A graphite capping layer has been evaluated to protect the surface of patterned and selectively implanted 4H–SiC epitaxial wafers during post-implantation annealing. AZ-5214E photoresist was spun and baked in vacuum at temperatures ranging from 750 to 850 °C to form a continuous coating on both planar and mesa-etched SiC surfaces with features up to 2 µm in height. Complete conversion of the hydro...
PAM-XIAMEN grows high quality Gallium Antimonide (GaSb) single crystal ingots. We also round, saw cut, lap and polish GaSb wafers and can supply an epi-ready surface quality. GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect...
Wafer-scale arrays of well-ordered Pb(Zr0.2Ti0.8)O3 nanodiscs and nanorings were fabricated on the entire area (10 mm × 10 mm) of the SrRuO3 bottom electrode on an SrTiO3 single-crystal substrate using the laser interference lithography (LIL) process combined with pulsed laser deposition. The shape and size of the nanostructures were controlled by the amount of PZT deposited through the patterned ...
A micromachined AlGaN/GaN high-electron-mobility transistor (HEMT) on a Si substrate with diamondlike carbon/titanium (DLC/Ti) heat-dissipation layers was investigated. Superior thermal conductivity and thermal expansion coefficient similar to that of GaN enabled DLC/Ti to efficiently dissipate the heat of the GaN power HEMT through the Si substrate via holes. This HEMT with DLC design also mainta...
The recent advances in epitaxial SiC films' growth on Si are overviewed. The basic classical methods currently used for SiC films' growth are discussed and their advantages and disadvantages are explored. The basic idea and the theoretical background for a new method of the synthesis of epitaxial SiC films on Si are given. It will be shown that the new method is significantly different from the cl...
It is still a great challenge for semiconductor based-devices to obtain a large magnetoresistance (MR) effect under a low magnetic field at room temperature. In this paper, the photoinduced MR effects under different intensities of illumination at room temperature are investigated in a semi-insulating gallium arsenide (SI-GaAs)-based Ag/SI–GaAs/Ag device. The device is subjected to the irradiation...
Highly tensile-strained sub-monolayer Ge nanostructures on GaSb have been grown by molecular beam epitaxy and studied by ultrahigh-vacuum scanning tunneling microscopy. Four different coverage rates of Ge nanostructures on GaSb are achieved and investigated. It is found the growth of Ge on GaSb follows 2D growth mode. The crystal lattice of the sub-monolayer Ge nanostructures is coherent with that...
The density and light-scattering intensity of oxygen precipitates in CZ silicon crystals are measured by IR light-scattering tomography. The numerical data clarified through the measurements are discussed in relation to the amount of precipitated oxygen. The results obtained here correspond well with the theoretical analysis that oxygen precipitates cause light to scatter. The information obtained...