Xiamen Powerway offers InSb wafer - Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Xiamen Powerway offers InSb wafer - Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras,FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiation source as it is a strong photo-Dember emitter.
| Wafer Specification | |
| Item | Specifications |
| Wafer Diameter |
2"50.5±0.5mm 3"76.2±0.4mm 4"1000.0±0.5mm |
| Crystal Orientation |
2"(111)AorB±0.1° 3"(111)AorB±0.1° 4"(111)AorB±0.1° |
| Thickness |
2"625±25um 3" 800or900±25um 4"1000±25um |
| Primary flat length |
2"16±2mm 3"22±2mm 4"32.5±2.5mm |
| Secondary flat length |
2"8±1mm 3"11±1mm 4"18±1mm |
| Surface Finish | P/E, P/P |
| Package | Epi-Ready,Single wafer container or CF cassette |
| Electrical and Doping Specification | |||||
| Conduction Type | n-type | n-type | n-type | n-type | p-type |
| Dopant | Undoped | Tellurium | Low tellurium | High tellurium | Genmanium |
| E.D.P cm-2 | 2"3"4"≤50 | 2"≤100 | |||
| Mobility cm² V-1s-1 | ≥4*105 | ≥2.5*104 | ≥2.5*105 | Not Specified | 8000-4000 |
| Carrier Concentration cm-3 | 5*1013-3*1014 | （1-7）*1017 | 4*1014-2*1015 | ≥1*1018 | 5*1014-3*1015 |
Xiamen Powerway offers InP wafer - Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Xiamen Powerway offers InAs wafer - Indium arsenide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Xiamen Powerway offers GaP wafer - gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Xiamen Powerway offers GaSb wafer - gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100)
Xiamen Powerway offers InP wafer - Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications.please contact us for more information.
PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.
Xiamen Powerway offers GaSb wafer - gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100)
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
