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GaAs (Gallium Arsenide) Wafers

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GaAs (Gallium Arsenide) Wafers

GaAs (Gallium Arsenide) Wafers

PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to  polishing processing and built a 100-class clean room for wafer cleaning and packaging.  Our GaAs wafer include  2~6 inch  ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.

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(GaAs) Gallium Arsenide Wafers


PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to  polishing processing and built a 100-class clean room for wafer cleaning and packaging.  Our GaAs wafer include  2~6 inch  ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.


(GaAs)Gallium Arsenide Wafers for LED Applications


Item

Specifications

Remarks

Conduction Type

SC/n-type

SC/p-type with Zn dope Available

Growth Method

VGF

Dopant

Silicon

Zn available

Wafer Diamter

2, 3 & 4 inch

Ingot or as-cut availalbe

Crystal Orientation

(100)20/60/150 off (110)

Other misorientation available

OF

EJ or US

Carrier Concentration

(0.4~2.5)E18/cm3

Resistivity at RT

(1.5~9)E-3 Ohm.cm

Mobility

1500~3000cm2/V.sec

Etch Pit Density

<5000/cm2

Laser Marking

upon request

Surface Finish

P/E or P/P

Thickness

220~450um

Epitaxy Ready

Yes

Package

Single wafer container or cassette


(GaAs)Gallium Arsenide Wafers for LD Applications


Item

Specifications

Remarks

Conduction Type

SC/n-type

Growth Method

VGF

Dopant

Silicon

Wafer Diamter

2, 3 & 4 inch

Ingot or as-cut available

Crystal Orientation

(100)20/60/150 off (110)

Other misorientation available

OF

EJ or US

Carrier Concentration

(0.4~2.5)E18/cm3

Resistivity at RT

(1.5~9)E-3 Ohm.cm

Mobility

1500~3000 cm2/V.sec

Etch Pit Density

<500/cm2

Laser Marking

upon request

Surface Finish

P/E or P/P

Thickness

220~350um

Epitaxy Ready

Yes

Package

Single wafer container or cassette


(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications


Item

Specifications

Remarks

Conduction Type

Insulating

Growth Method

VGF

Dopant

Undoped

Wafer Diamter

2, 3 & 4 inch

 Ingot available              

Crystal Orientation

(100)+/- 0.50

OF

EJ, US or notch

Carrier Concentration

n/a

Resistivity at RT

>1E7 Ohm.cm

Mobility

>5000 cm2/V.sec

Etch Pit Density

<8000 /cm2

Laser Marking

upon request

Surface Finish

P/P

Thickness

350~675um

Epitaxy Ready

Yes

Package

Single wafer container or cassette


6" (GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications


Item

Specifications

Remarks

Conduction Type

Semi-insulating

Grow Method

VGF

Dopant

Undoped

Type

N

Diamater(mm)

150±0.25

Orientation

(100)00±3.00

NOTCH Orientation

010±20

NOTCH Deepth(mm)

(1-1.25)mm   890-950

Carrier Concentration

N/A

Resistivity(ohm.cm)

1.0×10or 0.8-9 x10-3

Mobility(cm2/v.s)

N/A

Dislocation

N/A

Thickness(µm)

675±25

Edge Exclusion for Bow and Warp(mm)

N/A

Bow(µm)

N/A

Warp(µm)

≤20.0

TTV(µm)

10.0

TIR(µm)

≤10.0

LFPD(µm)

N/A

Polishing

P/P  Epi-Ready


2" LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications


Item

Specifications

Remarks

Diamater(mm)

Ф 50.8mm ± 1mm

Thickness

1-2um or 2-3um

Marco Defect Density

 5 cm-2

Resistivity(300K)

>108 Ohm-cm

Carrier

0.5ps

Dislocation Density

<1x106cm-2

Useable Surface Area

80%

Polishing

Single side polished

Substrate

GaAs Substrate


* We also can provide poly crystal GaAs bar, 99.9999%(6N).


Remark:
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!

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If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.

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Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.
   
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If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.