GaN based LED Epitaxial Wafer

GaN(gallium nitride) based LED Epitaxial Wafer

As LED wafer manufacturer,we offer LED wafer for LED and laser diodes (LD) application,such as For micro LED or ultra thin wafer or UV LED researches or LED manufacturers.it is by MOCVD with PSS or flat sapphire for LCD back light, mobile,electronic or UV(ultraviolet), with blue or green or red emission,including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.

GaN on Al2O3-2” epi wafer Specification(LED Epitaxial wafer)

1. Growth Technique - MOCVD

2.Wafer diameter: 50.8mm

3.Wafer substrate material: Patterned Sapphire Substrate(Al2O3)

4.Wafer pattern size: 3X2X1.5μm

5.Wafer structure:

6.Wafer parameters to make chips:

*If you need to know more detail information of Blue LED Chip, please contact with our sales departments

7.Application of LED epitaixal wafer:

Lighting

LCD back light

Mobile appliances

Consumer electronic

PAM-XIAMEN's GaN-based epitaxial wafers(Epi Wafer) is for ultra high brightness blue and green light emitting diodes (LED)

GaAs(Gallium arsenide)based LED Wafer:

Regarding GaAs LED wafer, they are grown by MOCVD,see below wavelength of GaAs LED wafer:

For these detail GaAs LED wafer specs,please visit:GaAs Epi Wafer for LED

*Laser Structure on 2 inch GaN (0001) substrate or sapphire substrate is available.

Remark：
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!