silicon carbide or silicon.PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial device layers, with better structural quality and higher thermal conductivity,which can improve devices in the cost, yield, and performance.
MOQ :
1GaN(gallium nitride ) Templates
PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial device layers, with better structural quality and higher thermal conductivity,which can improve devices in the cost, yield, and performance.
2" GaN Templates Epitaxy on Sapphire Substrates
Item |
PAM-2inch-GaNT-N |
PAM-2inch-GaNT-SI |
|
Conduction Type |
N-type |
Semi-insulating |
|
Dopant |
Si doped or undoped |
Fe doped |
|
Size |
2"(50mm) dia. |
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Thickness |
4um,20um,30um,50um,100um |
30um,90um |
|
Orientation |
C-axis(0001)+/-1O |
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Resistivity(300K) |
<0.05Ω·cm |
>1x106Ω·cm |
|
Dislocation Density |
<1x108cm-2 |
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Substrate Structure |
GaN on Sapphire(0001) |
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Surface Finish |
Single or Double Side Polished,epi-ready |
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Usable Area |
≥ 90 % |
2" GaN Templates Epitaxy on Sapphire Substrates
Item |
PAM-GaNT-P |
Conduction Type |
P-type |
Dopant |
Mg doped |
Size |
2"(50mm) dia. |
Thickness |
5um,20um,30um,50um,100um |
Orientation |
C-axis(0001)+/-1O |
Resistivity(300K) |
<1Ω·cm or custom |
Dopant Concentration |
1E17(cm-3) or custom |
Substrate Structure |
GaN on Sapphire(0001) |
Surface Finish |
Single or Double Side Polished,epi-ready |
Usable Area |
≥ 90 % |
3"GaN Templates Epitaxy on Sapphire Substrates
Item |
PAM-3inch-GaNT-N |
|
Conduction Type |
N-type |
|
Dopant |
Si doped or undoped |
|
Exclusion Zone: |
5mm from outer diameter |
|
Thickness: |
20um,30um |
|
Dislocation density |
< 1x108cm-2 |
|
Sheet resistance (300K): |
<0.05Ω·cm |
|
Substrate: |
sapphire |
|
Orientation : |
C-plane |
|
Sapphire thickness: |
430um |
|
Polishing: |
Single side Polished,epi-ready, with atomic steps. |
|
Backside coating: |
(custom)high quality Titanium coating, thickness > 0.4 μm |
|
Packing: |
Individually packed under argon Atmosphere vacuum sealed in class 100 clean room. |
3"GaN Templates Epitaxy on Sapphire Substrates
Item |
PAM-3inch-GaNT-SI |
|
Conduction Type |
Semi-insulating |
|
Dopant |
Fe Doped |
|
Exclusion Zone: |
5mm from outer diameter |
|
Thickness: |
20um,30um,90um(20um is the best) |
|
Dislocation density |
< 1x108cm-2 |
|
Sheet resistance (300K): |
>106 ohm.cm |
|
Substrate: |
sapphire |
|
Orientation : |
C-plane |
|
Sapphire thickness: |
430um |
|
Polishing: |
Single side Polished,epi-ready, with atomic steps. |
|
Backside coating: |
(custom)high quality Titanium coating, thickness > 0.4 μm |
|
Packing: |
Individually packed under argon Atmosphere vacuum sealed in class 100 clean room. |
4"GaN Templates Epitaxial on Sapphire Substrates
Item |
PAM-4inch-GaNT-N |
Conduction Type |
N-type |
Dopant |
undoped |
Thickness: |
4um |
Dislocation density |
< 1x108cm-2 |
Sheet resistance (300K): |
<0.05Ω·cm |
Substrate: |
sapphire |
Orientation : |
C-plane |
Sapphire thickness: |
- |
Polishing: |
Single side Polished,epi-ready, with atomic steps. |
Packing: |
Individually packed under argon Atmosphere vacuum sealed in class 100 clean room. |
2" AlGaN, InGaN, AlN Epitaxy on Sapphire Templates: custom
2”AlN Epitaxy on Sapphire Templates
Item |
PAM-AlNT-SI |
|
Conduction Type |
semi-insulating |
|
Diameter |
Ф 50.8mm ± 1mm |
|
Thickness: |
1000nm+/- 10% |
|
Substrate: |
sapphire |
|
Orientation : |
C-axis(0001)+/-1O |
|
Orientation Flat |
A-plane |
|
XRD FWHM of (0002) |
<200 arcsec. |
|
Useable Surface Area |
≥90% |
|
Polishing: |
None |
2”InGaN Epitaxy on Sapphire Templates
Item |
PAM-INGAN |
|
Conduction Type |
- |
|
Diameter |
Ф 50.8mm ± 1mm |
|
Thickness: |
100-200nm, custom |
|
Substrate: |
sapphire |
|
Orientation : |
C-axis(0001)+/-1O |
|
Dopant |
In |
|
Dislocation Density |
~ 108 cm-2 |
|
Useable Surface Area |
≥90% |
|
Surface Finish |
Single or Double Side Polished,epi-ready |
2”AlGaN Epitaxy on Sapphire Templates
Item |
PAM-AlNT-SI |
|
Conduction Type |
semi-insulating |
|
Diameter |
Ф 50.8mm ± 1mm |
|
Thickness: |
1000nm+/- 10% |
|
Substrate: |
sapphire |
|
Orientation : |
C-plane |
|
Orientation Flat |
A-plane |
|
XRD FWHM of (0002) |
<200 arcsec. |
|
Useable Surface Area |
≥90% |
|
Polishing: |
None |
2"GaN on 4H or 6H SiC substrate
1)Undoped GaN buffer or AlN buffer are available; |
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2)n-type(Si doped or undoped), p-type or semi-insulating GaN epitaxial layers available; |
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3)vertical conductive structures on n-type SiC; |
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4)AlGaN – 20-60nm thick, (20%-30%Al), Si doped buffer; |
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5)GaN n-type layer on 330µm+/-25um thick 2” wafer. |
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6) Single or double side polished, epi-ready, Ra<0.5um |
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7)Typical value on XRD: |
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Wafer ID |
Substrate ID |
XRD(102) |
XRD(002) |
Thickness |
#2153 |
X-70105033 (with AlN) |
298 |
167 |
679um |
2" GaN on Silicon Substrate
1) GaN layer thickness:50nm-4um; |
2) N type or semi-insulating GaN are available; |
3) Single or double side polished, epi-ready, Ra<0.5um |
Hydride Vapour Phase Epitaxy (HVPE) process
Grown by HVPE process and technology for the production of compound semiconductors such as GaN, AlN, and AlGaN. They are used in a wide applications:solid state lighting, short wavelength optoelectronics and RF power device.
In the HVPE process, Group III nitrides (such as GaN, AlN) are formed by reacting hot gaseous metal chlorides (such as GaCl or AlCl) with ammonia gas (NH3). The metal chlorides are generated by passing hot HCl gas over the hot Group III metals. All reactions are done in a temperature controlled quartz furnace.