PAM-XIAMEN provides CZT based detectors by solid-state detector technology for x-ray or gamma-ray,which has better energy resolution compared with scintillation crystal based detector, including CZT Planar Detector,CZT Pixilated Detector,CZT Co-Planar Gri
CZT Detector
1.1CZT Planar Detector
Specifications
|
HV |
+200 V~ +500 V |
||
|
Energy range |
20 KeV ~ 200 KeV |
||
|
Operating temperature range |
-20℃ ~ 40℃ |
||
|
Size（mm 3 ） |
5×5×2 |
10×10×2 |
|
|
Energy resolution @59.5 KeV |
Counter grade |
＞15% |
＞15% |
|
Discriminator grade |
7% ~ 15% |
8% ~ 15% |
|
|
Spectrometer grade |
＜7% |
＜8% |
|
|
Note |
|
Other sizes can also be available |
|
Standard 5×5×2mm 3 CZT assembly
Standard 10×10×2mm 3 CZT assembly
1.2CZT Pixilated Detector
Specifications
|
Application |
SPECT、γ Camera |
X-ray imaging |
|
Operating temperature range |
-20℃ ~ 40℃ |
|
|
Typical energy resolution |
＜6.5%@59.5 KeV |
—— |
|
Count rate |
—— |
＞2M cps/pixel |
|
Typical matrix |
Area array detector: 8×8 |
Area array detector: 8×8 |
|
Linear array detector: 1×16 |
Linear array detector: 1×16 |
|
|
The maximum dimensions of crystal |
40×40×5 mm 3 |
|
|
Note |
Other electrode pattern can also be available |
|
Standard 8×8 pixel CZT detector assembly
Standard 8×8 pixel CZT detector assembly
1.3CZT Co-Planar Grid Detectors
Specifications
HV: +1000 V ~ +3000V
Energy range: 50 KeV ~ 3 MeV
Operating temperature range：-20℃ ~ 40℃
Typical energy resolution：＜4%@662 KeV
Peak-to-Compton ratio: 3 ~ 5
Standard size（mm 3 ）: 10×10×5, 10×10×10
1.4CZT Hemispherical Detector
HV: +200 V ~ +1000 V Operating temperature range：-20℃ ~ 40℃
Energy range: 50 KeV ~ 3 MeV Typical energy resolution：＜3%@662 KeV
Standard size（mm 3 ） ：4×4×2, 5×5×2.5, 10×10×5
Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate,X-ray detectors and Gamma-ray detectors, laser optical modulation, high-performance solar cells and other high-tech fields.
Xiamen Powerway offers GaP wafer - gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
The etching wafer has the characteristics of low roughness, good glossiness and relatively low cost, and directly substitutes the polished wafer or epitaxial wafer which has relatively high cost to produce the electronic elements in some fields, to reduce the costs. There are the low-roughness, low-reflectivity and high-reflectivity etching wafers.
Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate,X-ray detectors and Gamma-ray detectors, laser optical modulation, high-performance solar cells and other high-tech fields.
PAM-XIAMEN Offers photoresist plate with photoresist We can offer Nanolithography (photolithography):Surface preparation, Photoresist apply, Soft bake, Alignment, Exposure, Development,Hard bake, Develop inspect, Etch, Photoresist removal(strip), Final inspection.
PAM-XIAMEN Offers Dummy Wafer / Test Wafer / Monitor Wafer
Xiamen Powerway offers InSb wafer - Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
PAM-XIAMEN's Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates, silicon carbide or silicon.PAM-XIAMEN's Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial1
Contact Information
luna@powerwaywafer.compowerwaymaterial@gmail.com 
+86-592-5601 404
