Xiamen Powerway offers GaSb wafer - gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100)
MOQ :
1Xiamen Powerway offers GaSb wafer - gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.It has a lattice constant of about 0.61 nm. GaSb can be used for Infrared detectors,infrared LEDs and lasers and transistors, and thermophotovoltaic systems.
Wafer Specification
Item
Specifications
Wafer Diameter
2"50.5±0.5mm
3"76.2±0.4mm
4"1000.0±0.5mm
Crystal Orientation
(100)±0.1°
Thickness
2"500±25um
3" 625±25um
4"1000±25um
Primary flat length
2"16±2mm
3"22±2mm
4"32.5±2.5mm
Secondary flat length
2"8±1mm
3"11±1mm
4"18±1mm
Surface Finish
P/E, P/P
Package
Epi-Ready,Single wafer container or CF cassette
| Electrical and Doping Specification | |||||
| Conduction Type | p-type | p-type | n-type | n-type | n-type |
| Dopant | Undoped | Zinc | Tellurium | Low tellurium | High tellurium |
| E.D.P cm-2 |
2"≤2000 3"≤5000 |
2"≤2000 3"≤5000 |
2",3"≤1000 4"≤2000 |
2"≤1000 3",4"≤2000 |
2,"3",4"≤500 |
| Mobility cm² V-1s-1 | ≥500 | 450-200 | 3500-2000 | 3500-2000 | 3500-2000 |
| Carrier Concentration cm-3 | ≤2*1017 | ≥1*1018 | （91-900）*1017 | ≤2*1017 |
≥5*1017 |
Remark：
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!
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Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
