Freestanding GaN substrate

Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer  which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density.

Specification of Freestanding GaN substrate

Here shows detail specification:

2"Free-standing (gallium nitride) GaN Substrate

Back Surface:1.Fine ground  2.Rough grinded

Usable Area≥ 90 %

1.5"Free-standing GaN Substrate

Back Surface:1.Fine ground 2.Rough grinded

Usable Area≥ 90 %

15mm,10mm,5mm Free-standing GaN Substrate

Back Surface:1.Fine ground  2.Rough grinded

Usable Area≥ 90 %

Note:

Validation Wafer:Considering convenience of usage, PAM-XIAMEN offer 2" Sapphire Validation wafer for below 2" size Freestanding GaN Substrate

Application of GaN Substrate

Solid State Lighting:GaN devices are used as ultra high brightness light emitting diodes (LEDs), TVs, automobiles, and general lighting  

  DVD Storage: Blue laser diodes

Power Device: GaN devices are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN's low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites

Ideal for III-Nitrides re-growth

Wireless Base Stations: RF power transistors

Wireless Broadband Access: high frequency MMICs,RF-Circuits MMICs

Pressure Sensors:MEMS

Heat Sensors: Pyro-electric detectors

Power Conditioning: Mixed signal GaN/Si Integration

Automotive Electronics: High temperature electronics

Power Transmission Lines: High voltage electronics

Frame Sensors: UV detectors

Solar Cells:GaN's wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride

(InGaN) alloys perfect for creating solar cell material. Because of this advantage, InGaN solar cells grown on GaN substrates are poised to become one of the most important    new applications and growth market for GaN substrate wafers.

Ideal for HEMTs, FETs

GaN Schottky diode project: We accept custom spec of Schottky diodes fabricated on the HVPE-grown, free-standing gallium nitride (GaN) layers of n- and p-types.

Both contacts (ohmic and Schottky) were deposited on the top surface using Al/Ti and Pd/Ti/Au.      

Remark：
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!