Silicon Epitaxial Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer,but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial layer)
Epitaxial Silicon Wafer
Silicon Epitaxial Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer,but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial layer)
The epitaxial layer can be doped, as it is deposited, to the precise doping concentration while continuing the substrate’s crystalline structure.
Epilayer resistivity: <1 ohm-cm up to 150 ohm-cm
Epilayer thickness: < 1 um up to 150 um
Structure: N/N+, N-/N/N+, N/P/N+, N/N+/P-, N/P/P+, P/P+, P-/P/P+.
Wafer Application: Digital, Linear, Power, MOS, BiCMOS Devices.
Our advantages at a glance
1.Advanced epitaxy growth equipment and test equipment.
2.Offer the highest quality with low defect density and good surface roughness.
3.Strong research team support and technology support for our customers
6″ Wafer specification:
|
Item |
|
Specification |
|
Substrate |
Sub spec No. |
|
|
Ingot growth method |
CZ |
|
|
Conductivity type |
N |
|
|
Dopant |
As |
|
|
Orientation |
(100)±0.5° |
|
|
Resistivity |
≤0.005Ohm.cm |
|
|
RRG |
≤15% |
|
|
[Oi] Content |
8~18 ppma |
|
|
Diameter |
150±0.2 mm |
|
|
Primary Flat Length |
55~60 mm |
|
|
Primary Flat Location |
{110}±1° |
|
|
Secondly Flat Length |
semi |
|
|
Secondly Flat Location |
semi |
|
|
Thickness |
625±15 um |
|
|
Backside Characteristics: |
|
|
|
1、BSD/Poly-Si(A) |
1.BSD |
|
|
2、SIO2 |
2.LTO:5000±500 A |
|
|
3、Edge Exclusion |
3.EE:?0.6 mm |
|
|
Laser Marking |
NONE |
|
|
Front surface |
Mirror polished |
|
|
Epi |
Structure |
N/N+ |
|
Dopant |
Phos |
|
|
Thickness |
3±0.2 um |
|
|
Thk.Uniformity |
≤5 % |
|
|
Measurement Position |
Center(1 pt) 10mm from edge(4 pts @90 degrees) |
|
|
Calculation |
[Tmax-Tmin]÷[[Tmax+Tmin]X 100% |
|
|
Resistivity |
2.5±0.2 Ohm.cm |
|
|
Res.Uniformity |
≤5 % |
|
|
Measurement Position |
Center(1 pt) 10mm from edge(4 pts @90 degrees) |
|
|
Calculation |
[Rmax-Rmin]÷[[Rmax+Rmin]X 100% |
|
|
Stack fault Density |
≤2（ea/cm2） |
|
|
Haze |
NONE |
|
|
Scratches |
NONE |
|
|
Craters、Orange Peel、 |
NONE |
|
|
Edge Crown |
≤1/3 Epi thickness |
|
|
Slip(mm) |
Total Length ≤ 1Dia |
|
|
Foreign Matter |
NONE |
|
|
Back Surface Contamination |
NONE |
|
|
Total Point Defects(particle) |
≤30@0.3um |
FZ-Silicon The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce 1
PAM-XIAMEN Offers Dummy Wafer / Test Wafer / Monitor Wafer
CZ-Silicon The heavily/lightly-doped CZ mono-crystalline silicon is suitable for producing various integrated circuits (IC), diodes, triodes, green-energy solar panel. The special elements (such as Ga, Ge) can be added to produce the high-efficiency, radiation-resistant and anti-degenerating solar cell materials for special components.
FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)
The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, to reduce the costs. There are the low-roughness, low-reflectivity and high-reflectivity etching wafers.
We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.
FZ-Silicon The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce 1
Xiamen Powerway offers GaP wafer - gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
