PAM-XIAMEN provides CZT based detectors by solid-state detector technology for x-ray or gamma-ray,which has better energy resolution compared with scintillation crystal based detector, including CZT Planar Detector,CZT Pixilated Detector,CZT Co-Planar Gri
CZT Detector
1.1CZT Planar Detector
Specifications
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HV |
+200 V~ +500 V |
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Energy range |
20 KeV ~ 200 KeV |
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Operating temperature range |
-20℃ ~ 40℃ |
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Size（mm 3 ） |
5×5×2 |
10×10×2 |
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Energy resolution @59.5 KeV |
Counter grade |
＞15% |
＞15% |
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Discriminator grade |
7% ~ 15% |
8% ~ 15% |
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Spectrometer grade |
＜7% |
＜8% |
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Note |
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Other sizes can also be available |
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Standard 5×5×2mm 3 CZT assembly
Standard 10×10×2mm 3 CZT assembly
1.2CZT Pixilated Detector
Specifications
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Application |
SPECT、γ Camera |
X-ray imaging |
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Operating temperature range |
-20℃ ~ 40℃ |
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Typical energy resolution |
＜6.5%@59.5 KeV |
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Count rate |
—— |
＞2M cps/pixel |
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Typical matrix |
Area array detector: 8×8 |
Area array detector: 8×8 |
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Linear array detector: 1×16 |
Linear array detector: 1×16 |
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The maximum dimensions of crystal |
40×40×5 mm 3 |
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Note |
Other electrode pattern can also be available |
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Standard 8×8 pixel CZT detector assembly
Standard 8×8 pixel CZT detector assembly
1.3CZT Co-Planar Grid Detectors
Specifications
HV: +1000 V ~ +3000V
Energy range: 50 KeV ~ 3 MeV
Operating temperature range：-20℃ ~ 40℃
Typical energy resolution：＜4%@662 KeV
Peak-to-Compton ratio: 3 ~ 5
Standard size（mm 3 ）: 10×10×5, 10×10×10
1.4CZT Hemispherical Detector
HV: +200 V ~ +1000 V Operating temperature range：-20℃ ~ 40℃
Energy range: 50 KeV ~ 3 MeV Typical energy resolution：＜3%@662 KeV
Standard size（mm 3 ） ：4×4×2, 5×5×2.5, 10×10×5
Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate,X-ray detectors and Gamma-ray detectors, laser optical modulation, high-performance solar cells and other high-tech fields.
Xiamen Powerway offers GaP wafer - gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
PAM-XIAMEN is able to offer the following SiC reclaim wafer services.
PAM-XIAMEN Offers Photomasks A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process1
FZ polished wafers, mainly for the production of silicon rectifier (SR), silicon controlled rectifier (SCR), Giant Transistor (GTR), thyristor (GRO)
Xiamen Powerway offers GaSb wafer - gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100)
PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates, silicon carbide or silicon.PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial1
The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, to reduce the costs. There are the low-roughness, low-reflectivity and high-reflectivity etching wafers.
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
