The density and light-scattering intensity of oxygen precipitates in CZ silicon crystals are measured by IR light-scattering tomography. The numerical data clarified through the measurements are discussed in relation to the amount of precipitated oxygen. The results obtained here correspond well with the theoretical analysis that oxygen precipitates cause light to scatter. The information obtained...
To realize high-performance silicon carbide (SiC) power devices, low-resistance ohmic contacts to p-type SiC must be developed. To reduce the ohmic contact resistance, reduction of the barrier height at metal/SiC interfaces or increase in the doping concentration in the SiC substrates is needed. Since the reduction of barrier height is extremely difficult, the increase in the Al doping concentrati...
In this paper, using a fully-coupled, three-dimensional electro-thermal device simulator, we study the mechanism of efficiency degradation at high current operation in planar GaN-based light emitting diodes (LED). In particular, the improvement of the efficiency degradation using thicker conductive GaN substrates has been demonstrated. First, it is found that local Joule heating inside thin conduc...
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