Xiamen Powerway offers GaSb wafer - gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100)
MOQ :
1Xiamen Powerway offers GaSb wafer - gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.It has a lattice constant of about 0.61 nm. GaSb can be used for Infrared detectors,infrared LEDs and lasers and transistors, and thermophotovoltaic systems.
Wafer Specification
Item
Specifications
Wafer Diameter
2"50.5±0.5mm
3"76.2±0.4mm
4"1000.0±0.5mm
Crystal Orientation
(100)±0.1°
Thickness
2"500±25um
3" 625±25um
4"1000±25um
Primary flat length
2"16±2mm
3"22±2mm
4"32.5±2.5mm
Secondary flat length
2"8±1mm
3"11±1mm
4"18±1mm
Surface Finish
P/E, P/P
Package
Epi-Ready,Single wafer container or CF cassette
| Electrical and Doping Specification | |||||
| Conduction Type | p-type | p-type | n-type | n-type | n-type |
| Dopant | Undoped | Zinc | Tellurium | Low tellurium | High tellurium |
| E.D.P cm-2 |
2"≤2000 3"≤5000 |
2"≤2000 3"≤5000 |
2",3"≤1000 4"≤2000 |
2"≤1000 3",4"≤2000 |
2,"3",4"≤500 |
| Mobility cm² V-1s-1 | ≥500 | 450-200 | 3500-2000 | 3500-2000 | 3500-2000 |
| Carrier Concentration cm-3 | ≤2*1017 | ≥1*1018 | （91-900）*1017 | ≤2*1017 |
≥5*1017 |
Remark：
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!
Xiamen Powerway offers InSb wafer - Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Xiamen Powerway offers InP wafer - Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Xiamen Powerway offers InAs wafer - Indium arsenide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Xiamen Powerway offers GaP wafer - gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
We provide custom thin film (silicon carbide) SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect transistors, bipolar junction transistors, thyristors, GTO, and insulated gate bipolar.
Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate,X-ray detectors and Gamma-ray detectors, laser optical modulation, high-performance solar cells and other high-tech fields.
PAM-XIAMEN is able to offer the following SiC reclaim wafer services.
FZ-Silicon The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce 1
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
