Products
InP wafer InP wafer

InP wafer

Xiamen Powerway offers InP wafer - Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

  • Product Details

Xiamen Powerway offers InP wafer - Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).


Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zinc blende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide[clarification needed] at 400 °C.,[5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphide. InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.


Wafer Specification
Item Specifications
Wafer Diameter 50.5±0.4mm
Crystal Orientation (100)±0.1°
Thickness 350±25um / 500±25um
Primary flat length 16±2mm
Secondary flat length 8±1mm
Surface Finish P/E, P/P
Package Epi-Ready,Single wafer container or CF cassette 


Electrical and Doping Specification
Conduction Type n-type n-type n-type n-type p-type p-type
Dopant Undoped Iron Tin Sulphur Zinc Low Zinc
E.D.P cm-2 5000 5000 50000 1000 1000 5000
Mobility cm² V-1s-1 4200 1000 2500-750 2000-1000 Not Specified Not Specified
Carrier Concentration cm-3 1016 Semi-Insulating 7-40*1017 1-10*1018 1-6*1018 1-6*101

Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.
Subject : InP wafer

Related Products

InSb substrate

InSb wafer

Xiamen Powerway offers InSb wafer - Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

InAs substrate

InAs wafer

Xiamen Powerway offers InAs wafer - Indium arsenide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

GaP substrate

GaP wafer

Xiamen Powerway offers GaP wafer - gallium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).

GaSb substrate

GaSb wafer

Xiamen Powerway offers GaSb wafer - gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100)

CZT

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate,X-ray detectors and Gamma-ray detectors, laser optical modulation, high-performance solar cells and other high-tech fields.

sic wafer

SIC Application

Due to SiC physical and electronic properties,Silicon Carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices,compared with Si and GaAs based device.

nanolithography

Nanofabrication

PAM-XIAMEN Offers photoresist plate with photoresist We can offer Nanolithography (photolithography):Surface preparation, Photoresist apply, Soft bake, Alignment, Exposure, Development,Hard bake, Develop inspect, Etch, Photoresist removal(strip), Final inspection.

gan on silicon

Freestanding GaN substrate

PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.

Contact Us

If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.
   
If you would like a quotation or more information about our products, please leave us a message, will reply you as soon as possible.