Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of Epi service for GaAs-based laser wafers growth and other related products and services announced the new availability of size 3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN's product line. Dr. Shaka, said, "We are pleased to offer Quantum Well Laser Structure to our custome...
We present a novel process for integrating germanium with silicon-on-insulator (SOI) wafers. Germanium is implanted into SOI which is then oxidized, trapping the germanium between the two oxide layers (the grown oxide and the buried oxide). With careful control of the implantation and oxidation conditions this process creates a thin layer (current experiments indicate up to 20-30nm) of almost pure...
Highly tensile-strained sub-monolayer Ge nanostructures on GaSb have been grown by molecular beam epitaxy and studied by ultrahigh-vacuum scanning tunneling microscopy. Four different coverage rates of Ge nanostructures on GaSb are achieved and investigated. It is found the growth of Ge on GaSb follows 2D growth mode. The crystal lattice of the sub-monolayer Ge nanostructures is coherent with that...
Te-doped GaSb single crystals are studied by measuring Hall effect, infrared (IR) transmission and photoluminescence (PL) spectra. It is found that the n-type GaSb with IR transmittance can be obtained as high as 60% by the critical control of the Te-doping concentration and electrical compensation. The concentration of the native acceptor-associated defects is apparently low in the Te-doped GaSb ...
X-ray topographic and chemical etching examination of Si:Ge single crystals containing 1.2 at% and 3.0 at% Ge, together with precise lattice parameter measurements, was performed. Diffraction contrasts in the form of concentric `quasi-circles' (striations), probably due to the non-uniform distribution of Ge atoms, were observed in projection topographs. The etching patterns reveale...
Using plasma enhanced chemical vapor deposition (PECVD) at 13.56 MHz, a seed layer is fabricated at the initial growth stage of the hydrogenated microcrystalline silicon germanium (μc-Si1−xGex:H) i-layer. The effects of seeding processes on the growth of μc-Si1−xGex:H i-layers and the performance of μc-Si1−xGex:H p—i—n single junction solar cells are investigated. By applying this seeding method, ...