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InGaAs photodetectors

InGaAs photodetectors

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  • InGaAs photodetectors

    Material X Thickness (nm) Dopant Doping concentration InP   1000 N (Sulfur) 3.00E+16 In(x)GaAs 0.53 3000 U/D 5.00E+14 InP   500 N (Sulfur) 3.00E+16 Substrate     SI (Fe)  

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