Substrates for III-V nitride Film Deposition
Crystal
Structure
M.P.
Density
Lattice Mis-match to GaN
Thermal Expansion
Growth Tech. .& Max size
Standard substrate size (mm)
oC
g/cm3
(10-6/k)
SiC
(6H as example)
Hexagonal
~2700
3.21
3.5 % atori.
10.3
CVD
Ø2" x 0.3,Ø3"x0.3
a=3.073 Å
20x20x0.3,15x15x0.3
c=15.117 Å
Ø3“
10x10x0.3,5x5x0.3
subl.
1 side epi polished
Al2O3
Hexagonal
2030
3.97
14% atori.
7.5
CZ
Ø50 x 0.33
a=4.758 Å
Ø25 x 0.50
c=12.99 Å
Ø2”
10x10x0.5
1 or 2 sides epi polished
LiAlO2
Tetragonal
1900 ~
2.62
1.4 % atori.
/
CZ
10x10x0.5
a=5.17 Å
Ø20 mm
1 or 2 sides epi polished
c=6.26 Å
LiGaO2
Orthor.
1600
4.18
0.2 % atori.
/
CZ
10x10x0.5
a=5.406 Å
Ø20 mm
1 or 2 sides epi polished
b=5.012Å
c=6.379 Å
MgO
Cubic
2852
3.58
3% atori.
12.8
Flux
2”x2”x 0.5 mm,Ø2” x 0.5 mm
a=4.216 Å
1”x1”x 0.5 mm,Ø1” x 0.5 mm
Ø2"
10 x10x0.5 mm
1 or 2 sides epi polished
MgAl2O4
Cubic
2130
3.6
9% atori.
7.45
CZ
Ø2" x 0.5
a=8.083 Å
Ø2“
10x10x0.5
1 or 2 sides epi polished
ZnO
Hexag.
1975
5.605
2.2 % atori.
2.9
Hydro-thermal
20x20x0.5
a=3.325 Å
20mm
1 or 2 sides epi polished
c=5.213 Å
GaN
Hexagonal
6.15
5.59
10x10x0.475mm
5x5x0.475mm