Xiamen Powerway offers InAs wafer - Indium arsenide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Xiamen Powerway offers InAs wafer - Indium arsenide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Indium arsenide, InAs, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C.[2]Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
Indium arsenide is similar to gallium arsenide and is a direct bandgap material. Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitridewith gallium nitride to yield indium gallium nitride.
| Wafer Specification | |
| Item | Specifications |
| Wafer Diameter |
2"50.5±0.5mm 3"76.2±0.4mm |
| Crystal Orientation | (100)±0.1° |
| Thickness |
2"500±25um 3" 625±25um |
| Primary flat length |
2"16±2mm 3"22±2mm |
| Secondary flat length |
2"8±1mm 3"11±1mm |
| Surface Finish | P/E, P/P |
| Package | Epi-Ready,Single wafer container or CF cassette |
| Electrical and Doping Specification | |||||
| Conduction Type | n-type | n-type | n-type | p-type | p-type |
| Dopant | Undoped | Low Sulphur | High Sulphur | Low Zinc | High Zinc |
| E.D.P cm-2 |
2"≤15,000 3"≤50,000 |
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| Mobility cm² V-1s-1 | ≥23000 | 25000-15000 | 12000-7000 | 350-200 | 250-100 |
| Carrier Concentration cm-3 | （1-3）*1016 | （4-8）*1016 | （1-3）*1018 | （1-3）*1017 | （1-3）*1018 |
Xiamen Powerway offers InSb wafer - Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Xiamen Powerway offers InP wafer - Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Xiamen Powerway offers GaP wafer - gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Xiamen Powerway offers GaSb wafer - gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100)
PAM-XIAMEN Offers Photomasks A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process1
PAM-XIAMEN Offers Dummy Wafer / Test Wafer / Monitor Wafer
Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate,X-ray detectors and Gamma-ray detectors, laser optical modulation, high-performance solar cells and other high-tech fields.
PAM-XIAMEN's GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
