~8000±250A
CZ
N&P
<100>
<110>&<111>
76.2-200
1-300
MCZ heavily
doped
N&P
<100>&<111>
76.2-200
0.001-1
FZ-Silicon The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce 1
PAM-XIAMEN Offers Dummy Wafer / Test Wafer / Monitor Wafer
CZ-Silicon The heavily/lightly-doped CZ mono-crystalline silicon is suitable for producing various integrated circuits (IC), diodes, triodes, green-energy solar panel. The special elements (such as Ga, Ge) can be added to produce the high-efficiency, radiation-resistant and anti-degenerating solar cell materials for special components.
Silicon Epitaxial Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer,but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epit1
The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, to reduce the costs. There are the low-roughness, low-reflectivity and high-reflectivity etching wafers.
PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.
Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.
PAM offers semiconductor materials,single crystal (Ge)Germanium Wafer grown by VGF / LEC
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
