CZ-Silicon
The heavily/lightly-doped CZ mono-crystalline silicon is suitable for producing various integrated circuits (IC), diodes, triodes, green-energy solar panel. The special elements (such as Ga, Ge) can be added to produce the high-efficiency, radiation-resistant and anti-degenerating solar cell materials for special components.
Cz mono-crystalline silicon
CZ-Silicon
The heavily/lightly-doped CZ mono-crystalline silicon is suitable for producing various integrated circuits (IC), diodes, triodes, green-energy solar panel. The special elements (such as Ga, Ge) can be added to produce the high-efficiency, radiation-resistant and anti-degenerating solar cell materials for special components.
MCZ
The magnetic-field is used in the czochralski process to produce the CZ mono-crystalline silicon with the characteristics of low oxygen content and high resistivity uniformity; the MCZ silicon is suitable to produce the silicon materials for various ICs, discrete devices and low-oxygen solar batteries.
CZ heavily doped crystal
Adopting the special doping device and CZ process, the heavily-doped (P, Sb, As) CZ monocrystalline silicon with very low resistivity can be produced, is mainly used as the lining material for epitaxial wafers, and is used to produce the special electronic devices for LSI switch power supplies, Schottky diodes and field-control high-frequency power electronic devices.
<110> Special orientation CZ-silicon
The <110>monocrystalline silicon has the original orientation <110>, the further processing for orientation adjustment is unnecessary; the <110>monocrystalline silicon has the characteristics of perfect crystal structure, and low oxygen & carbon contents, is a new solar cell material and can be used the new generation cell material.
Our advantages at a glance
1.Advanced epitaxy growth equipment and test equipment.
2.Offer the highest quality with low defect density and good surface roughness.
3.Strong research team support and technology support for our customers
CZ monocrystalline silicon specification
|
Type |
Conduction Type |
Orientation |
Diameter(mm) |
Conductivity(Ω•cm) |
|
CZ |
N&P |
<100><110>&<111> |
76.2-200 |
1-300 |
|
MCZ |
N&P |
<100><110>&<111> |
76.2-200 |
1-300 |
|
Heavy-doping |
N&P |
<100><110>&<111> |
76.2-200 |
0.001-1 |
Wafer specification
|
|
Diameter(mm) |
Thickness(um) |
|
Wafer |
76.2-200 |
≥160 |
FZ-Silicon The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce 1
PAM-XIAMEN Offers Dummy Wafer / Test Wafer / Monitor Wafer
Silicon Epitaxial Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer,but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epit1
FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)
The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, to reduce the costs. There are the low-roughness, low-reflectivity and high-reflectivity etching wafers.
Xiamen Powerway offers GaP wafer - gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology.Thanks to GaN technology,PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon,and AlGaN/GaN on sapphire template.
We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications.please contact us for more information.
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
