Xiamen Powerway offers InAs wafer - Indium arsenide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Xiamen Powerway offers InAs wafer - Indium arsenide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Indium arsenide, InAs, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C.[2]Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
Indium arsenide is similar to gallium arsenide and is a direct bandgap material. Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitridewith gallium nitride to yield indium gallium nitride.
| Wafer Specification | |
| Item | Specifications |
| Wafer Diameter |
2"50.5±0.5mm 3"76.2±0.4mm |
| Crystal Orientation | (100)±0.1° |
| Thickness |
2"500±25um 3" 625±25um |
| Primary flat length |
2"16±2mm 3"22±2mm |
| Secondary flat length |
2"8±1mm 3"11±1mm |
| Surface Finish | P/E, P/P |
| Package | Epi-Ready,Single wafer container or CF cassette |
| Electrical and Doping Specification | |||||
| Conduction Type | n-type | n-type | n-type | p-type | p-type |
| Dopant | Undoped | Low Sulphur | High Sulphur | Low Zinc | High Zinc |
| E.D.P cm-2 |
2"≤15,000 3"≤50,000 |
||||
| Mobility cm² V-1s-1 | ≥23000 | 25000-15000 | 12000-7000 | 350-200 | 250-100 |
| Carrier Concentration cm-3 | （1-3）*1016 | （4-8）*1016 | （1-3）*1018 | （1-3）*1017 | （1-3）*1018 |
Xiamen Powerway offers InSb wafer - Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Xiamen Powerway offers InP wafer - Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Xiamen Powerway offers GaP wafer - gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Xiamen Powerway offers GaSb wafer - gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100)
Silicon Epitaxial Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer,but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epit1
We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications.please contact us for more information.
Xiamen Powerway offers InP wafer - Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
